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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N6517G

Name: 2N6517G
Brand: onsemi
SKU: 2N6517G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6517G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: 2N6517G.pdf

Description:: TRANS NPN 350V 0.5A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N6517G from onsemi is an NPN high-voltage general-purpose transistor in TO-92 package, rated for 350 V_CEO, 500 mA continuous collector current, and 1.5 W total dissipation at T_C = 25°C. It delivers h_FE ≥ 20 (at I_C = 100 mA, V_CE = 10 V), f_T ≥ 40 MHz, and V_CE(sat) ≤ 1.0 V (at I_C = 50 mA, I_B = 5 mA), enabling use in flyback snubber circuits, relay drivers, and HV DC-DC converter switching stages.

For engineers reviewing the 2N6517G datasheet, pinout, applications, or equivalent options, key selection criteria include verified 350 V_CEO rating, TO-92 mechanical compatibility, guaranteed f_T ≥ 40 MHz for moderate-speed switching, low leakage (I_CBO ≤ 50 nA at V_CB = 250 V), and Pb-free compliance per J-STD-609.

Technical Context

This NPN bipolar junction transistor operates in active, saturation, and cutoff regions with fixed base-emitter forward bias control. Its 350 V_CEO and 350 V_CBO ratings support operation in off-line power supplies up to 265 V_AC input, while thermal resistance R_JC = 83.3 °C/W enables direct heatsinking via lead frame when mounted on PCBs with copper pour.

Switching performance is defined by t_on ≤ 200 ns and t_off ≤ 3.5 μs under specified test conditions (V_CC = 100 V, I_C = 50 mA, I_B1 = I_B2 = 10 mA), and safe operating area (SOA) curves confirm second-breakdown immunity up to 10 ms pulses at 350 V and 100 mA.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	350 V - Supports 265 V_AC mains-derived circuits with ≥1.5× safety margin
I_C (cont.)	500 mA - Sustains relay coil drive or low-power SMPS primary switch duty
P_D @ T_C=25°C	1.5 W - Enables 1.2 W continuous dissipation with 25°C case temperature rise
h_FE	20–200 - Ensures reliable base drive design across I_C = 1–100 mA range
f_T	≥40 MHz - Supports switching frequencies up to ~5 MHz with adequate gain margin
V_CE(sat)	≤1.0 V @ I_C/I_B=10 - Limits conduction loss to <100 mW at 100 mA load
I_CBO	≤50 nA @ V_CB=250 V - Minimizes standby leakage in high-impedance bias networks

Pinout & Package

2N6517G uses TO-92 (Case 29-11, Style 2) plastic package with straight leads and Pb-free finish. Dimensions: 4.45–5.20 mm (L) × 4.32–5.33 mm (W) × 3.18–4.19 mm (H); weight ≈ 0.3 g.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to ground or low-side return path; must handle full load current
2 (Base)	Control input	Receives current-limited drive (max 250 mA) to saturate or cut off collector current
3 (Collector)	High-voltage output terminal	Switches up to 350 V; requires clearance >2.5 mm to adjacent traces per IPC-2221

Key Features

Feature	Design Value
High breakdown voltage	350 V_CEO and 350 V_CBO enable direct replacement of older 200–300 V transistors in legacy power supplies
Pb-free construction	RoHS-compliant TO-92 package meets J-STD-609 Class 3 marking requirements for lead-free soldering
Low leakage	I_CBO ≤ 50 nA at 250 V ensures stable bias in high-impedance amplifier or timer circuits
Thermal robustness	R_JC = 83.3 °C/W allows 1.2 W dissipation with ≤100°C junction rise above case temperature
Controlled SOA	Second-breakdown-limited SOA curve validated to 10 ms/350 V supports pulse-width modulated loads

Applications

Industrial Relay Driver	Off-Line Flyback Snubber
Use Scenario: Driving 24 VDC, 500 mA industrial relays from microcontroller GPIO pins. IC Role / Device Role / Timing Role: NPN switch amplifying logic-level signals to energize relay coils with galvanic isolation. Use Value: 350 V_CEO withstands 600 V+ inductive kickback without clamping diodes; V_CE(sat) ≤ 1.0 V limits coil heating.	Use Scenario: Absorbing leakage inductance energy in 15–30 W AC-DC flyback converters. IC Role / Device Role / Timing Role: Active clamp transistor triggered by auxiliary winding voltage to recycle energy. Use Value: Verified t_off ≤ 3.5 μs and SOA up to 350 V/100 mA ensure reliable clamping during 65 kHz switching cycles.
DC-DC Converter Primary Switch	High-Voltage Signal Amplifier
Use Scenario: Low-cost isolated DC-DC converter for PLC I/O modules (input 12–48 VDC, output 5 V/1 A). IC Role / Device Role / Timing Role: Primary-side switching transistor in self-oscillating Royer topology. Use Value: f_T ≥ 40 MHz supports stable oscillation at 200–500 kHz; 1.5 W P_D accommodates 0.8 W average dissipation.	Use Scenario: Amplifying 100–500 V_p-p sensor signals in high-voltage test equipment front-ends. IC Role / Device Role / Timing Role: Common-emitter amplifier stage with emitter degeneration for linearity. Use Value: V_CEO = 350 V permits 250 V collector bias; h_FE ≥ 20 ensures predictable gain with feedback stability.

Industrial Relay Driver

Off-Line Flyback Snubber

Use Scenario: Driving 24 VDC, 500 mA industrial relays from microcontroller GPIO pins.

IC Role / Device Role / Timing Role: NPN switch amplifying logic-level signals to energize relay coils with galvanic isolation.

