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NXP Semiconductors 2PA1774R,135

Part No.:
2PA1774R,135
Manufacturer:
NXP Semiconductors
Category:
Single Bipolar Transistors
Package:
SC-75, SOT-416
Datasheet:
Aetrix2PA1774R,135.pdf
Description:
TRANS PNP 50V 0.15A SC-75
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,170

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Product details

Overview

2PA1774R from Nexperia is a PNP general-purpose bipolar junction transistor in SOT416 (SC-75) package, rated for −50 V VCEO, −150 mA IC, and 150 mW Ptot, with DC current gain (hFE) of 180–390 at IC = −1 mA. It serves as a low-voltage, low-current switch or amplifier in consumer audio signal routing and EDP peripheral control circuits.

For engineers reviewing the 2PA1774R datasheet, 2PA1774R pinout, 2PA1774R application, or 2PA1774R equivalent, key selection criteria include its verified −50 V collector-emitter breakdown, 180–390 hFE range at low bias, −200 mV VCE(sat) at −50 mA/−5 mA drive, 2.2 pF Cc, and 100 MHz fT - all confirmed for the 2PA1774R variant per NXP Semiconductors Rev. 05 data sheet.

Technical Context

The 2PA1774R operates as a silicon PNP BJT with base-controlled current amplification, optimized for linear amplification and saturated switching in low-power analog and digital interface stages. Its thermal resistance Rth(j-a) is 833 K/W on FR4 PCB, limiting continuous operation to ≤150 °C junction temperature under ambient conditions.

It exhibits low leakage: ICBO ≤ −100 nA at VCB = −30 V and Tj = 25 °C, rising to ≤ −5 μA at 150 °C, and IEBO ≤ −100 nA at VEB = −4 V. The transition frequency fT of ≥100 MHz confirms suitability for audio-frequency and low-speed digital signal conditioning.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in PNP switch designs.
IC (DC) −150 mA - Continuous collector current rating; sets maximum load drive capability in active mode.
hFE 180–390 at IC = −1 mA, VCE = −6 V - Confirmed DC current gain range for 2PA1774R variant; enables predictable base drive sizing.
VCE(sat) ≤ −200 mV at IC = −50 mA, IB = −5 mA - Low saturation voltage ensures minimal power loss and heat generation in switching applications.
fT ≥100 MHz - Minimum transition frequency; supports stable small-signal amplification up to mid-VHF band.
Cc 2.2 pF at VCB = −12 V, f = 1 MHz - Collector capacitance impacts high-frequency response and Miller effect in amplifier stages.
Ptot 150 mW at Tamb ≤ 25 °C - Total power dissipation limit; requires derating above 25 °C ambient per Rth(j-a) = 833 K/W.

Pinout & Package

SOT416 (SC-75) plastic surface-mounted package: ultra-small outline, 3-lead, single-row, lead pitch 0.95 mm, body size 1.7 × 0.9 × 0.5 mm.

Pin/Terminal Circuit Role Design Meaning
1 Base Control terminal; forward-biased with negative voltage relative to emitter to turn on PNP conduction path.
2 Emiter Current source terminal; connected to higher potential rail in PNP switch configurations.
3 Collector Current sink terminal; delivers load current to ground or lower-potential node when device is active.

Key Features

Feature Design Value
Low-voltage PNP structure Rated for −50 V VCEO and −60 V VCBO, enabling use in 3.3 V/5 V logic-level interface and battery-powered systems.
High DC current gain bin hFE = 180–390 (2PA1774R), tighter than Q-grade (120–270) and broader than S-grade (270–560), supporting consistent biasing across production lots.
Low saturation voltage VCE(sat) ≤ −200 mV at −50 mA/−5 mA ensures <10 mW power loss in saturated switching, reducing thermal stress on PCB traces.
Ultra-small footprint SOT416 package occupies <1.6 mm² board area, suitable for space-constrained portable electronics and wearable sensor nodes.

Applications

Audio Signal Switching EDP Peripheral Control

Use Scenario: Routing analog audio signals between multiple input sources (e.g., microphone, line-in) in portable media players using discrete transistor switches.

IC Role / Device Role / Timing Role: PNP transistor configured as an emitter-follower or common-emitter switch to enable/disable signal paths without loading source impedance.

Use Value: −200 mV VCE(sat) minimizes insertion loss and distortion; 180–390 hFE ensures reliable turn-on with microcontroller GPIO drive.

Use Scenario: Controlling LED status indicators and reset lines for USB peripherals in desktop and laptop docking stations.

IC Role / Device Role / Timing Role: Low-side or high-side switch driving indicator LEDs or pull-up/pull-down networks on communication bus lines.

Use Value: −150 mA IC rating supports multi-LED strings; SOT416 package allows dense placement near connectors and controllers.

Consumer Remote Control Logic Low-Power Sensor Interface

Use Scenario: Level-shifting and signal inversion for IR receiver output stages interfacing with 3.3 V microcontrollers in universal remotes.

IC Role / Device Role / Timing Role: Inverting amplifier or digital buffer stage converting open-collector IR demodulator outputs to clean logic levels.

