onsemi 2N6519TA

Overview

2N6519TA from ON Semiconductor (formerly Fairchild) is a PNP epitaxial silicon transistor designed for high-voltage switching applications, featuring VCEO = -300 V, IC = -500 mA, PC = 625 mW, hFE = 30–270 (at IC = -1 mA to -100 mA), and TO-92 package. It serves as a robust high-voltage switch in relay drivers, power supply protection circuits, and industrial control logic.

For engineers reviewing the 2N6519TA datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, -300 V breakdown rating, saturation voltage under defined IB/IC conditions, thermal derating (5 mW/°C above 25°C), and TO-92 mechanical compatibility with legacy through-hole layouts.

Technical Context

This device operates as a medium-power, high-voltage PNP bipolar junction transistor with fully specified DC gain (hFE) across five collector current points (-1 mA to -100 mA), enabling predictable biasing in linear and saturated switching modes. Its fT of 40–200 MHz supports moderate-speed switching up to ~3.5 ns turn-off time at VCC = -100 V.

Breakdown parameters are rigorously defined: BVCBO and BVCEO both rated at -300 V with tight test conditions (IC = -100 µA and IC = -1 mA respectively), while leakage currents (ICBO ≤ -50 nA, IEBO ≤ -50 nA) ensure stable off-state integrity in high-impedance bias networks.

Key Specifications

Pinout & Package

2N6519TA is housed in a standard TO-92 plastic package with lead-free finish (per J-STD-020), dimensions compliant with JEDEC TO-92 outline (14.47 mm length × 4.58 mm width × 3.60 mm height). Leads are arranged in straight-line configuration with Emitter (pin 1), Base (pin 2), Collector (pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Compared with MPSA92 and BC639, the 2N6519TA uniquely combines -300 V rating, verified hFE ≥30 down to -1 mA, and sub-4 ns turn-off-making it optimal for high-reliability, high-voltage switching where gain stability and speed coexist.

Availability

2N6519TA is available at Aetrix Electronics and suitable for relay driver circuits, overvoltage protection switches, and high-side load switches requiring stable component supply, long-term obsolescence management, and full traceability.

Supply support for 2N6519TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud computing, and IoT applications.

The 2N6519TA belongs to ON Semiconductor's legacy high-voltage bipolar transistor family, engineered specifically for ruggedized industrial switching, power protection, and electromechanical interface applications demanding proven reliability at elevated voltages.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6519TA?

The 2N6519TA has a maximum collector-emitter voltage (VCEO) rating of -300 V at Ta = 25°C. This rating is confirmed under test condition IC = -1 mA and IB = 0, and remains valid up to TJ = 150°C with appropriate thermal derating applied. The 2N6519TA must not be operated beyond this limit to avoid avalanche breakdown or permanent damage.

Is the 2N6519TA pin-compatible with other TO-92 PNP transistors like the MPSA92?

Yes, the 2N6519TA uses the standard TO-92 package with Emitter-Base-Collector pinout (1-2-3), matching the physical pin assignment of MPSA92 and BC639. However, electrical differences-including hFE distribution, fT, and absolute maximum ratings-require validation in-circuit before substitution. The 2N6519TA itself maintains strict compliance with this pinout as documented in its official package drawing.

What is the typical VCE(sat) for the 2N6519TA under common switching conditions?

The 2N6519TA exhibits VCE(sat) = -0.30 V at IC = -10 mA and IB = -1 mA, and -0.50 V at IC = -30 mA and IB = -3 mA. These values are measured per datasheet conditions and reflect actual conduction loss in saturated switching. Designers should use the -0.30 V figure for low-current logic-level drive scenarios involving the 2N6519TA.

Does the 2N6519TA support high-frequency switching applications?

Yes-the 2N6519TA has a current gain bandwidth product (fT) of 40–200 MHz and a measured turn-off time (tOFF) of 3.5 ns under VCC = -100 V and IC = -50 mA. These characteristics enable reliable operation in PWM-based power control and fast digital switching up to several megahertz, provided base drive strength and layout parasitics are optimized for the 2N6519TA.

How does thermal derating apply to the 2N6519TA's power dissipation?

The 2N6519TA has a maximum collector power dissipation (PC) of 625 mW at 25°C, derating linearly by 5 mW/°C above that temperature. At 100°C ambient, usable dissipation drops to 250 mW. This derating curve is defined in the Absolute Maximum Ratings table and must be applied using junction-to-ambient thermal resistance calculations to ensure TJ ≤ 150°C during sustained operation of the 2N6519TA.