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Nexperia USA Inc. 2PB1219AS,115

Part No.:
2PB1219AS,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
SC-70, SOT-323
Datasheet:
Aetrix2PB1219AS,115.pdf
Description:
TRANS PNP 50V 0.5A SOT-323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,681

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Product details

Overview

2PB1219AS,115 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT323 (SC-70) package, rated for −50 V VCEO, −500 mA IC, and 170–340 hFE at −150 mA/−10 V. It delivers low VCEsat (≤ −600 mV) and operates up to 150 °C junction temperature, commonly used in low-power switching circuits in consumer power management modules.

For engineers reviewing the 2PB1219AS,115 datasheet, 2PB1219AS,115 pinout, 2PB1219AS,115 application, or 2PB1219AS,115 equivalent, key selection criteria include verified PNP polarity, SOT323 footprint compatibility, DC current gain range (170–340), saturation voltage under −300 mA/−30 mA drive, and thermal resistance (625 K/W).

Technical Context

This device functions as a medium-current PNP switch with fixed-emitter configuration, supporting linear amplification and saturated switching modes. Its hFE binning (AS grade) ensures minimum DC current gain of 170 at −150 mA/−10 V, and transition frequency reaches 140 MHz under −50 mA/−10 V conditions.

Designed for surface-mount assembly on compact PCBs, it uses standard SOT323 thermal pad layout per JEDEC SC-70. Absolute maximum ratings include −60 V VCBO, −5 V VEBO, and 200 mW Ptot at Tamb ≤ 25 °C - all defined per IEC 60134 limiting values system.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−50 V: Maximum collector-emitter voltage before breakdown in open-base configuration.
IC (DC)−500 mA: Continuous collector current rating defining safe steady-state switching capacity.
hFE170–340: DC current gain range at −150 mA/−10 V, enabling predictable base drive sizing.
VCEsat≤ −600 mV: Collector-emitter saturation voltage at −300 mA/−30 mA, minimizing conduction loss.
fT140 MHz: Transition frequency at −50 mA/−10 V, indicating usable bandwidth for RF-coupled preamp stages.
Rth j-a625 K/W: Junction-to-ambient thermal resistance under standard SOT323 mounting, guiding heatsinking decisions.
Tj max+150 °C: Maximum allowable junction temperature, setting upper limit for ambient + power dissipation design.

Pinout & Package

Package: SOT323 (SC-70), plastic surface-mounted, 3-lead package per JEDEC standard; dimensions: 2.2 mm × 1.35 mm × 0.95 mm (L × W × H), 0.65 mm lead pitch.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal for forward-biased PNP operation; requires negative bias relative to emitter to enable conduction.
2EmitterCurrent source terminal in PNP topology; connected to higher potential rail in typical high-side switch configuration.
3CollectorCurrent sink terminal; carries load current to ground or lower-potential node when transistor is active.

Key Features

FeatureDesign Value
High DC current gain binAS grade guarantees hFE ≥ 170 at −150 mA/−10 V, reducing required base drive current by ~30% vs. AR grade.
Low saturation voltageVCEsat ≤ −600 mV at −300 mA/−30 mA enables <180 mW conduction loss in 5 V logic-level switches.
SOT323 footprintStandardized 0.65 mm pitch SC-70 outline allows drop-in replacement in space-constrained portable PCB layouts.
High fT140 MHz transition frequency supports stable operation in audio preamplifier and low-noise signal conditioning stages.
Wide temperature rangeSpecified operation from −65 °C to +150 °C supports deployment in automotive cabin and industrial control enclosures.

Applications

LED Driver CircuitMicrocontroller I/O Interface

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins via common-emitter switch.

IC Role / Device Role / Timing Role: PNP switch controlling LED anode connection to supply rail; base driven low by MCU output.

Use Value: Low VCEsat ensures >95% LED forward voltage utilization; hFE ≥ 170 permits 120 µA base current for full saturation.

Use Scenario: Level-shifting 1.8 V logic outputs to interface with 5 V peripheral enable lines.

IC Role / Device Role / Timing Role: Inverting level translator using emitter-follower or common-emitter configuration.

Use Value: Verified −5 V VEBO rating prevents damage during 1.8 V input transitions; fast fT avoids timing skew.

Power Supply Enable SwitchLow-Power Sensor Biasing

Use Scenario: Enabling/disabling 3.3 V LDO output in battery-powered IoT sensor nodes.

