onsemi 2N6517
- Part No.:
- 2N6517
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 Long Body
- Datasheet:
-
2N6517.pdf
- Description:
- TRANS NPN 350V 0.5A TO92
- Quantity:
- Payment:

- Shipping:

Inventory:2,670
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Product details
Overview
2N6517 from onsemi is an NPN high-voltage general-purpose transistor in TO-92 package, rated for 350 VCEO, 500 mA continuous collector current, and 1.5 W total device dissipation at TC = 25°C. It delivers hFE ≥ 20 at IC = 10 mA, VCE = 10 V, and supports switching applications up to 200 MHz fT, such as horizontal deflection circuits in CRT displays.
For engineers reviewing the 2N6517 datasheet, pinout, applications, or equivalent options, key selection criteria include its 350 V breakdown rating, TO-92 thermal resistance (RJC = 83.3 °C/W), saturation voltage ≤ 0.50 V at IC/IB = 10, and verified switching performance with ton ≤ 200 ns and toff ≤ 3.5 µs under defined test conditions.
Technical Context
The 2N6517 operates as a single-element NPN bipolar junction transistor optimized for high-voltage linear amplification and fast switching. Its design emphasizes robust VCEO and VCBO ratings (both 350 V), low leakage (ICBO ≤ 50 nA at VCB = 250 V), and stable hFE across temperature (−55°C to +150°C).
It uses standard silicon planar epitaxial construction with base-emitter and collector-base junctions engineered for high reverse breakdown tolerance. The device exhibits Ccb = 6.0 pF and Ceb = 80 pF at specified bias conditions, supporting RF-capable switching up to 200 MHz fT while maintaining low capacitance-driven delay.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 350 Vdc - Enables use in high-voltage power supply regulation and CRT horizontal output stages without derating. |
| IC (continuous) | 500 mAdc - Supports moderate-power switching loads such as relay drivers and small solenoid controls. |
| PD @ TC = 25°C | 1.5 W - Allows direct heatsinking to PCB copper or small metal clips for sustained operation above ambient limits. |
| hFE @ IC = 10 mA | ≥20 - Ensures reliable base drive margin in saturated switch configurations with typical IB/IC = 1/10. |
| fT | 40–200 MHz - Confirmed usable bandwidth for video pulse amplification and medium-frequency switching (e.g., 100 kHz SMPS gate driving). |
| toff | ≤3.5 µs - Measured under VCC = 100 V, IC = 50 mA, IB1 = IB2 = 10 mA - Validates fast turn-off in high-voltage snubberless designs. |
| RJC | 83.3 °C/W - Enables thermal management via case-to-heatsink interface, critical for reliability in sealed enclosures. |
Pinout & Package
2N6517 is housed in TO-92 package (Case 29-11, Style 1), with standardized lead configuration and mechanical dimensions per onsemi specification. The package supports through-hole mounting and provides adequate thermal conduction for 1.5 W dissipation when properly heatsunk.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Reference terminal for base-emitter junction; connects to ground or low-side return path in common-emitter configurations. |
| 2 | Base | Control input; requires current-limited drive (IB ≤ 250 mAdc) to achieve full saturation without overdrive stress. |
| 3 | Collector | High-voltage output node; rated for 350 V standoff and capable of sinking up to 500 mA with safe operating area validated to 100 V/50 mA pulses. |
Key Features
| Feature | Design Value |
|---|---|
| High VCEO rating | 350 V - Eliminates need for external voltage clamping in flyback transformer primary switching and HV DC-DC converters. |
| Low Ccb capacitance | 6.0 pF - Reduces Miller effect during high-dV/dt switching, improving stability in inductive load interfaces. |
| Guaranteed hFE minimum | 20 at IC = 10 mA - Ensures predictable base resistor sizing for consistent saturation across production lots and temperature. |
| Fast ton/toff | ≤200 ns / ≤3.5 µs - Meets timing requirements for 100 kHz–500 kHz switching frequencies in compact power supplies. |
| Pb-free option available | RLRA/RLRP variants - Complies with RoHS Directive 2011/65/EU without compromising thermal or electrical performance. |
Applications
| Horizontal Deflection Output | High-Voltage Power Supply Switch |
|---|---|
|
Use Scenario: Driving flyback transformer primary in CRT monitor horizontal output stage with 100–150 V supply and 15.734 kHz waveform. IC Role / Device Role / Timing Role: NPN switch operating in hard-saturation mode, turning on/off collector current synchronized to line scan timing. Use Value: 350 V VCEO withstands retrace-induced voltage spikes; 3.5 µs toff ensures clean flyback reset without secondary ringing. |
Use Scenario: Regulating unregulated DC bus in industrial AC-DC converter using emitter-follower pass configuration. IC Role / Device Role / Timing Role: Linear pass transistor controlling output voltage via base bias adjustment from error amplifier. Use Value: 1.5 W PD at TC = 25°C enables 2.5 W dissipation with minimal heatsink; hFE ≥20 ensures stable loop gain. |
| Relay/Solenoid Driver | Video Pulse Amplifier |
|
Use Scenario: Controlling 24 V/500 mA DC relay coil in PLC I/O module with microcontroller GPIO interface. IC Role / Device Role / Timing Role: Low-side switch providing galvanic isolation between logic and inductive load. Use Value: 500 mA IC rating matches typical relay hold current; VCE(sat) ≤ 0.50 V minimizes power loss and self-heating. |
