onsemi 2N6667G

Overview

2N6667G from onsemi is a PNP silicon Darlington power transistor in TO-220AB package, designed for low-speed switching and general-purpose amplifier applications. It delivers 10 A continuous collector current, 60 V minimum collector-emitter sustaining voltage (V_CEO(sus)), and 2.0 V maximum saturation voltage at 5.0 A - enabling robust operation in relay drivers and industrial control loads.

For engineers reviewing the 2N6667G datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (h_FE = 1000–20,000), thermal resistance (R_θJC = 1.92 °C/W), built-in base-emitter shunt resistors, and Pb-free RoHS-compliant packaging - all critical for high-reliability linear and switching designs.

Technical Context

The 2N6667G implements a monolithic Darlington pair with integrated ~8 kΩ and ~120 Ω base-emitter shunt resistors, eliminating external bias components. Its structure supports high DC current gain (h_FE ≥ 1000 at I_C = 5.0 A) while maintaining low V_CE(sat) ≤ 2.0 V under same conditions.

Rated for –65 °C to +150 °C junction temperature, it operates within safe limits defined by second-breakdown and thermal constraints - with maximum power dissipation of 65 W at T_C = 25 °C and derating slope of 0.52 W/°C above that point.

Key Specifications

Pinout & Package

2N6667G uses the standard TO-220AB package (Case 221A) with three leads: Collector (Tab), Base (Lead 1), Emitter (Lead 2). The metal tab is electrically connected to the collector and must be insulated from chassis ground unless circuit topology requires collector-to-heatsink connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington power transistor applications.

Compared with MJD6227G and BDX54C, the 2N6667G offers optimal balance of 60 V rating, integrated biasing, and high h_FE - making it preferred for 24–48 V industrial controls where board space and reliability are prioritized over ultra-low cost or extreme voltage headroom.

Availability

2N6667G is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor control circuits, and linear regulator pass elements requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for 2N6667G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6667G belongs to onsemi's legacy silicon power transistor family, engineered for rugged, high-gain switching and amplification in cost-sensitive industrial controls - emphasizing reliability, thermal robustness, and ease of integration.

FAQ

What is the maximum continuous collector current rating for the 2N6667G?

The 2N6667G is rated for 10 A continuous collector current (I_C) at case temperature T_C = 25 °C. This rating assumes proper heatsinking and derates linearly at 0.52 W/°C above 25 °C. At elevated case temperatures, the usable current must be reduced per the thermal derating curve in Figure 3 of the official datasheet to maintain junction temperature below 150 °C.

Does the 2N6667G have built-in base-emitter resistors, and what values are used?

Yes, the 2N6667G integrates two monolithic shunt resistors: approximately 8 kΩ between base and emitter, and approximately 120 Ω in parallel with the emitter-base junction. These resistors provide automatic turn-off biasing, eliminating the need for external bleeder components and improving switching consistency - a key feature confirmed in the "Features" section and schematic (Figure 1) of the 2N6667/D datasheet.

What is the collector-emitter sustaining voltage (V_CEO(sus)) specification for the 2N6667G?

The 2N6667G has a minimum collector-emitter sustaining voltage V_CEO(sus) of 60 Vdc at I_C = 200 mAdc and I_B = 0, as specified in the Maximum Ratings and Electrical Characteristics tables. This parameter reflects its ability to block voltage under open-base switching conditions - distinct from V_CEO and critical for inductive load commutation safety.

Can the 2N6667G be used in linear regulator applications, and what thermal considerations apply?

Yes, the 2N6667G is commonly used as a pass transistor in linear regulators due to its high h_FE and low V_CE(sat). However, thermal design is critical: with R_θJC = 1.92 °C/W, even moderate power dissipation (e.g., 15 W at 3 A × 5 V drop) requires a heatsink capable of maintaining T_C ≤ 65 °C to stay within the 65 W maximum rating. Junction temperature must remain ≤150 °C under worst-case load and ambient conditions.

Is the 2N6667G pin-compatible with the 2N6668G, and how do their specifications differ?

No, the 2N6667G and 2N6668G are not pin-compatible replacements - they share identical TO-220AB packaging and pinout, but differ electrically: the 2N6668G has higher V_CEO(sus) (80 V vs. 60 V) and V_CB (80 V vs. 60 V), while all other parameters (I_C, h_FE, V_CE(sat), package) match. Substitution requires verifying voltage margin in the target circuit; the 2N6667G remains appropriate for ≤60 V applications.