Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2N6519RLRA

Part No.:
2N6519RLRA
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA)
Datasheet:
Aetrix2N6519RLRA.pdf
Description:
TRANS PNP 300V 0.5A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N6519RLRA from ON Semiconductor (formerly Motorola) is a PNP silicon small-signal transistor in TO-92 package, rated for 300 VCEO, 500 mA continuous collector current, and 1.5 W total dissipation at TC = 25°C. It delivers DC current gain (hFE) of 30–270 at IC = 10–100 mA and supports high-voltage switching in relay drivers and power supply control circuits.

For engineers reviewing the 2N6519RLRA datasheet, pinout, applications, or equivalent options, this page provides verified electrical specifications, thermal derating data, switching timing (ton ≤ 200 µs, toff ≤ 3.5 µs), TO-92 mechanical layout, and validated alternative parts for high-voltage PNP replacement scenarios.

Technical Context

The 2N6519RLRA employs a planar epitaxial base structure optimized for stable high-voltage operation up to 300 VCEO with low leakage (ICBO ≤ 50 nA at VCB = 200 V). Its fT of 40–200 MHz enables moderate-frequency switching while maintaining robust safe operating area (SOA) curves extending into second-breakdown-limited regions.

Thermal design is supported by RθJC = 83.3°C/W and RθJA = 200°C/W, with linear derating of 12 mW/°C above 25°C at case mounting and 5.0 mW/°C at ambient. Emitter-base breakdown is specified at 5.0 V, limiting base drive voltage compliance in saturated-switching configurations.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 300 V - Maximum collector-emitter blocking voltage before avalanche; defines upper limit for off-state voltage in high-side switch or regulator applications.
IC (continuous) 500 mA - Continuous collector current rating; sets maximum steady-state load current without thermal runaway at TC ≤ 25°C.
PD @ TC = 25°C 1.5 W - Total device dissipation at case temperature 25°C; requires heatsinking or PCB copper area for sustained >500 mW operation.
hFE (IC = 10 mA) 30–45 - DC current gain range at moderate bias; determines required base drive current for saturation in switching designs.
toff ≤ 3.5 µs - Turn-off time under VCC = −100 V, IC = 50 mA, IB1 = IB2 = −10 mA; critical for PWM frequency selection in high-voltage switching.
VCE(sat) (IC = 50 mA) ≤ 1.0 V - Collector-emitter saturation voltage at IC/IB = 10; directly impacts conduction loss and junction temperature rise during on-state.
RθJC 83.3°C/W - Junction-to-case thermal resistance; enables calculation of junction temperature rise when mounted to heatsink or metal-core PCB.

Pinout & Package

2N6519RLRA uses TO-92 (Case 29–04, Style 1) plastic package with 2.54 mm lead spacing, radial tape-in-fan-fold (RLR) packaging format, and standard through-hole mounting. Pin 1 is Collector, Pin 2 is Emitter, Pin 3 is Base - consistent with PNP polarity and Motorola's TO-92 Style 21 configuration.

Pin/Terminal Circuit Role Design Meaning
1 - Collector High-voltage output node Connected to positive rail in high-side switch; must withstand full 300 V reverse bias when off.
2 - Emitter Current return path / reference node Typically tied to system ground or load return; establishes common reference for base drive and load current sensing.
3 - Base Control input Receives negative current to turn on; requires current-limiting resistor to ensure IB ≤ 250 mA peak and VEB ≤ −5.0 V.

Key Features

Feature Design Value
High-voltage PNP switching 300 VCEO rating enables direct interface with 240 VAC-derived rails or industrial 200–280 VDC bus systems.
Low leakage performance ICBO ≤ 50 nA at VCB = 200 V ensures minimal off-state power loss and stable bias in high-impedance control circuits.
Fast turn-off capability toff ≤ 3.5 µs supports PWM frequencies up to ~100 kHz in medium-speed switching applications.
Robust thermal derating 12 mW/°C derating above 25°C at case allows predictable power handling when mounted to metal chassis or copper-clad PCB.
TO-92 radial tape compatibility RLRA suffix denotes fan-fold box packaging per EIA-468, enabling automated insertion with standard axial component feeders.

Applications

Industrial Relay Drivers High-Voltage Power Supply Control

Use Scenario: Driving electromagnetic relays with coil voltages up to 250 VDC in PLC I/O modules.

IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil current with fast turn-off to suppress back-EMF-induced contact arcing.

Use Value: 300 VCEO margin prevents breakdown during inductive kickback; toff ≤ 3.5 µs limits contact dwell time and extends relay life.

Use Scenario: Regulating output voltage in flyback or forward converter auxiliary supplies using discrete feedback loop transistors.

IC Role / Device Role / Timing Role: Error amplifier output stage translating optocoupler current into base drive for main pass transistor.

Use Value: hFE ≥ 30 at IC = 10 mA ensures stable closed-loop gain; VCE(sat) ≤ 1.0 V minimizes dropout across feedback path.

AC Mains-Sensing Circuits High-Voltage Logic Level Translation

Use Scenario: Isolated zero-crossing detection and AC line monitoring in smart energy meters and motor controllers.

IC Role / Device Role / Timing Role: PNP switch interfacing rectified AC waveform to microcontroller GPIO via resistive divider and clamping network.

Use Value: 300 VCEO withstands peak 340 V from 240 VAC mains; ICBO ≤ 50 nA avoids false triggering during low-current sensing phases.

Use Scenario: Translating TTL/CMOS logic levels to ±12 V or ±15 V control signals in analog front-end protection circuits.