Use Scenario: Amplifying composite sync pulses in analog video distribution equipment with 1–5 MHz bandwidth requirement. IC Role / Device Role / Timing Role: Common-emitter broadband amplifier biased for Class-A operation with fixed VCE = 10 V. Use Value: 200 MHz fT supports flat gain response up to 5 MHz; Ceb = 80 pF allows predictable input impedance matching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2N6515 | Lower VCEO/VCBO (250 V), same TO-92 package and pinout, hFE ≥35 at IC = 1 mA. | Not suitable for >250 V circuits; better for low-current amplification where higher hFE improves bias stability. | Select 2N6515 only if system maximum VCE remains below 230 V and gain consistency at low IC is prioritized. |
| MPSA42 | Same 300 V VCEO, but lower IC (500 mA vs. 300 mA), higher hFE (50 min), TO-92 package. | Limited to lower-power switching; superior for signal-level HV amplification (e.g., photomultiplier anode stages). | Choose MPSA42 when circuit demands higher gain at <100 mA and absolute max VCE ≤ 300 V; avoid for 350 V designs. |
Compared with 2N6515 and MPSA42, the 2N6517 uniquely balances 350 V capability, 500 mA current handling, and verified 3.5 µs turn-off in TO-92-making it the only option among the three qualified for 300–350 V flyback or snubberless switching without layout change.
Availability
2N6517 is available at Aetrix Electronics and suitable for horizontal deflection circuits, high-voltage power supply switches, and relay/solenoid drivers requiring stable component supply across extended production lifecycles.
Supply support for 2N6517 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 2N6517 belongs to onsemi's legacy high-voltage bipolar transistor family, designed specifically for cost-sensitive, reliability-critical applications in CRT-based displays, industrial power conversion, and electromechanical control systems.
FAQ
What is the maximum collector-emitter voltage rating for the 2N6517?
The 2N6517 has a guaranteed minimum collector-emitter breakdown voltage V(BR)CEO of 350 Vdc at IC = 1.0 mAdc and IB = 0. This rating is validated per onsemi's 2N6515/D datasheet Rev. 4 and applies under steady-state DC conditions with proper heatsinking. Exceeding this voltage risks irreversible junction failure.
Does the 2N6517 have a Pb-free packaging option?
Yes, the 2N6517RLRA and 2N6517RLRP variants are Pb-free and RoHS-compliant, as confirmed in the onsemi ordering information table. These versions use the same TO-92 package and electrical specifications as the standard 2N6517, with no performance trade-offs in thermal or switching behavior.
What is the thermal resistance from junction to case for the 2N6517?
The 2N6517 has a thermal resistance RJC of 83.3 °C/W, measured from junction to case at TC = 25°C. This value enables accurate junction temperature estimation when mounted to a heatsink or thermally conductive PCB pad, supporting reliability analysis for continuous 1.5 W operation.
Can the 2N6517 be used as a direct replacement for the 2N6515 in existing designs?
No-the 2N6517 is not a drop-in replacement for the 2N6515 due to its higher 350 V VCEO rating and lower hFE (20 vs. 35 at IC = 1 mA). While pin-compatible and same-package, substituting 2N6517 into a 2N6515 design may cause insufficient gain in low-current linear applications unless base bias is recalculated.
What is the typical current-gain bandwidth product (fT) of the 2N6517?
The 2N6517 has an fT range of 40–200 MHz, specified at IC = 10 mAdc, VCE = 20 Vdc, and f = 20 MHz. This bandwidth supports medium-frequency switching and analog amplification tasks, including video pulse shaping and 100–500 kHz SMPS gate driving, as validated in Figure 4 of the official datasheet.
2N6517 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 350 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 50mA, 10V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 200MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92 (TO-226)
2N6517 FAQ
1.How can I place an order for 2N6517 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N6517 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N6517 reliable?
The price and inventory of 2N6517 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6517 is usually 5 days.
3.What payment methods are accepted for 2N6517?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6517 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N6517?
2N6517 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N6517 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N6517?
For technical support, including 2N6517 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6517 requirements.
6.How does Aetrix verify that 2N6517 is sourced from the original manufacturer or authorized distributors?
All 2N6517 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6517 meets industry standards.
7.What is the process for return or replacement of 2N6517?
All 2N6517 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6517, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N6517 part is unused and in its original packaging.
Return procedure for 2N6517:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N6517 Tags

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Micro Commercial Co

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Diodes Incorporated

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Nexperia USA Inc.

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