Nexperia USA Inc. 2PB1219AQ,135
- Part No.:
- 2PB1219AQ,135
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
2PB1219AQ,135.pdf
- Description:
- TRANS PNP 50V 0.5A SOT-323
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
2PB1219AQ,135 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT323 (SC-70) package, rated for −50 V VCEO, −500 mA IC, and −600 mV VCEsat at −300 mA/−30 mA drive, used in low-voltage switching and signal amplification circuits in consumer power management and portable electronics.
For engineers reviewing the 2PB1219AQ,135 datasheet, 2PB1219AQ,135 pinout, 2PB1219AQ,135 application, or 2PB1219AQ,135 equivalent, key selection criteria include its verified PNP polarity, guaranteed hFE range of 85–170 at −150 mA/−10 V, fT ≥ 100 MHz, low thermal resistance (625 K/W), and SOT323 footprint compatibility with space-constrained PCB layouts.
Technical Context
This device operates as a medium-current, low-voltage PNP switch with defined saturation behavior: VCEsat ≤ −600 mV at IC = −300 mA and IB = −30 mA, and VBEsat ≤ −1.5 V under same conditions. Its DC current gain is binned per suffix (Q/R/S), with 2PB1219AQ specified for hFE = 85–170 at −150 mA/−10 V.
Thermal performance is characterized by Rth j-a = 625 K/W under standard SOT323 mounting, and it supports operation from −65 °C to +150 °C ambient. The device exhibits Cc = 15 pF at VCB = −10 V and f = 1 MHz, enabling use in moderate-frequency switching up to ~100 MHz fT.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter voltage with base open; defines upper rail limit in PNP high-side switch designs. |
| IC (DC) | −500 mA: Continuous collector current rating; supports load switching up to ~0.5 A in compact SOT323 packages. |
| VCEsat | ≤ −600 mV @ −300 mA/−30 mA: Low saturation voltage minimizes conduction loss and heat generation in linear or saturated switching modes. |
| hFE | 85–170 @ −150 mA/−10 V: Confirmed DC current gain range ensures predictable base drive requirements for reliable turn-on. |
| fT | ≥ 100 MHz: Transition frequency enables stable small-signal amplification and fast digital switching up to tens of MHz. |
| Rth j-a | 625 K/W: Junction-to-ambient thermal resistance under standard SOT323 mounting; informs derating curves for power dissipation. |
| Cc | 15 pF @ VCB = −10 V, 1 MHz: Collector capacitance impacts high-frequency response and switching speed in RF or fast-switching applications. |
Pinout & Package
SOT323 (SC-70) plastic surface-mount package: 3-lead, single-ended, ultra-small outline (2.2 mm × 1.35 mm × 0.95 mm max height), optimized for automated placement and high-density PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal; requires negative bias relative to emitter to forward-bias BE junction and enable conduction. |
| 2 | Emiter | Current source terminal in PNP configuration; connected to higher potential rail in high-side switch topologies. |
| 3 | Collector | Current sink terminal; delivers controlled output current to load referenced to lower potential (e.g., ground). |
Key Features
| Feature | Design Value |
|---|---|
| High current capability | Rated for −500 mA DC collector current-supports robust load switching without external heatsinking in SOT323. |
| Low saturation voltage | VCEsat ≤ −600 mV ensures <180 mW conduction loss at −300 mA, reducing thermal stress in battery-powered systems. |
| Binned DC current gain | hFE = 85–170 (2PB1219AQ) enables precise base resistor selection for consistent turn-on across production lots. |
| High transition frequency | fT ≥ 100 MHz allows use in audio preamplifiers, oscillator stages, and >10 MHz digital logic interface buffering. |
Applications
| Portable Power Switching | LED Driver Control |
|---|---|
Use Scenario: Enabling/disabling 3.3 V or 5 V rails in handheld devices using PNP high-side configuration. IC Role / Device Role / Timing Role: PNP switch controlling power delivery path with fast turn-off via base pull-up. Use Value: Low VCEsat limits dropout voltage and extends battery life; SOT323 footprint saves board area in compact designs. | Use Scenario: Constant-current sinking for indicator LEDs in wearables and IoT edge nodes. IC Role / Device Role / Timing Role: Linear current regulator with emitter resistor feedback, leveraging stable hFE for accuracy. Use Value: Guaranteed hFE binning (85–170) ensures predictable LED brightness across units without trimming. |
| Audio Signal Amplification | Logic Level Translation |