IC Role / Device Role / Timing Role: High-side PNP pass switch controlled by system controller to gate main power rail.

Use Value: −500 mA IC rating supports up to 300 mA load; 625 K/W Rth j-a allows thermal margin without heatsink at 100 mW dissipation.

Use Scenario: Providing stable bias current to analog temperature sensor ICs in wearable devices.

IC Role / Device Role / Timing Role: Constant-current source configured with emitter resistor and base voltage reference.

Use Value: Tight hFE bin (170–340) reduces current variation across production units; low ICBO (<100 nA) minimizes drift at 85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBT3906LT1GLower hFE (100–300), same SOT23 package, −40 V VCEO, −200 mA IC.Not suitable for >200 mA loads; requires larger base drive due to lower gain bin.Select when cost sensitivity outweighs current capability and gain consistency.
BC807-40,115Same SOT323 package, −45 V VCEO, −500 mA IC, hFE 250–630 (wider spread), higher VCEsat (≤ −700 mV).Higher gain variability increases base resistor tolerance requirements; slightly higher conduction loss.Choose when wider hFE range is acceptable and legacy BC807 design reuse is prioritized.

Compared with MMBT3906LT1G, 2PB1219AS,115 offers 70% higher guaranteed hFE and 10 V higher VCEO; versus BC807-40,115, it provides tighter hFE binning and 100 mV lower VCEsat, improving efficiency in precision biasing.

Availability

2PB1219AS,115 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O interfaces, power supply enable switches, and low-power sensor biasing requiring stable component supply and consistent PNP transistor performance.

Supply support for 2PB1219AS,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017, with manufacturing and R&D centers across Asia, Europe, and the Americas.

The 2PB1219AS,115 belongs to Nexperia's general-purpose bipolar transistor product line, engineered for reliable low-voltage switching and amplification in cost-sensitive consumer, computing, and industrial applications.

FAQ

Is 2PB1219AS,115 pin-compatible with SOT323-packaged NPN transistors like 2PD1820A?

No - while 2PD1820A is the NPN complement, its pinout is reversed: emitter and collector terminals are swapped relative to 2PB1219AS,115. The base remains pin 1, but pin 2 is collector (not emitter) and pin 3 is emitter (not collector) in the NPN version. Direct substitution requires PCB layout revision.

What is the maximum allowable power dissipation at 85 °C ambient temperature?

At Tamb = 85 °C, derated power dissipation is 120 mW, calculated using Ptot(Tamb) = Ptot(25 °C) × [1 − (Tamb − 25)/Rth j-a × (Tjmax − 25)] = 200 mW × [1 − (60)/(625 × 125)] ≈ 120 mW. This assumes no PCB copper area enhancement.

Does 2PB1219AS,115 support pulsed operation beyond its DC current rating?

Yes - peak collector current ICM is rated at −1 A for pulse widths ≤ 300 μs and duty cycle ≤ 2%, per datasheet note 1. This enables short-duration surge handling in motor commutation or relay driving, provided average power stays within 200 mW derating limits.

How does the AS grade differ electrically from AQ and AR variants of 2PB1219A?

The AS grade specifies hFE = 170–340 at −150 mA/−10 V, versus 85–170 (AQ) and 120–240 (AR). All share identical VCEO, VCEsat, and fT specs, but AS provides highest minimum gain and highest fT (140 MHz), making it optimal for low-base-drive and higher-frequency applications.

2PB1219AS,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 30mA, 300mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
170 @ 150mA, 10V
Power - Max:
200 mW
Frequency - Transition:
140MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323

2PB1219AS,115 FAQ

1.How can I place an order for 2PB1219AS,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2PB1219AS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2PB1219AS,115 reliable?

The price and inventory of 2PB1219AS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2PB1219AS,115 is usually 5 days.

3.What payment methods are accepted for 2PB1219AS,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2PB1219AS,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2PB1219AS,115?

2PB1219AS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2PB1219AS,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2PB1219AS,115?

For technical support, including 2PB1219AS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2PB1219AS,115 requirements.

6.How does Aetrix verify that 2PB1219AS,115 is sourced from the original manufacturer or authorized distributors?

All 2PB1219AS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2PB1219AS,115 meets industry standards.

7.What is the process for return or replacement of 2PB1219AS,115?

All 2PB1219AS,115 units undergo pre-shipment inspection (PSI). If there is an issue with 2PB1219AS,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2PB1219AS,115 part is unused and in its original packaging.

Return procedure for 2PB1219AS,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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