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onsemi 2N6667
- Part No.:
- 2N6667
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
2N6667.pdf
- Description:
- TRANS PNP DARL 60V 10A TO-220
- Quantity:
- Payment:
- Shipping:
Inventory:9,461
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Product details
Overview
2N6667 from onsemi is a PNP silicon Darlington power transistor in TO-220AB package, rated for 10 A continuous collector current, 60 Vdc minimum collector-emitter sustaining voltage (VCEO(sus)), and 65 W total device dissipation at TC = 25°C. It delivers high DC current gain (hFE = 3500 typ. at IC = 4.0 Adc) and low saturation voltage (VCE(sat) = 2.0 Vdc max at IC = 5.0 Adc), making it suitable for low-speed switching and general-purpose amplifier applications in industrial power control circuits.
For engineers reviewing the 2N6667 datasheet, pinout, applications, or equivalent options, key selection considerations include its monolithic Darlington construction with built-in base-emitter shunt resistors, thermal resistance of 1.92°C/W (junction-to-case), and RoHS-compliant Pb-free packaging - all critical for reliable thermal management and PCB-level compliance in legacy power stage designs.
Technical Context
The 2N6667 implements a monolithic PNP Darlington pair with integrated ~8 kΩ and ~120 Ω base-emitter shunt resistors, enabling self-biasing and reducing external component count. Its safe operating area (SOA) is bounded by second breakdown limits (1 ms pulse, 10% duty cycle) and thermal limits, with peak junction temperature rated to +150°C.
Electrical behavior is characterized by low-frequency small-signal current gain (hfe = 1000 at IC = 1.0 Adc, f = 1 kHz), bandwidth product |hfe| = 20 MHz, and output capacitance Cob = 200 pF at VCB = 10 Vdc - confirming suitability for DC and low-speed (<100 kHz) switching rather than RF or high-frequency amplification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO(sus) | 60 Vdc min - defines maximum sustainable voltage across C–E under open-base switching conditions, critical for overvoltage margin in relay drivers or motor controls. |
| IC(continuous) | 10 Adc - continuous collector current rating at TC = 25°C; derates linearly above 25°C at 0.52 W/°C. |
| hFE | 3500 typ. @ IC = 4.0 Adc - enables low base drive current (e.g., ~1.1 mA to switch 4 A), simplifying driver stage design. |
| VCE(sat) | 2.0 Vdc max @ IC = 5.0 Adc, IB = 0.01 Adc - determines conduction loss (10 W at 5 A), directly impacting thermal design and efficiency. |
| RθJC | 1.92°C/W max - junction-to-case thermal resistance; dictates heatsink interface requirements for maintaining TJ ≤ 150°C. |
| PD @ TC = 25°C | 65 W - maximum power dissipation with case held at 25°C; sets upper bound for steady-state thermal design. |
| fT | 20 MHz - current gain–bandwidth product; confirms usable frequency range limited to low-speed switching (≤100 kHz). |
Pinout & Package
2N6667 is housed in a TO-220AB (Case 221A, Style 1) package with three leads: Collector (pin 1), Base (pin 2), Emitter (pin 3). The metal tab is electrically connected to the collector and must be insulated from chassis ground unless collector is referenced to system ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab) | Collector | Electrically tied to metal tab; requires insulating washer if mounted to grounded heatsink. |
| Pin 2 | Base | Input control terminal; internal ~8 kΩ shunt resistor provides turn-off bias path. |
| Pin 3 | Emitter | Output reference terminal; internal ~120 Ω resistor stabilizes Darlington pair operation. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington with integrated shunt resistors | Eliminates need for external base pull-down and emitter stabilization resistors, reducing BOM count and layout area. |
| Pb-free and RoHS-compliant construction | Meets global environmental compliance mandates without requiring process requalification for legacy industrial designs. |
| High hFE (3500 typ.) at 4 A | Reduces required base drive current by >10× versus standard power transistors, easing microcontroller GPIO or logic-level driver compatibility. |
| TO-220AB mechanical robustness | Supports >65 W dissipation with standard heatsinking; standardized footprint enables drop-in replacement in existing power stage layouts. |
| –65°C to +150°C operating junction range | Validates use in uncontrolled ambient environments such as industrial motor drives or outdoor power supplies. |
Applications
| DC Motor Control | Relay Driver Circuit |
|---|---|
|
Use Scenario: Driving 24 V DC brushed motors in industrial actuators with PWM frequencies below 5 kHz. IC Role / Device Role / Timing Role: High-current PNP switch controlling motor current path to ground via emitter-follower configuration. Use Value: High hFE reduces base drive burden on MCU outputs; 60 V VCEO(sus) accommodates inductive kickback up to 48 V systems. |
Use Scenario: Replacing electromechanical relays in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Low-speed switching element interfacing 24 V DC control logic to 120 V AC solenoid loads via opto-isolated driver stage. Use Value: Built-in base-emitter shunt resistors ensure reliable turn-off without external components; TO-220 mounting supports DIN-rail heatsink integration. |
| Linear Power Supply Regulator | Overcurrent Protection Stage |
|
Use Scenario: Pass transistor in adjustable 0–30 V, 5 A bench power supply with analog feedback loop. IC Role / Device Role / Timing Role: Series pass element operating in linear mode, dissipating up to 40 W during regulation. Use Value: 65 W PD rating and 1.92°C/W RθJC enable stable operation with moderate heatsinking; low VCE(sat) minimizes dropout voltage. |
Use Scenario: Current-limiting switch in battery charger protection circuit that disables output when load exceeds 8 A. IC Role / Device Role / Timing Role: Fast-turn-off current sense switch triggered by comparator output during overcurrent events. Use Value: 15 A peak collector rating allows brief surge tolerance; VCEO(sus) = 60 V ensures reliability during transient overvoltage faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP Darlington power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2N6387 | Complementary NPN Darlington; VCEO(sus) = 60 Vdc, IC = 10 A, same TO-220AB package. | Used in push-pull or complementary symmetry amplifier stages where NPN pairing is required. | Select 2N6387 only when NPN polarity and matched gain/voltage specs are needed alongside 2N6667 in dual-rail designs. |
| MJ11015G | Higher VCEO(sus) = 100 Vdc, higher hFE = 1000–3000 (min–max), same TO-220AB package but different pinout (C-B-E vs C-E-B). | Better suited for 72 V industrial bus systems or designs requiring wider SOA margins at elevated voltages. | Choose MJ11015G only after verifying pinout compatibility and recalculating base drive; not a drop-in replacement due to reversed emitter/base pins. |
Compared with 2N6667, 2N6387 offers complementary NPN functionality in identical packaging but cannot replace it directly in PNP roles, while MJ11015G provides higher voltage headroom and broader SOA but demands PCB layout revision due to non-identical pin assignment.
