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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N6517BU

Name: 2N6517BU
Brand: onsemi
SKU: 2N6517BU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6517BU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2N6517BU.pdf

Description:: TRANS NPN 350V 0.5A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N6517BU from onsemi is an NPN high-voltage bipolar junction transistor designed for switching and linear amplification in off-line power supplies, relay drivers, and HV pulse generators. It features V_CEO = 350 V, I_C = 500 mA, P_D = 1.5 W at T_C = 25°C, f_T = 40–200 MHz, and TO-92 package with emitter-base breakdown of 6.0 V.

For engineers reviewing the 2N6517BU datasheet, pinout, applications, or equivalent options, key selection criteria include high-voltage blocking capability (350 V), low saturation voltage (V_CE(sat) ≤ 1.0 V at I_C = 50 mA), thermal resistance (R_JC = 83.3 °C/W), and compatibility with discrete HV switch designs requiring Pb-free TO-92 packaging.

Technical Context

The 2N6517BU operates as a general-purpose NPN BJT optimized for high-voltage switching up to 350 V with controlled gain-bandwidth trade-offs: f_T ranges from 40 MHz (low-current) to 200 MHz (mid-current), supporting both fast-switching and moderate-frequency linear operation. Its safe operating area (SOA) is defined up to second-breakdown limits under pulsed conditions, with thermal design anchored by R_JC = 83.3 °C/W.

DC current gain (h_FE) varies from 20–300 depending on collector current (1–100 mA) and junction temperature (−55°C to +150°C), enabling stable biasing across industrial ambient ranges. Saturation characteristics are specified at multiple I_C/I_B ratios (e.g., V_CE(sat) = 0.35 V at I_C = 20 mA/I_B = 2 mA), supporting predictable drive requirements in discrete switch topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	350 Vdc - supports direct connection to 277 VAC line-derived rails without external snubbing
I_C (continuous)	500 mAdc - enables driving medium-power loads such as solenoids or small relays
P_D @ T_C = 25°C	1.5 W - allows high-power dissipation when mounted on heatsinked PCB copper or chassis
f_T	40–200 MHz - supports switching frequencies up to ~10 MHz with adequate gain margin
V_CE(sat)	≤1.0 V at I_C = 50 mA/I_B = 5 mA - minimizes conduction loss in saturated switch mode
R_JC	83.3 °C/W - enables thermal management via case-to-heatsink interface without forced air
h_FE	20–300 - provides wide bias flexibility for fixed-gain or feedback-stabilized amplifier stages

Pinout & Package

2N6517BU is housed in a Pb-free TO-92 (Case 29-11, Style 17) plastic package with straight or bent leads. The package outline conforms to ANSI Y14.5M and has maximum dimensions of 5.20 × 5.33 × 4.19 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1	Collector	Main current sink terminal; connected to high-side load or HV rail in common-emitter switch
2	Base	Control input requiring ~5 mA drive for full saturation at 50 mA collector current
3	Emitter	Current return path; tied to ground or low-side reference in standard configurations

Key Features

Feature	Design Value
High V_CEO rating	350 V enables use in 277 VAC auxiliary supplies and flyback primary-side switches without derating
Low V_CE(sat)	0.35 V typical at I_C/I_B = 10 ensures <175 mW conduction loss at 500 mA, improving efficiency
Pb-free TO-92 package	RoHS-compliant construction with industry-standard footprint and hand-soldering compatibility
Wide operating temperature	−55°C to +150°C junction range supports deployment in automotive engine compartments and industrial enclosures
Controlled SOA	Second-breakdown-limited safe operating area validated per Figure 18 for pulsed HV applications

Applications

Industrial Relay Driver	Off-Line SMPS Startup Circuit
Use Scenario: Driving 24 VDC/1 A electromagnetic relays from microcontroller GPIO in programmable logic controllers. IC Role / Device Role / Timing Role: Discrete NPN switch providing galvanic isolation and current gain between low-voltage logic and inductive load. Use Value: 350 V V_CEO withstands relay coil flyback spikes up to 300 V, eliminating need for external clamping diodes in many cases.	Use Scenario: Providing initial gate drive to main power MOSFET during AC/DC converter startup before auxiliary winding becomes active. IC Role / Device Role / Timing Role: High-voltage BJT acting as temporary current source to charge bootstrap capacitor until self-powered operation begins. Use Value: 1.5 W power dissipation capability sustains 100–200 ms startup pulses without thermal shutdown or degradation.
Pulse Generator for HV Sensors	Linear HV Amplifier Stage
Use Scenario: Generating calibrated 100–300 V, 100 ns–1 µs pulses for time-of-flight ultrasonic transducers or photomultiplier tube gating. IC Role / Device Role / Timing Role: Fast-switching NPN transistor configured in grounded-emitter topology with base drive shaping. Use Value: f_T ≥ 40 MHz and t_on/t_off ≤ 200 ns / 3.5 µs enable sub-microsecond edge control in open-loop pulse circuits.	Use Scenario: Building a 300 V output, 10 mA linear regulator stage for analog sensor biasing in high-isolation test equipment. IC Role / Device Role / Timing Role: Pass element in series-regulator configuration with external op-amp error amplifier and current-limit resistor. Use Value: h_FE stability over −55°C to +150°C ensures consistent loop gain and load regulation across environmental extremes.

Industrial Relay Driver

Off-Line SMPS Startup Circuit

Use Scenario: Driving 24 VDC/1 A electromagnetic relays from microcontroller GPIO in programmable logic controllers.