IC Role / Device Role / Timing Role: Inverting level shifter converting 3.3 V/5 V logic outputs to high-voltage gate or enable signals for external drivers.

Use Value: VBE(on) ≤ 2.0 V ensures reliable turn-on with standard logic-level base drive; fT ≥ 40 MHz supports burst-mode signaling up to 10 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD2955G TO-220 package, 60 VCEO, 10 A IC, higher power but lower voltage rating. Suitable for high-current, low-voltage switching (e.g., automotive loads); not viable for >100 V applications. Select when thermal management allows TO-220 mounting and voltage requirements are ≤ 60 V.
BC639 TO-92, 80 VCEO, 1 A IC, faster fT (250 MHz), but insufficient for 300 V use cases. Applicable in low-voltage amplification and switching (e.g., audio preamp stages); fails at 200 V+ stress. Choose only where system voltage remains below 60 V and higher speed is prioritized over voltage headroom.

Compared with 2N6519RLRA, MJD2955G offers superior current handling but lacks voltage capability, while BC639 provides better speed and gain at the cost of critical 300 VCEO robustness - making 2N6519RLRA uniquely suited for industrial high-voltage PNP switching where both voltage margin and TO-92 form factor are mandatory.

Availability

2N6519RLRA is available at Aetrix Electronics and suitable for industrial relay drivers, high-voltage power supply control, and AC mains-sensing circuits requiring stable component supply with long-term manufacturing continuity.

Supply support for 2N6519RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier specializing in power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud power applications.

The 2N6519RLRA belongs to Motorola's legacy small-signal transistor family, designed specifically for high-reliability, high-voltage PNP switching in industrial controls, power conversion, and mains-connected equipment.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6519RLRA?

The 2N6519RLRA has a guaranteed VCEO rating of 300 Vdc, verified per Motorola Device Data Sheet Section 2–69. This rating applies under pulsed conditions (pulse width ≤ 300 µs, duty cycle ≤ 2.0%) and defines the absolute maximum off-state voltage the device can block without avalanche conduction. Sustained operation near this limit requires careful SOA analysis and thermal management.

Is the 2N6519RLRA a PNP or NPN transistor?

The 2N6519RLRA is a PNP bipolar junction transistor, confirmed by its negative voltage polarities in all OFF-characteristics tables (e.g., V(BR)CEO test condition specifies negative VCE), collector current direction in Figure 2 (negative mA scale), and pinout diagram showing emitter as common reference with collector and base reversed relative to NPN counterparts like 2N6515.

What does the "RLRA" suffix indicate in 2N6519RLRA?

The "RLRA" suffix denotes radial tape-in-fan-fold box packaging per Motorola Packaging Specification Section 6–5. RLRA indicates EIA-compliant TO-92 devices supplied in fan-fold boxes (Style M or P), compatible with automatic insertion equipment, with 2.5 mm pin spacing and EIA-468 mechanical compliance - distinct from bulk, ammo-pack, or reel variants.

Can the 2N6519RLRA be used in linear amplifier applications?

The 2N6519RLRA is characterized for switching operation, with published hFE data spanning IC = 1–100 mA and VCE = –10 V, and SOA curves emphasizing pulse operation. While usable in Class-A amplifiers at low currents (<10 mA), its fT variation (40–200 MHz) and lack of linearity specs (e.g., distortion, THD) make it less optimal than purpose-designed RF or audio transistors such as BC559 or MPSA92.

What is the thermal resistance from junction to ambient (RθJA) for the 2N6519RLRA?

The 2N6519RLRA has a specified RθJA of 200°C/W at TA = 25°C, per Thermal Characteristics table on page 2–69. This value assumes standard TO-92 mounting on FR-4 PCB with minimal copper; actual RθJA improves with added copper pour or thermal vias, and degrades in enclosed or high-ambient environments - requiring derating per the 5.0 mW/°C curve above 25°C.

2N6519RLRA Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA)
Packaging:
Bulk
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
300 V
Vce Saturation (Max) @ Ib, Ic:
1V @ 5mA, 50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
45 @ 30mA, 10V
Power - Max:
625 mW
Frequency - Transition:
200MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

2N6519RLRA FAQ

1.How can I place an order for 2N6519RLRA through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6519RLRA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6519RLRA reliable?

The price and inventory of 2N6519RLRA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6519RLRA is usually 5 days.

3.What payment methods are accepted for 2N6519RLRA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6519RLRA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6519RLRA?

2N6519RLRA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6519RLRA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6519RLRA?

For technical support, including 2N6519RLRA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6519RLRA requirements.

6.How does Aetrix verify that 2N6519RLRA is sourced from the original manufacturer or authorized distributors?

All 2N6519RLRA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6519RLRA meets industry standards.

7.What is the process for return or replacement of 2N6519RLRA?

All 2N6519RLRA units undergo pre-shipment inspection (PSI). If there is an issue with 2N6519RLRA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6519RLRA part is unused and in its original packaging.

Return procedure for 2N6519RLRA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N6519RLRA Tags

  • 2N6519RLRA
  • 2N6519RLRA PDF
  • 2N6519RLRA Datasheet
  • 2N6519RLRA Specifications
  • 2N6519RLRA Images
  • onsemi
  • onsemi 2N6519RLRA
  • Buy 2N6519RLRA
  • 2N6519RLRA Price
  • 2N6519RLRA Distributor
  • 2N6519RLRA Supplier
  • 2N6519RLRA Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER