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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N6517CBU

Name: 2N6517CBU
Brand: onsemi
SKU: 2N6517CBU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6517CBU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2N6517CBU.pdf

Description:: TRANS NPN 400V 0.5A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N6517CBU from onsemi is an NPN high-voltage bipolar junction transistor designed for switching and linear amplification in off-line power supplies, relay drivers, and HV pulse generators. It features V_CEO = 350 V, I_C = 500 mA, P_D = 1.5 W at T_C = 25°C, and f_T = 40–200 MHz, operating across −55°C to +150°C junction temperature range.

For engineers reviewing the 2N6517CBU datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, TO-92 package layout, real-world use cases in HV switching circuits, and two validated alternative transistors with documented parameter differences.

Technical Context

The 2N6517CBU is a silicon planar epitaxial NPN transistor optimized for high-voltage switching with low saturation voltage and controlled gain-bandwidth trade-off. Its h_FE ranges from 20 to 200 (depending on I_C), and it supports fast turn-on (t_on ≤ 200 ns) and turn-off (t_off ≤ 3.5 µs) under 100 V _CC, 50 mA I_C, and matched base drive conditions.

Thermal design is enabled by R_JC = 83.3°C/W and R_JA = 200°C/W, allowing operation up to 150°C junction temperature when mounted on heatsinked PCBs or chassis. The device complies with Pb-free requirements per J-STD-609 and uses TO-92 Case 29 Style 1 pinout (Emitter–Base–Collector).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	350 Vdc - Supports direct connection to 277 VAC line-derived rails without external snubbing in flyback or forward converters.
I_C (cont.)	500 mAdc - Sufficient for driving relays, small solenoids, or gate resistors of downstream MOSFETs in auxiliary power stages.
P_D @ T_C=25°C	1.5 W - Enables continuous dissipation in compact TO-92 packages when heatsinked to copper pour or chassis.
f_T	40–200 MHz - Permits stable operation as oscillator or RF driver up to ~30 MHz with proper biasing and layout.
V_CE(sat)	0.30–1.0 Vdc @ I_C/I_B = 10–50 mA - Minimizes conduction loss in saturated-switch applications like LED strobes or HV logic level shifting.
C_cb	6.0 pF max @ V_CB = 20 V - Limits Miller effect in high-speed switching, supporting clean edge integrity in pulse generators.
h_FE	20–200 @ I_C = 1–100 mA - Provides predictable current gain across wide load range, easing base drive design in discrete amplifier stages.

Pinout & Package

2N6517CBU is housed in a Pb-free TO-92 (Case 29, Style 1) plastic package with bent leads, rated for operation from −55°C to +150°C. Dimensions conform to ANSI Y14.5M-1982, with body height 4.45–5.20 mm, lead pitch 2.54 mm, and thermal resistance R_JC = 83.3°C/W.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal for NPN operation	Connected to ground or low-side return path; must handle full collector current during saturation.
2 (Base)	Control input for minority-carrier injection	Requires current-limited drive (≤250 mA) to avoid second breakdown; typical I_B = 1–10 mA for 10–50 mA I_C.
3 (Collector)	High-voltage output terminal	Rated for 350 V standoff; connected to HV rail or inductive load; requires flyback diode in inductive switching.

Key Features

Feature	Design Value
High V_CEO rating	350 V enables direct interface with 277 VAC mains-derived DC bus without intermediate regulation.
Low V_CE(sat)	0.30 V at I_C = 10 mA / I_B = 1 mA reduces power loss and self-heating in high-duty-cycle switches.
Wide f_T range	40–200 MHz allows use in both audio-frequency amplifiers and HF pulse shaping circuits up to 30 MHz.
Pb-free TO-92 packaging	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A; compatible with standard wave/solder-reflow profiles.
Robust thermal performance	R_JC = 83.3°C/W supports >1 W dissipation with minimal heatsinking-critical for space-constrained industrial controls.

Applications

Off-Line AC-DC Power Supply	Industrial Relay Driver
Use Scenario: Used as primary-side switch in low-power flyback converters feeding control logic or isolated sensors. IC Role / Device Role / Timing Role: NPN switching transistor operating in hard-saturation mode with 50% duty cycle and 65 kHz switching frequency. Use Value: 350 V V_CEO eliminates need for external voltage clamping; 0.35 V V_CE(sat) keeps conduction loss below 18 mW at 50 mA I_C.	Use Scenario: Drives 24 VDC coil of industrial PLC output relay handling 5 A loads. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current with TTL-compatible base drive. Use Value: 500 mA I_C rating exceeds relay hold current (typically 20–40 mA); 1.5 W P_D prevents thermal runaway during extended ON states.
High-Voltage Pulse Generator	Linear HV Amplifier Stage
Use Scenario: Generates 300 V, 100 ns pulses for time-of-flight sensor excitation or piezo actuator drive. IC Role / Device Role / Timing Role: Fast-switching NPN in common-emitter configuration with active base pull-down. Use Value: t_off ≤ 3.5 µs and C_cb = 6 pF ensure clean pulse edges and minimal overshoot into 50 Ω loads.	Use Scenario: Amplifies ±10 V analog signals to ±200 V for electrostatic lens control in lab instrumentation. IC Role / Device Role / Timing Role: Linear-mode emitter-follower configured for high-voltage swing with local feedback. Use Value: h_FE ≥ 30 at I_C = 30 mA ensures stable bias; 150°C T_J(max) accommodates sustained 1 W dissipation in sealed enclosures.

Off-Line AC-DC Power Supply

Industrial Relay Driver

Use Scenario: Used as primary-side switch in low-power flyback converters feeding control logic or isolated sensors.

