onsemi 2N6520RLRA

Overview

2N6520RLRA from onsemi is a PNP high-voltage general-purpose transistor in TO-92 package, rated for V_CEO = 350 V, I_C = 500 mA, and P_D = 1.5 W at T_C = 25°C. It delivers h_FE ≥ 20 at I_C = 10 mA and V_CE = −10 V, with V_CE(sat) ≤ 0.50 V at I_C = 30 mA / I_B = 3.0 mA, and is used in high-voltage linear regulators and relay drivers.

For engineers reviewing the 2N6520RLRA datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, 350 V collector-emitter breakdown, TO-92 mechanical compatibility, thermal resistance R_JC = 83.3°C/W, and switching times t_on ≤ 200 ns and t_off ≤ 3.5 µs under specified test conditions.

Technical Context

The 2N6520RLRA is a silicon planar epitaxial PNP bipolar junction transistor optimized for high-voltage switching and linear amplification. Its structure supports stable operation up to T_J = +150°C and down to −55°C, with low leakage (I_CBO ≤ 50 nA at V_CB = 250 V, I_EBO ≤ 50 nA at V_EB = 4.0 V) and predictable gain variation across temperature.

It exhibits f_T = 40 MHz at I_C = 10 mA, V_CE = −20 V, enabling moderate-frequency switching; C_eb = 100 pF and C_cb = 6.0 pF at rated bias points confirm suitability for <100 kHz power control circuits where capacitive loading must be minimized.

Key Specifications

Pinout & Package

2N6520RLRA uses the TO-92 package (Case 29-11), with standardized lead assignment: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. The package is through-hole mountable, Pb-free compliant (per 2N6520RLRAG variant), and rated for industrial temperature operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Compared with MJD2955G and 2N4403, the 2N6520RLRA uniquely balances TO-92 form factor with 350 V rating-enabling compact high-voltage designs where neither high-current TO-220 nor low-voltage signal transistors meet requirements.

Availability

2N6520RLRA is available at Aetrix Electronics and suitable for high-voltage linear regulators, electromechanical relay drivers, DC motor brake circuits, and overvoltage protection clamps requiring stable component supply and industrial temperature compliance.

Supply support for 2N6520RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6520RLRA belongs to onsemi's legacy high-voltage bipolar transistor family, designed specifically for robust, cost-effective replacement of aging PNP devices in industrial power control, telecom infrastructure, and appliance safety circuits.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6520RLRA?

The 2N6520RLRA has a maximum collector-emitter voltage rating (V_CEO) of 350 Vdc, verified per the official onsemi datasheet Rev. 4 (May 2004). This rating applies under standard test conditions (I_C = 1.0 mA, I_B = 0) and defines the absolute upper limit before avalanche breakdown occurs in common-emitter configuration. Exceeding this voltage risks irreversible device failure.

Is the 2N6520RLRA a PNP or NPN transistor?

The 2N6520RLRA is a PNP bipolar junction transistor, confirmed by its negative voltage polarity conventions in the datasheet: V_CEO, V_CBO, and V_EBO ratings are all specified as positive values but applied with reversed polarity relative to NPN devices. Figure 3 explicitly plots h_FE for "PNP 2N6520", and the marking diagram shows emitter-base-collector pinout consistent with PNP topology.

What package type does the 2N6520RLRA use, and what are its pin assignments?

The 2N6520RLRA uses the TO-92 package (Case 29-11), with pin 1 = Emitter, pin 2 = Base, and pin 3 = Collector, as defined in the "PACKAGE DIMENSIONS" section and marking diagram on page 8 of the onsemi datasheet. This through-hole package is Pb-free compliant and mechanically identical to industry-standard TO-92 footprints used for discrete BJTs.

Does the 2N6520RLRA have a documented thermal resistance specification?

Yes-the 2N6520RLRA has a documented thermal resistance from junction to case (R_JC) of 83.3°C/W, and from junction to ambient (R_JA) of 200°C/W, both specified in the "THERMAL CHARACTERISTICS" table on page 1 of the onsemi datasheet. These values are measured at T_A = 25°C and are essential for calculating safe operating temperatures under given power dissipation and heatsinking conditions.

What is the DC current gain (h_FE) range for the 2N6520RLRA at 10 mA collector current?

At I_C = 10 mA and V_CE = −10 V, the 2N6520RLRA exhibits h_FE ranging from 20 (minimum) to 200 (maximum), as stated in the "ELECTRICAL CHARACTERISTICS" table on page 2 of the onsemi datasheet. This wide gain spread reflects process variation and must be accounted for in base drive design-especially in linear applications where gain directly affects regulation accuracy.