onsemi 2N6520BU

Overview

2N6520BU from onsemi is a PNP high-voltage bipolar junction transistor designed for switching and linear amplification in high-breakdown-voltage applications. It features V_CEO = 350 V, I_C = 500 mA, P_D = 1.5 W at T_C = 25°C, h_FE ≥ 20 (at I_C = 100 mA), and TO-92 package. It is used in relay drivers, high-voltage power supplies, and industrial control circuits.

For engineers reviewing the 2N6520BU datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, 350 V collector-emitter breakdown rating, thermal resistance R_JC = 83.3°C/W, safe operating area under pulse conditions, and Pb-free TO-92 mechanical compatibility.

Technical Context

The 2N6520BU operates as a medium-power PNP BJT with negative-polarity voltage and current ratings per datasheet convention. Its DC current gain h_FE is specified across I_C = 1–100 mA at V_CE = −10 V, with minimum values of 20–30 depending on bias point. The device supports switching operation with t_on ≤ 200 ns and t_off ≤ 3.5 µs under defined test conditions (V_CC = −100 V, I_C = 50 mA).

Thermal design relies on junction-to-case conduction path (R_JC = 83.3°C/W) and junction-to-ambient dissipation (R_JA = 200°C/W). Safe operating area curves define second-breakdown-limited boundaries below rated V_CEO, with pulse power derating governed by transient thermal impedance Z_JC(t).

Key Specifications

Pinout & Package

2N6520BU is housed in a Pb-free TO-92 (Case 29-11, Style 2) package with straight leads. Pin 1 is Base, Pin 2 is Emitter, Pin 3 is Collector - confirmed per marking diagram and mechanical outline documentation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Compared with MJD2955G and 2N4403, the 2N6520BU uniquely balances TO-92 form factor, 350 V blocking, and 500 mA capability-making it irreplaceable in space-constrained, high-voltage industrial controls where neither higher-power nor lower-voltage alternatives satisfy all three requirements simultaneously.

Availability

2N6520BU is available at Aetrix Electronics and suitable for relay drivers, high-voltage auxiliary power supplies, industrial motor control interfaces, and overvoltage protection circuits requiring stable component supply across extended production lifecycles.

Supply support for 2N6520BU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6520BU belongs to onsemi's legacy high-voltage discrete transistor family, engineered for robustness in industrial control, power conversion, and protection circuits where reliability under electrical stress is critical.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6520BU?

The 2N6520BU has a maximum collector-emitter voltage rating (V_CEO) of 350 Vdc, as specified in the Absolute Maximum Ratings table of the official onsemi datasheet (Rev. 5, March 2007). This rating applies under open-base conditions and defines the upper limit for safe DC or repetitive peak voltage across the collector and emitter terminals without breakdown. Exceeding this value risks permanent device failure.

Is the 2N6520BU a PNP or NPN transistor?

The 2N6520BU is a PNP bipolar junction transistor. This is explicitly stated in the datasheet title ("NPN − 2N6515, 2N6517; PNP − 2N6520") and confirmed by all parameter polarities: negative V_CEO, V_CBO, and V_EBO values, and reverse-signed current and voltage conventions throughout the Electrical Characteristics tables. Its pinout (Base=1, Emitter=2, Collector=3) follows TO-92 Style 2 for PNP devices.

What package type does the 2N6520BU use, and is it RoHS-compliant?

The 2N6520BU uses a TO-92 package (Case 29-11, Style 2) with straight leads and is marked "Pb-Free" in the Ordering Information section. The datasheet confirms compliance with lead-free requirements, and the device is shipped in tape-and-reel format (2N6520RLRAG). Mechanical dimensions match JEDEC TO-226 standards, and soldering guidelines align with onsemi's Pb-Free Soldering Reference Manual.

What is the DC current gain (h_FE) range for the 2N6520BU at typical operating conditions?

The 2N6520BU exhibits h_FE = 20–200, depending on collector current and temperature. At I_C = 100 mA and V_CE = −10 V, the minimum guaranteed h_FE is 15 (per Table on page 2), while typical curves (Figure 3) show values up to 200 at I_C = 10 mA. Designers should use the minimum value (15–20) for worst-case base drive calculations in saturation switching applications.

Can the 2N6520BU be used in switching applications, and what are its key timing parameters?

Yes, the 2N6520BU is qualified for switching use. Key timing parameters from the datasheet include turn-on time (t_on) ≤ 200 ns and turn-off time (t_off) ≤ 3.5 µs, measured under V_CC = −100 V, I_C = 50 mA, and I_B1 = I_B2 = 10 mA. These values confirm suitability for kHz-range switching in power supplies and relay drivers, though layout parasitics and drive strength significantly influence real-world performance.