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onsemi 2N6497G

Part No.:
2N6497G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-220-3
Datasheet:
Aetrix2N6497G.pdf
Description:
TRANS NPN 250V 5A TO-220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,074

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Product details

Overview

2N6497G from onsemi is a high-voltage NPN silicon power transistor in TO-220AB package, rated for 250 VCEO, 5 A continuous collector current, and 80 W power dissipation at TC = 25°C; designed for switching power supplies, line-operated amplifiers, and high-voltage inverters.

For engineers reviewing the 2N6497G datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO(sus) ≥ 250 V, hFE = 10–75 at IC = 2.5 A, VCE(sat) ≤ 1.0 V, thermal resistance RJC = 1.56 °C/W, and Pb-free TO-220AB mechanical compatibility.

Technical Context

This device operates as a medium-power, high-voltage NPN bipolar junction transistor with DC current gain optimized for linear and switching applications up to 150°C junction temperature. Its sustaining voltage rating (VCEO(sus) = 250 V) and low saturation voltage support robust operation in flyback and forward converter primary-side switches.

Switching performance is characterized by tr = 0.4–1.0 µs, ts = 1.4–2.5 µs, and tf = 0.45–1.0 µs under VCC = 125 V, IC = 2.5 A conditions; fT = 5.0 MHz confirms usable bandwidth for audio-frequency and SMPS control stages.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 250 Vdc - Withstands 250 V collector-emitter blocking voltage in active cutoff, enabling use in 200 V AC line-derived topologies.
IC (cont) 5.0 Adc - Supports continuous output current up to 5 A at case temperature ≤25°C, suitable for 50–100 W power stages.
PD @ TC=25°C 80 W - Maximum steady-state power dissipation with heatsink; derates linearly at 0.64 W/°C above 25°C.
hFE 10–75 @ IC=2.5 A - Provides predictable base drive requirements across operating range; enables stable bias design in Class AB amplifiers.
VCE(sat) ≤1.0 V @ IC=2.5 A, IB=500 mA - Limits conduction loss to ≤2.5 W per transistor, critical for efficiency in hard-switched converters.
RJC 1.56 °C/W - Junction-to-case thermal resistance defines minimum heatsink requirement for thermal management.
fT 5.0 MHz - Transition frequency supports reliable switching up to ~500 kHz with adequate gain margin in driver circuits.

Pinout & Package

2N6497G uses the standard TO-220AB package (Case 221A, Style 1), with metal tab electrically connected to collector. Mounting hole allows mechanical attachment and thermal interface to heatsink.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) Emitting terminal of NPN structure Low-impedance return path for collector current; referenced to ground or negative rail in common-emitter configurations.
2 (Base) Control electrode for carrier injection Requires 500 mA peak base drive for full saturation at 2.5 A collector current; sensitive to ESD and overvoltage.
3 (Collector) High-voltage current collection node Internally connected to metal tab; must be isolated from heatsink unless circuit design intentionally ties collector to chassis ground.

Key Features

Feature Design Value
High VCEO(sus) 250 V minimum sustaining voltage ensures reliable operation in 230 VAC-input SMPS without snubber overdesign.
Pb-Free TO-220AB RoHS-compliant lead-free finish meets global environmental regulations without compromising thermal or mechanical performance.
Low VCE(sat) 1.0 V max at 2.5 A reduces conduction losses by >30% vs. legacy 1.5 V devices, improving system efficiency in high-duty-cycle operation.
Wide hFE range 10–75 enables consistent biasing across production lots and temperature extremes, simplifying driver stage design.
Robust SOA Second-breakdown-limited safe operating area supports pulsed loads up to 100 V × 3 A with 10% duty cycle at 25°C case temperature.

Applications

Switching Power Supply Line-Operated Audio Amplifier

Use Scenario: Primary-side switch in 60–100 W offline flyback converter with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage NPN power switch driven by PWM controller; handles repetitive 250 V blocking and 5 A peak current pulses.

Use Value: 250 V VCEO and 1.0 V VCE(sat) reduce snubber losses and improve efficiency over 88% at full load.

Use Scenario: Output stage in 50 W Class AB audio amplifier powered directly from rectified 230 VAC mains.

IC Role / Device Role / Timing Role: Linear power transistor delivering clean analog output; biased in active region with fixed emitter degeneration.

Use Value: Stable hFE (10–75) and low VBE(sat) (1.5–2.5 V) enable precise quiescent current setting and low THD.

High-Voltage Inverter DC Motor Drive (Industrial)

Use Scenario: Half-bridge leg in 200 VDC bus inverter driving induction heating coil or small PMSM.

IC Role / Device Role / Timing Role: Switching element handling 200 V DC link voltage and 4–5 A motor phase current at 20 kHz PWM.

