STMicroelectronics 2N720A
- Part No.:
- 2N720A
- Manufacturer:
- STMicroelectronics
- Category:
- Single Bipolar Transistors
- Package:
- TO-206AA, TO-18-3 Metal Can
- Datasheet:
-
2N720A.pdf
- Description:
- TRANS NPN 80V 0.5A TO-18
- Quantity:
- Payment:

- Shipping:

Inventory:9,440
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2N720A from Microsemi (now Microchip Technology) is a military-qualified NPN silicon bipolar junction transistor designed for low-power amplification and switching in ruggedized analog and pulse circuits. It features VCEO = 80 V, IC = 500 mA, PT = 0.5 W at TA = +25°C, hFE = 20–120 (depending on IC), and operates across –65°C to +200°C junction temperature range - used in avionics power sequencing, missile telemetry front-end stages, and radiation-tolerant sensor interfaces.
For engineers reviewing the 2N720A datasheet, 2N720A pinout, 2N720A application, or 2N720A equivalent, key selection considerations include its MIL-PRF-19500/182 Level qualified reliability, TO-18 metal-can package thermal performance (RθJC = 97°C/W), VCER = 100 V capability with base-emitter resistor biasing, and verified operation under extended temperature and high-reliability stress screening.
Technical Context
This device is a discrete NPN BJT optimized for linear amplification and fast-switching roles where military-grade reliability and wide-temperature operation are mandatory. Its hFE variation (20–120) reflects intentional gain grading across test conditions (IC = 0.1–150 mA), and VCE(sat) ≤ 5.0 V at IC = 150 mA / IB = 15 mA confirms usable saturation under moderate drive.
Dynamic parameters include |hfe| ≥ 3.0 at 20 MHz (IC = 50 mA), Cobo = 2–15 pF, and ton + toff ≤ 30 ns - confirming suitability for medium-frequency pulse amplification and timing-critical switching up to ~10 MHz fundamental bandwidth.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 Vdc - maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage headroom in amplifier or switch configurations. |
| IC | 500 mAdc - continuous DC collector current rating; sets upper limit for load-driving capability in linear or saturated operation. |
| PT @ TA = 25°C | 0.5 W - total power dissipation limit at ambient; requires heatsinking or derating above 25°C (2.86 mW/°C). |
| hFE | 20–120 - DC current gain range across IC = 0.1–150 mA; enables predictable bias design but necessitates gain-bin awareness in production. |
| RθJC | 97 °C/W - junction-to-case thermal resistance; determines temperature rise from die to TO-18 case surface under conduction-cooled mounting. |
| ton + toff | ≤ 30 ns - combined switching time; supports pulse applications with repetition rates up to ~30 MHz (limited by storage time and capacitance). |
Pinout & Package
2N720A is housed in a hermetically sealed TO-18 (TO-206AA) metal-can package with three axial leads: Emitter (lead 1), Base (lead 2), Collector (lead 3), where lead 3 is internally connected to the case and must be electrically tied to system ground or low-impedance return path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (Emitter) | Current exit node for majority carriers | Reference terminal for bias network; often grounded in common-base or common-collector configurations. |
| Lead 2 (Base) | Control electrode for minority carrier injection | Requires current-limited drive (e.g., RBE = 10 Ω per VCER test condition) to ensure safe switching and avoid second breakdown. |
| Lead 3 (Collector) | Main current input node; internally bonded to case | Must be connected to lowest-impedance system potential (typically chassis ground) to maintain thermal and EMI integrity; not isolated from package. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/182 Level Qualified | Qualified to Level S (screened per MIL-STD-750, including burn-in, temperature cycling, and life test) - ensures traceable reliability for defense/aerospace programs. |
| VCER = 100 V with RBE = 10 Ω | Enables higher transient voltage tolerance than VCEO when base is actively clamped - critical for inductive load switching and surge immunity. |
| Junction Temp Range: –65°C to +200°C | Validated operation across extreme environments without parameter drift or failure - required for engine-mounted or space-grade electronics. |
| TO-18 Hermetic Metal Package | Provides EMI shielding, moisture resistance, and mechanical robustness unmatched by plastic packages - essential for high-integrity signal paths. |
Applications
| Avionics Power Sequencing | Missile Telemetry Front-End |
|---|---|
Use Scenario: Controlled turn-on of cascaded voltage rails during aircraft cold-start, ensuring proper reset timing and avoiding bus contention. IC Role / Device Role / Timing Role: Discrete NPN switch driving Darlington or MOSFET gate enable lines with precise current limiting and thermal margin. Use Value: VCER = 100 V withstands inductive kickback from relay coils; TO-18 package survives vibration and thermal shock in flight control bays. | Use Scenario: Amplifying low-level RF-modulated telemetry signals from onboard sensors prior to upconversion and transmission. IC Role / Device Role / Timing Role: Low-noise, medium-gain preamplifier stage operating at 1–10 MHz with stable hFE across –40°C to +85°C ambient. Use Value: |hfe| ≥ 3.0 at 20 MHz and Cobo ≤ 15 pF preserve signal integrity; MIL qualification ensures data continuity under launch acceleration. |
| Radiation-Tolerant Sensor Interface | High-Reliability Pulse Generator |