IC Role / Device Role / Timing Role: Discrete NPN switch providing galvanic isolation and current gain between low-voltage logic and inductive load.

Use Value: 350 V V_CEO withstands relay coil flyback spikes up to 300 V, eliminating need for external clamping diodes in many cases.

Use Scenario: Providing initial gate drive to main power MOSFET during AC/DC converter startup before auxiliary winding becomes active.

IC Role / Device Role / Timing Role: High-voltage BJT acting as temporary current source to charge bootstrap capacitor until self-powered operation begins.

Use Value: 1.5 W power dissipation capability sustains 100–200 ms startup pulses without thermal shutdown or degradation.

Pulse Generator for HV Sensors

Linear HV Amplifier Stage

Use Scenario: Generating calibrated 100–300 V, 100 ns–1 µs pulses for time-of-flight ultrasonic transducers or photomultiplier tube gating.

IC Role / Device Role / Timing Role: Fast-switching NPN transistor configured in grounded-emitter topology with base drive shaping.

Use Value: f_T ≥ 40 MHz and t_on/t_off ≤ 200 ns / 3.5 µs enable sub-microsecond edge control in open-loop pulse circuits.

Use Scenario: Building a 300 V output, 10 mA linear regulator stage for analog sensor biasing in high-isolation test equipment.

IC Role / Device Role / Timing Role: Pass element in series-regulator configuration with external op-amp error amplifier and current-limit resistor.

Use Value: h_FE stability over −55°C to +150°C ensures consistent loop gain and load regulation across environmental extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA42	V_CEO = 300 V (50 V lower); h_FE min = 40 at I_C = 10 mA; TO-92 package	Suitable for ≤250 VAC-derived supplies; less margin for transient overvoltage	Select when 300 V rating suffices and higher minimum h_FE improves bias stability
BC639	V_CEO = 80 V (270 V lower); P_D = 0.83 W; f_T = 100 MHz; same TO-92 footprint	Limited to low-voltage DC-DC converters and signal amplification, not HV switching	Choose only for cost-sensitive, non-HV applications where 350 V capability is unnecessary

Compared with 2N6517BU, MPSA42 offers tighter h_FE distribution but reduced voltage headroom, while BC639 trades all HV capability for lower cost and higher f_T-neither is pin-compatible, and both require layout revision if substituting into existing 350 V designs.

Availability

2N6517BU is available at Aetrix Electronics and suitable for industrial relay drivers, off-line SMPS startup circuits, HV pulse generators, and linear HV amplifier stages requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for 2N6517BU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2N6517BU belongs to onsemi's legacy high-voltage BJT product line, engineered for reliability in ruggedized discrete switch and amplifier roles where integrated alternatives lack sufficient voltage or thermal robustness.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6517BU?

The 2N6517BU has a guaranteed minimum V_CEO rating of 350 Vdc under specified test conditions (I_C = 1.0 mAdc, I_B = 0). This rating applies at T_A = 25°C and defines the absolute upper limit for continuous DC voltage between collector and emitter with base open. Exceeding this value risks avalanche breakdown and permanent device damage.

Does the 2N6517BU have a Pb-free package?

Yes, the 2N6517BU is manufactured in a Pb-free TO-92 package compliant with RoHS Directive 2011/65/EU. The "BU" suffix explicitly denotes the Pb-free variant per onsemi's ordering nomenclature, and the device meets JEDEC J-STD-609A Class 3 moisture sensitivity level (MSL-3) requirements for surface-mount assembly.

What is the thermal resistance from junction to case for the 2N6517BU?

The 2N6517BU has a specified thermal resistance of R_JC = 83.3 °C/W when mounted with proper mechanical contact to a heatsink or thermally conductive PCB copper pour. This value is measured under steady-state conditions at T_C = 25°C and is critical for calculating maximum allowable power dissipation based on case temperature constraints.

Can the 2N6517BU be used in linear amplifier applications?

Yes, the 2N6517BU supports linear operation within its Safe Operating Area (SOA), as documented in Figure 18 of the datasheet. Its h_FE stability across temperature (−55°C to +150°C) and low V_CE(sat) make it suitable for Class-A or Class-AB HV amplifier stages, provided power dissipation remains within the 1.5 W limit at T_C = 25°C and derated above that temperature.

What are the pin assignments for the 2N6517BU in TO-92 package?

Per onsemi's Case 29-11 Style 17 mechanical drawing, the 2N6517BU TO-92 pinout is: Pin 1 = Collector, Pin 2 = Base, Pin 3 = Emitter. This configuration is verified in the "MARKING DIAGRAM" section and confirmed in the "MECHANICAL CASE OUTLINE" table on page 2 of the datasheet.

2N6517BU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 350 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20 @ 50mA, 10V

Power - Max:: 625 mW

Frequency - Transition:: 200MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N6517BU FAQ

1.How can I place an order for 2N6517BU through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6517BU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6517BU reliable?

The price and inventory of 2N6517BU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6517BU is usually 5 days.

3.What payment methods are accepted for 2N6517BU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6517BU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6517BU?

2N6517BU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6517BU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6517BU?

For technical support, including 2N6517BU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6517BU requirements.

6.How does Aetrix verify that 2N6517BU is sourced from the original manufacturer or authorized distributors?

All 2N6517BU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6517BU meets industry standards.

7.What is the process for return or replacement of 2N6517BU?

All 2N6517BU units undergo pre-shipment inspection (PSI). If there is an issue with 2N6517BU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6517BU part is unused and in its original packaging.

Return procedure for 2N6517BU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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