Use Value: 5.0 MHz fT and sub-1 µs rise/fall times ensure minimal switching loss and reduced EMI generation.

Use Scenario: H-bridge upper/lower switch in 48 V industrial DC motor controller delivering up to 5 A continuous torque current.

IC Role / Device Role / Timing Role: Medium-power switching transistor controlled via optocoupled gate driver; operates with forced-air cooling.

Use Value: RJC = 1.56 °C/W enables thermal design with compact heatsink, supporting ambient temperatures up to 70°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD127G Lower VCEO = 100 V, higher hFE = 25–250, TO-252 surface-mount package Not suitable for 230 VAC-derived topologies; limited to ≤100 V DC bus applications Select only when board space constraints require SMT and voltage stress remains below 80 V.
2N6284 Higher VCEO = 400 V, same TO-220AB package, but lower hFE = 5–30 at IC = 2.5 A Supports wider input voltage range but requires larger base drive current for saturation Choose when 400 V blocking is mandatory and driver stage can supply ≥1 A peak base current.

Compared with 2N6497G, MJD127G trades voltage capability for footprint and gain, while 2N6284 extends blocking voltage at the cost of base drive efficiency-making 2N6497G optimal for 200–250 V applications requiring balanced gain, loss, and thermal performance.

Availability

2N6497G is available at Aetrix Electronics and suitable for switching power supplies, line-operated amplifiers, and high-voltage inverters requiring stable component supply, RoHS compliance, and TO-220AB mechanical interchangeability.

Supply support for 2N6497G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6497G belongs to onsemi's legacy high-voltage bipolar power transistor family, engineered for reliability in mains-connected power conversion and linear amplification where ruggedness and parameter consistency are critical.

FAQ

What is the maximum continuous collector current rating for the 2N6497G?

The 2N6497G is rated for 5.0 Adc continuous collector current at case temperature TC = 25°C. This rating decreases with rising case temperature, derating at 0.64 W/°C for power dissipation and correspondingly reducing allowable current per thermal limits shown in Figure 6 of the official datasheet. At TC = 100°C, the practical IC limit drops to approximately 2.5 A for safe operation.

Is the 2N6497G pin-compatible with other TO-220AB NPN transistors like the 2N3055?

No-the 2N6497G has emitter-base-collector pinout (E-B-C) in TO-220AB, whereas the 2N3055 uses collector-base-emitter (C-B-E). Swapping them without verifying pin assignment risks immediate device failure due to reversed polarity. Always confirm pinout using the marking diagram and Figure 1 in the 2N6497G datasheet before PCB layout or replacement.

Does the 2N6497G have built-in protection features such as thermal shutdown or overcurrent limiting?

No-the 2N6497G is a discrete bipolar power transistor with no integrated protection circuitry. It relies entirely on external design elements: base current limiting, heatsinking, SOA-aware gate/base drive, and external fast-acting fusing or current-sense feedback. Safe operation requires adherence to the SOA curves in Figure 4 and thermal response data in Figure 3 of the 2N6497G datasheet.

Can the 2N6497G be used in linear amplifier applications?

Yes-the 2N6497G is explicitly characterized for line-operated amplifier applications in its official documentation. Its specified hFE stability across temperature, low VCE(sat), and wide SOA make it suitable for Class AB output stages. However, proper heatsinking and bias network design are essential to maintain junction temperature below 150°C during sustained high-power output.

What does the 'G' suffix in 2N6497G indicate?

The 'G' suffix in 2N6497G denotes a Pb-free (lead-free) finish on the TO-220AB package, compliant with RoHS Directive 2011/65/EU. This replaces traditional tin-lead plating while maintaining identical electrical, thermal, and mechanical specifications-including RJC = 1.56 °C/W and mounting dimensions-as the legacy 2N6497 part.

2N6497G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
5 A
Voltage - Collector Emitter Breakdown (Max):
250 V
Vce Saturation (Max) @ Ib, Ic:
5V @ 2A, 5A
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 2.5A, 10V
Power - Max:
80 W
Frequency - Transition:
5MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

2N6497G FAQ

1.How can I place an order for 2N6497G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6497G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6497G reliable?

The price and inventory of 2N6497G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6497G is usually 5 days.

3.What payment methods are accepted for 2N6497G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6497G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6497G?

2N6497G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6497G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6497G?

For technical support, including 2N6497G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6497G requirements.

6.How does Aetrix verify that 2N6497G is sourced from the original manufacturer or authorized distributors?

All 2N6497G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6497G meets industry standards.

7.What is the process for return or replacement of 2N6497G?

All 2N6497G units undergo pre-shipment inspection (PSI). If there is an issue with 2N6497G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6497G part is unused and in its original packaging.

Return procedure for 2N6497G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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