Availability
2N6667 is available at Aetrix Electronics and suitable for industrial motor control, PLC output modules, and linear power supply designs requiring stable component supply, long-lifecycle support, and RoHS-compliant discrete power transistors.
Supply support for 2N6667 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 2N6667 belongs to onsemi's legacy silicon power transistor product line, designed specifically for cost-sensitive, thermally demanding, low-speed switching and linear amplification applications in industrial automation and power conversion equipment.
FAQ
What is the maximum continuous collector current rating for the 2N6667?
The 2N6667 has a maximum continuous collector current (IC) rating of 10 Adc at case temperature TC = 25°C. This rating decreases linearly with increasing case temperature at a rate of 0.52 W/°C for power dissipation, meaning sustained operation above 25°C requires derating to maintain junction temperature within the –65°C to +150°C range. The 2N6667 must be mounted on an appropriately sized heatsink to sustain this current in real-world conditions.
Does the 2N6667 have built-in base-emitter resistors, and what is their function?
Yes, the 2N6667 features monolithic integration of two shunt resistors: approximately 8 kΩ between base and emitter, and ~120 Ω in series with the emitter. These resistors provide automatic turn-off biasing and stabilize the Darlington pair against thermal runaway. As a result, the 2N6667 operates reliably without external base pull-down components - a key advantage confirmed in the official onsemi datasheet for the 2N6667.
What is the collector-emitter sustaining voltage (VCEO(sus)) specification for the 2N6667?
The 2N6667 has a minimum collector-emitter sustaining voltage VCEO(sus) of 60 Vdc, tested at IC = 200 mAdc with IB = 0. This parameter defines the maximum voltage the device can block in the off state under switching conditions before entering avalanche or secondary breakdown. It is distinct from VCEO and reflects ruggedness in inductive load switching - a critical spec verified in the 2N6667 datasheet's OFF CHARACTERISTICS table.
Can the 2N6667 be used in linear regulator applications, and what thermal considerations apply?
Yes, the 2N6667 is suitable for linear regulator pass transistor applications due to its 65 W power dissipation rating at TC = 25°C and 1.92°C/W junction-to-case thermal resistance. To operate safely in linear mode, the device must be mounted on a heatsink capable of maintaining TC ≤ 25°C under worst-case load - for example, dissipating 40 W requires a heatsink-to-ambient thermal resistance of ≤ 1.5°C/W when ambient is 50°C. The 2N6667 datasheet provides full SOA and thermal response curves to validate such use.
Is the 2N6667 pin-compatible with other TO-220 Darlington transistors like the 2N6387?
No, the 2N6667 is not pin-compatible with the 2N6387. While both use the TO-220AB package, the 2N6667 has Collector–Base–Emitter (C–B–E) pinout (pin 1 = C, pin 2 = B, pin 3 = E), whereas the 2N6387 uses Collector–Emitter–Base (C–E–B). Swapping them without board revision will cause immediate circuit failure. The 2N6667 datasheet explicitly labels pin 1 as collector (tab), pin 2 as base, and pin 3 as emitter - a configuration unique to this PNP Darlington family.
2N6667 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 10 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 100mA, 10A
- Current - Collector Cutoff (Max):
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 5A, 3V
- Power - Max:
- 2 W
- Frequency - Transition:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
2N6667 FAQ
1.How can I place an order for 2N6667 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N6667 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N6667 reliable?
The price and inventory of 2N6667 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6667 is usually 5 days.
3.What payment methods are accepted for 2N6667?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6667 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N6667?
2N6667 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N6667 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N6667?
For technical support, including 2N6667 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6667 requirements.
6.How does Aetrix verify that 2N6667 is sourced from the original manufacturer or authorized distributors?
All 2N6667 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6667 meets industry standards.
7.What is the process for return or replacement of 2N6667?
All 2N6667 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6667, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N6667 part is unused and in its original packaging.
Return procedure for 2N6667:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N6667 Tags
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MMBT3906LT1G
onsemi
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MMBT3904-7-F
Diodes Incorporated
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MMBT3904LT1G
onsemi
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MMBT3906-7-F
Diodes Incorporated
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MMBT3904-TP
Micro Commercial Co
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MMBT2222A-7-F
Diodes Incorporated
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BC846BLT1G
onsemi
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BC847B,215
Nexperia USA Inc.
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SMMBT3904LT1G
onsemi
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MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
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MMBT2222ALT1G
onsemi
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