Use Value: 100 MHz fT preserves pulse fidelity of 38 kHz carrier-demodulated signals; −6 V VEB rating accommodates standard logic swing margins.

Use Scenario: Enabling/disabling analog sensor biasing networks (e.g., thermistor dividers, photodiode transimpedance feedback paths) in battery-operated IoT nodes.

IC Role / Device Role / Timing Role: Power-gating transistor isolating sensor subcircuits during sleep mode to reduce quiescent current.

Use Value: ICBO ≤ −100 nA at 25 °C ensures <100 nA leakage-induced offset error; 150 mW Ptot permits sustained operation at 2.5 V supply.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
2PA1774S Higher hFE (270–560) and same package; otherwise identical absolute max ratings and characteristics. Better suited for high-gain analog amplification where precise bias stability is critical; less tolerant of base drive variation. Select 2PA1774S when gain consistency >180 is required; 2PA1774R offers wider margin for base resistor tolerance in switching designs.
BC807-16 Same SOT23 package (not SOT416); hFE = 100–250; VCEO = −45 V; Ptot = 310 mW; larger footprint and different pinout (1=emitter, 2=base, 3=collector). Higher power handling but incompatible pin mapping and board layout; requires redesign for drop-in replacement. Choose BC807-16 only if higher power dissipation or legacy SOT23 compatibility is mandatory; not a pin-compatible alternative to 2PA1774R.

Compared with 2PA1774S and BC807-16, the 2PA1774R delivers optimal balance of gain range (180–390), ultra-compact SOT416 footprint, and proven −200 mV saturation performance - making it preferred for space-constrained, low-power switching where moderate gain stability is sufficient.

Availability

2PA1774R is available at Aetrix Electronics and suitable for consumer audio routing, EDP peripheral control, remote control logic, and low-power sensor interface applications requiring stable component supply and long-term industrial availability.

Supply support for 2PA1774R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business, with focus on automotive, industrial, computing, consumer, and wearable markets.

The 2PA1774R belongs to Nexperia's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, space-constrained switching and amplification tasks in consumer and computing end-equipment.

FAQ

What is the maximum collector-emitter voltage rating for the 2PA1774R?

The 2PA1774R has a maximum collector-emitter voltage (VCEO) rating of −50 V with the base open, as specified in Table 4 of the official Nexperia data sheet (Rev. 05, 17 November 2009). This rating defines the upper limit for safe DC operation in PNP switch configurations and must not be exceeded to prevent avalanche breakdown. The 2PA1774R also supports −60 V VCBO (collector-base) under open-emitter conditions.

What is the DC current gain (hFE) range for the 2PA1774R at typical operating conditions?

The 2PA1774R exhibits a DC current gain (hFE) range of 180 to 390 when measured at IC = −1 mA and VCE = −6 V, per Table 6 in the official data sheet. This binning distinguishes it from the 2PA1774Q (120–270) and 2PA1774S (270–560) variants. The 2PA1774R's gain window supports robust base resistor design for both switching and linear amplification uses.

Is the 2PA1774R pin-compatible with the NPN complement 2PC4617?

No, the 2PA1774R and 2PC4617 are complementary PNP/NPN transistors but not pin-compatible. The 2PA1774R uses pinout 1=base, 2=emitter, 3=collector in SOT416, while the 2PC4617 follows the same physical pinout but opposite polarity - meaning direct substitution would reverse circuit functionality. Layout reuse requires intentional polarity-aware redesign, not mechanical replacement.

What is the thermal resistance from junction to ambient (Rth(j-a)) for the 2PA1774R on a standard FR4 PCB?

The thermal resistance from junction to ambient (Rth(j-a)) for the 2PA1774R is 833 K/W when mounted on a single-sided FR4 PCB with tin-plated copper, as stated in Table 5 of the data sheet. This value assumes standard footprint and no thermal vias or copper pours. At 25 °C ambient, the 150 mW Ptot rating implies a maximum junction temperature rise of 125 °C - reaching the 150 °C absolute limit.

Does the 2PA1774R have a specified transition frequency (fT) and what does it indicate for circuit design?

Yes, the 2PA1774R has a minimum transition frequency (fT) of 100 MHz, measured at IE = −2 mA, VCE = −12 V, and f = 100 MHz (Table 6). This parameter indicates the frequency at which current gain drops to unity, confirming suitability for audio amplification, IR signal buffering, and low-speed digital edge sharpening - but not RF or high-speed switching above ~10 MHz.

2PA1774R,135 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SC-75, SOT-416
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
150 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 1mA, 6V
Power - Max:
150 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-75

2PA1774R,135 FAQ

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6.How does Aetrix verify that 2PA1774R,135 is sourced from the original manufacturer or authorized distributors?

All 2PA1774R,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2PA1774R,135 meets industry standards.

7.What is the process for return or replacement of 2PA1774R,135?

All 2PA1774R,135 units undergo pre-shipment inspection (PSI). If there is an issue with 2PA1774R,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2PA1774R,135 part is unused and in its original packaging.

Return procedure for 2PA1774R,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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