IC Role / Device Role / Timing Role: NPN switching transistor operating in hard-saturation mode with 50% duty cycle and 65 kHz switching frequency.

Use Value: 350 V V_CEO eliminates need for external voltage clamping; 0.35 V V_CE(sat) keeps conduction loss below 18 mW at 50 mA I_C.

Use Scenario: Drives 24 VDC coil of industrial PLC output relay handling 5 A loads.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current with TTL-compatible base drive.

Use Value: 500 mA I_C rating exceeds relay hold current (typically 20–40 mA); 1.5 W P_D prevents thermal runaway during extended ON states.

High-Voltage Pulse Generator

Linear HV Amplifier Stage

Use Scenario: Generates 300 V, 100 ns pulses for time-of-flight sensor excitation or piezo actuator drive.

IC Role / Device Role / Timing Role: Fast-switching NPN in common-emitter configuration with active base pull-down.

Use Value: t_off ≤ 3.5 µs and C_cb = 6 pF ensure clean pulse edges and minimal overshoot into 50 Ω loads.

Use Scenario: Amplifies ±10 V analog signals to ±200 V for electrostatic lens control in lab instrumentation.

IC Role / Device Role / Timing Role: Linear-mode emitter-follower configured for high-voltage swing with local feedback.

Use Value: h_FE ≥ 30 at I_C = 30 mA ensures stable bias; 150°C T_J(max) accommodates sustained 1 W dissipation in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA42	V_CEO = 300 V (50 V lower); h_FE min = 40 @ I_C = 10 mA; TO-92 package, same pinout.	Suitable for ≤250 VDC systems; less margin for transient overvoltage in 277 VAC-derived rails.	Select when cost sensitivity outweighs 50 V safety margin and system transients are well-clamped.
BC639	V_CEO = 80 V (270 V lower); I_C = 1 A; f_T = 100 MHz; TO-92, but pinout differs (E-C-B vs E-B-C).	Limited to low-voltage switching (e.g., 24 V industrial logic); incompatible pinout requires PCB redesign.	Choose only for non-HV applications where higher I_C and gain consistency are prioritized over voltage rating.

Compared with MPSA42 and BC639, the 2N6517CBU provides the highest V_CEO among TO-92 NPN transistors, enabling direct use in 277 VAC auxiliary supplies without derating, while maintaining compatibility with legacy base-drive networks designed for E-B-C pinout.

Availability

2N6517CBU is available at Aetrix Electronics and suitable for off-line power supplies, industrial relay drivers, high-voltage pulse generators, and linear HV amplifier stages requiring stable component supply across extended temperature and voltage ranges.

Supply support for 2N6517CBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6517CBU belongs to onsemi's legacy high-voltage discrete transistor family, engineered for reliability in mains-connected equipment, industrial controls, and instrumentation where robustness against voltage transients and thermal stress is critical.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6517CBU?

The 2N6517CBU has a guaranteed minimum V_CEO rating of 350 Vdc at I_C = 1.0 mAdc and I_B = 0. This rating is validated per JEDEC test conditions and applies across the full −55°C to +150°C junction temperature range. Operation above 350 V risks avalanche breakdown and permanent damage.

Does the 2N6517CBU have a Pb-free package?

Yes, the 2N6517CBU is manufactured in a Pb-free TO-92 package compliant with RoHS Directive 2011/65/EU and J-STD-609A. The "G" suffix in ordering codes (e.g., 2N6517G) explicitly denotes Pb-free construction, and the device supports standard reflow and wave soldering profiles without lead contamination concerns.

What is the thermal resistance from junction to case for the 2N6517CBU?

The 2N6517CBU has a specified thermal resistance R_JC of 83.3°C/W at T_C = 25°C. This value is measured under standardized JEDEC conditions and enables accurate junction temperature estimation when the case is thermally coupled to a heatsink or copper plane, supporting safe operation up to its 150°C maximum junction temperature.

Can the 2N6517CBU replace the 2N6515 in existing designs?

Yes, the 2N6517CBU is a direct upgrade to the 2N6515 with identical TO-92 package, E-B-C pinout, and DC characteristics-but offers higher V_CEO (350 V vs. 250 V) and improved f_T (up to 200 MHz vs. 40 MHz). No PCB changes are required, and base drive networks remain fully compatible.

What is the typical DC current gain (h_FE) of the 2N6517CBU at 10 mA collector current?

At I_C = 10 mAdc and V_CE = 10 Vdc, the 2N6517CBU exhibits h_FE between 30 and 200, depending on unit variation and temperature. The datasheet guarantees minimum h_FE = 30 at this condition, with typical median values near 100-making it suitable for predictable base-current-limited switching designs.

2N6517CBU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20 @ 50mA, 10V

Power - Max:: 625 mW

Frequency - Transition:: 200MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N6517CBU FAQ

1.How can I place an order for 2N6517CBU through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6517CBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6517CBU reliable?

The price and inventory of 2N6517CBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6517CBU is usually 5 days.

3.What payment methods are accepted for 2N6517CBU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6517CBU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6517CBU?

2N6517CBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6517CBU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6517CBU?

For technical support, including 2N6517CBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6517CBU requirements.

6.How does Aetrix verify that 2N6517CBU is sourced from the original manufacturer or authorized distributors?

All 2N6517CBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6517CBU meets industry standards.

7.What is the process for return or replacement of 2N6517CBU?

All 2N6517CBU units undergo pre-shipment inspection (PSI). If there is an issue with 2N6517CBU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6517CBU part is unused and in its original packaging.

Return procedure for 2N6517CBU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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