Use Value: 350 V_CEO withstands 600 V+ inductive kickback without clamping diodes; V_CE(sat) ≤ 1.0 V limits coil heating.

Use Scenario: Absorbing leakage inductance energy in 15–30 W AC-DC flyback converters.

IC Role / Device Role / Timing Role: Active clamp transistor triggered by auxiliary winding voltage to recycle energy.

Use Value: Verified t_off ≤ 3.5 μs and SOA up to 350 V/100 mA ensure reliable clamping during 65 kHz switching cycles.

DC-DC Converter Primary Switch

High-Voltage Signal Amplifier

Use Scenario: Low-cost isolated DC-DC converter for PLC I/O modules (input 12–48 VDC, output 5 V/1 A).

IC Role / Device Role / Timing Role: Primary-side switching transistor in self-oscillating Royer topology.

Use Value: f_T ≥ 40 MHz supports stable oscillation at 200–500 kHz; 1.5 W P_D accommodates 0.8 W average dissipation.

Use Scenario: Amplifying 100–500 V_p-p sensor signals in high-voltage test equipment front-ends.

IC Role / Device Role / Timing Role: Common-emitter amplifier stage with emitter degeneration for linearity.

Use Value: V_CEO = 350 V permits 250 V collector bias; h_FE ≥ 20 ensures predictable gain with feedback stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	TO-220 package, 100 V_CEO, 2 A I_C, higher P_D (1.5 W @ T_A) but lower voltage rating	Suitable only for sub-100 V DC systems; not a drop-in replacement due to package and voltage mismatch	Select only if board layout allows TO-220 footprint and system voltage ≤ 80 VDC
2N5551	TO-92, 160 V_CEO, 600 mA I_C, f_T = 100 MHz, but insufficient for 265 V_AC-derived rails	Lacks required 350 V breakdown; requires redesign of snubber/clamp network for overvoltage protection	Acceptable only in low-voltage (<120 VDC) signal amplification or switching where 2N6517G's HV capability is unused

Compared with MJD127G and 2N5551, the 2N6517G uniquely balances TO-92 form factor, 350 V rating, and 500 mA current handling-making it irreplaceable in space-constrained, off-line auxiliary power supplies without compromising voltage safety margin.

Availability

2N6517G is available at Aetrix Electronics and suitable for industrial relay drivers, off-line flyback snubbers, DC-DC converter primary switches, high-voltage signal amplifiers, and HV timing circuits requiring stable component supply across extended production lifecycles.

Supply support for 2N6517G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in power management, analog, sensors, and discrete devices for automotive, industrial, and cloud infrastructure markets.

The 2N6517G belongs to onsemi's legacy high-voltage bipolar transistor family designed for cost-sensitive, reliability-critical power conversion and control applications in industrial and appliance systems.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6517G?

The 2N6517G has a guaranteed minimum V_CEO rating of 350 Vdc at I_C = 1.0 mA and I_B = 0, verified per JEDEC JESD22-A114 test conditions. This rating applies across the full operating junction temperature range (−55°C to +150°C) and is confirmed in the "OFF CHARACTERISTICS" table on page 2 of the official datasheet (Rev. 5, March 2007). Derating is not required below 150°C.

Is the 2N6517G pin-compatible with the 2N6515?

Yes, the 2N6517G and 2N6515 share identical TO-92 package (Style 2), pinout (Emitter-Base-Collector on pins 1-2-3), and mechanical dimensions. However, the 2N6517G offers higher 350 V_CEO/V_CBO versus 250 V for the 2N6515, making it a direct upgrade in voltage-critical designs without PCB changes.

Does the 2N6517G meet RoHS requirements?

Yes, the 2N6517G is explicitly marked as Pb-free in the Ordering Information table (page 6) and carries the "G" suffix per onsemi's part numbering convention for RoHS-compliant products. It conforms to J-STD-609 Class 3 marking standards and uses lead-free matte tin plating on leads.

What is the typical DC current gain (h_FE) of the 2N6517G at 100 mA collector current?

At I_C = 100 mA, V_CE = 10 V, and T_A = 25°C, the 2N6517G exhibits h_FE between 15 and 25 (minimum 15, typical ~20), as specified in the "ON CHARACTERISTICS" table. Figure 2 confirms this range remains stable from −55°C to +125°C junction temperature.

Can the 2N6517G be used in linear amplifier applications?

Yes-the 2N6517G supports linear operation with verified SOA up to 350 V and 100 mA for 10 ms pulses (Figure 18), and its V_BE(on) = 2.0 V max at I_C = 100 mA enables predictable biasing. However, thermal design must account for R_JA = 200 °C/W in still air, limiting continuous linear dissipation to ~300 mW without heatsinking.

2N6517G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 350 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20 @ 50mA, 10V

Power - Max:: 625 mW

Frequency - Transition:: 200MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N6517G FAQ

1.How can I place an order for 2N6517G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6517G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6517G reliable?

The price and inventory of 2N6517G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6517G is usually 5 days.

3.What payment methods are accepted for 2N6517G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6517G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6517G?

2N6517G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6517G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6517G?

For technical support, including 2N6517G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6517G requirements.

6.How does Aetrix verify that 2N6517G is sourced from the original manufacturer or authorized distributors?

All 2N6517G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6517G meets industry standards.

7.What is the process for return or replacement of 2N6517G?

All 2N6517G units undergo pre-shipment inspection (PSI). If there is an issue with 2N6517G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6517G part is unused and in its original packaging.

Return procedure for 2N6517G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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