Use Scenario: Low-noise preamplifier stage for microphone or sensor signals in consumer audio codecs. IC Role / Device Role / Timing Role: Common-emitter amplifier biased in active region with fT ≥ 100 MHz supporting wideband response. Use Value: 15 pF collector capacitance and high fT preserve signal integrity up to 10 MHz, suitable for full-audio bandwidth. | Use Scenario: Bidirectional level shifting between 1.8 V microcontroller GPIO and 3.3 V peripheral interfaces. IC Role / Device Role / Timing Role: Inverting translator using PNP-based open-collector topology with pull-up resistors. Use Value: Verified −50 V VCEO and −5 V VEBO tolerate voltage transients during hot-plug events without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3906 | Same SOT23 package; hFE = 100–300 (wider spread); VCEsat = −400 mV @ −50 mA (lower current test point) | Optimized for low-base-drive logic switching; less suited for >200 mA loads due to higher Rth j-a (625 vs. 500 K/W typical) | Select when base drive is limited and load current ≤100 mA; verify thermal margin at full IC. |
| BC807-40 | SOT323 package; hFE = 250–630 (higher gain); VCEsat = −700 mV @ −500 mA (slightly higher loss) | Designed for higher-gain analog amplification; tighter hFE tolerance but higher VCEsat at full rating | Prefer for linear gain-critical stages; avoid where <600 mV saturation voltage is mandatory for efficiency. |
Compared with MMBT3906 and BC807-40, the 2PB1219AQ,135 offers the narrowest hFE bin (85–170) and lowest VCEsat at high current, making it optimal for deterministic high-side switching where thermal and drive consistency are critical.
Availability
2PB1219AQ,135 is available at Aetrix Electronics and suitable for portable power switching, LED driver control, and audio signal amplification requiring stable component supply, long-term obsolescence resilience, and RoHS-compliant SMT packaging.
Supply support for 2PB1219AQ,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017, with core expertise in high-volume, automotive-qualified, and industrial-grade silicon.
The 2PB1219AQ,135 belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-sensitive, space-constrained applications demanding reliability, tight parameter binning, and seamless SOT323 integration.
FAQ
Is the 2PB1219AQ,135 pin-compatible with the NPN complement 2PD1820A?
No. The 2PB1219AQ,135 is a PNP transistor with pinout Base–Emitter–Collector (1–2–3), while the 2PD1820A is an NPN device with identical SOT323 mechanical footprint but reversed polarity and complementary electrical behavior. Direct substitution requires circuit redesign to accommodate PNP vs. NPN biasing and current flow direction.
What is the maximum allowable power dissipation at 70 °C ambient temperature?
At Tamb = 70 °C, the maximum allowable power dissipation is 120 mW. This is calculated using Ptot(Tamb) = Ptot(25 °C) × [1 − (Tamb − 25)/Rth j-a × ΔT], yielding 200 mW × [1 − (70 − 25)/625] = 120 mW, assuming no PCB copper area enhancement.
Does the 'Q' suffix indicate tape-and-reel packaging or electrical binning?
The 'Q' suffix denotes electrical binning: hFE = 85–170 at −150 mA/−10 V and fT ≥ 100 MHz. Packaging is standardized as 3,000 pcs per 8 mm tape (EIA-481 compliant), indicated separately by the ,135 suffix per JEDEC standards-not by the Q code.
Can the 2PB1219AQ,135 be used in avalanche mode for transient protection?
No. The device is not rated or characterized for avalanche energy handling. Its absolute maximum VCBO = −60 V and non-repetitive peak ratings are not specified for avalanche operation. Use dedicated TVS diodes or Zener-clamped configurations for overvoltage protection instead.
2PB1219AQ,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 85 @ 150mA, 10V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
2PB1219AQ,135 FAQ
1.How can I place an order for 2PB1219AQ,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2PB1219AQ,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2PB1219AQ,135 reliable?
The price and inventory of 2PB1219AQ,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2PB1219AQ,135 is usually 5 days.
3.What payment methods are accepted for 2PB1219AQ,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2PB1219AQ,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2PB1219AQ,135?
2PB1219AQ,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2PB1219AQ,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2PB1219AQ,135?
For technical support, including 2PB1219AQ,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2PB1219AQ,135 requirements.
6.How does Aetrix verify that 2PB1219AQ,135 is sourced from the original manufacturer or authorized distributors?
All 2PB1219AQ,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2PB1219AQ,135 meets industry standards.
7.What is the process for return or replacement of 2PB1219AQ,135?
All 2PB1219AQ,135 units undergo pre-shipment inspection (PSI). If there is an issue with 2PB1219AQ,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2PB1219AQ,135 part is unused and in its original packaging.
Return procedure for 2PB1219AQ,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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