Use Scenario: Conditioning output from nuclear radiation detectors (e.g., Geiger-Müller tubes) in satellite payload subsystems exposed to TID > 100 krad(Si). IC Role / Device Role / Timing Role: Linear amplifier converting microamp-level pulses into logic-compatible voltage swings while rejecting single-event transients. Use Value: Wide TJ range (–65°C to +200°C) accommodates passive thermal management in vacuum; hermetic TO-18 prevents parametric shift due to outgassing. | Use Scenario: Generating clean, repeatable 10–100 ns pulses for laser diode triggering or time-of-flight measurement in guided munitions. IC Role / Device Role / Timing Role: Fast-switching saturating driver with ton + toff ≤ 30 ns and low storage time, biased via fixed RBE = 10 Ω. Use Value: VCE(sat) ≤ 5.0 V ensures minimal pulse distortion; TO-18 case grounding minimizes ground bounce in high-dI/dt edge generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low-power switching and amplification applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2N1893 | Higher PT = 0.8 W @ TA, RθJC = 58°C/W, TO-5 package | Preferred for higher-power analog stages requiring better thermal dissipation; larger footprint and different mounting interface | Select when >0.5 W dissipation is needed and board space allows TO-5; verify mechanical fit and thermal interface design. |
| JANTXV 2N2222A | Lower VCEO = 60 V, hFE = 100–300, same TO-18 package | Used in commercial/military general-purpose amplification; less suited for 80–100 V transient environments | Choose only if VCEO margin is sufficient and gain consistency is prioritized over ruggedness; not qualified to same screening level. |
Compared with 2N720A, 2N1893 offers superior thermal handling in TO-5 but sacrifices compactness, while JANTXV 2N2222A trades off voltage rating and qualification rigor for broader gain distribution - making 2N720A optimal for size-constrained, high-VCEO, and mission-critical deployments.
Availability
2N720A is available at Aetrix Electronics and suitable for avionics power sequencing, missile telemetry front-end stages, and radiation-tolerant sensor interfaces requiring stable component supply across extended temperature and long-lifecycle programs.
Supply support for 2N720A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets, emphasizing radiation hardness, extended temperature operation, and military qualification.
The JAN-series bipolar transistor product line - including 2N720A - was developed specifically for applications demanding guaranteed performance under MIL-PRF-19500 screening, hermetic packaging, and operation beyond commercial temperature limits.
FAQ
Is 2N720A RoHS-compliant?
No - 2N720A is manufactured to legacy MIL-PRF-19500 specifications and contains leaded solder and internal construction incompatible with RoHS Directive 2011/65/EU. It is intended for exempted defense, aerospace, and high-reliability applications where RoHS compliance is not mandated.
What is the maximum allowable base current for continuous operation?
The datasheet does not specify a standalone IB(max), but IC = 500 mA and hFE(min) = 20 imply IB ≤ 25 mA for full saturation. Derating to ≤ 15 mA (as used in VCE(sat) test) is recommended for reliability; exceeding this risks thermal runaway or bond-wire failure in TO-18.
Can 2N720A be used in common-base configuration?
Yes - its VCB0 = 120 V and Cobo = 2–15 pF make it suitable for common-base RF amplifiers up to ~10 MHz. The TO-18 case must be grounded to minimize stray capacitance, and emitter input impedance (hib = 4–8 Ω) requires careful matching to low-Z sources.
Does Aetrix stock screened (JANTXV) grade units?
Yes - Aetrix Electronics maintains inventory of 2N720A in JANTXV screening grade, fully tested per MIL-STD-750 Method 1019 (life test), Method 1021 (thermal shock), and Method 1037 (burn-in), with full traceability to lot and wafer.
2N720A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-206AA, TO-18-3 Metal Can
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 5V @ 15mA, 150mA
- Current - Collector Cutoff (Max):
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 150mA, 10V
- Power - Max:
- 500 mW
- Frequency - Transition:
- -
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-18
2N720A FAQ
1.How can I place an order for 2N720A through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N720A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N720A reliable?
The price and inventory of 2N720A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N720A is usually 5 days.
3.What payment methods are accepted for 2N720A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N720A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N720A?
2N720A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N720A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N720A?
For technical support, including 2N720A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N720A requirements.
6.How does Aetrix verify that 2N720A is sourced from the original manufacturer or authorized distributors?
All 2N720A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N720A meets industry standards.
7.What is the process for return or replacement of 2N720A?
All 2N720A units undergo pre-shipment inspection (PSI). If there is an issue with 2N720A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N720A part is unused and in its original packaging.
Return procedure for 2N720A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N720A Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

