Nexperia USA Inc. 2PB1219AS,135

Overview

2PB1219AS,135 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT323 (SC-70) package, rated for −50 V V_CEO, −500 mA I_C, and 170–340 h_FE at −150 mA/−10 V. It delivers low V_CEsat (≤ −600 mV) and high f_T (140 MHz), enabling efficient switching and amplification in compact DC-DC feedback paths and load control circuits.

For engineers reviewing the 2PB1219AS,135 datasheet, 2PB1219AS,135 pinout, 2PB1219AS,135 application, or 2PB1219AS,135 equivalent, this page provides verified package mapping, validated current gain bins, saturation voltage behavior under −300 mA/−30 mA drive, thermal resistance (625 K/W), and confirmed PNP complement pairing with 2PD1820A.

Technical Context

This device operates as a medium-current, medium-voltage PNP switch or linear amplifier with fixed emitter-base and collector-base junction topology. Its h_FE binning (170–340) ensures predictable DC bias stability across production lots, while the 140 MHz f_T supports signal amplification up to mid-VHF range under −50 V/−500 mA conditions.

The SOT323 package imposes strict thermal limits: P_tot = 200 mW at T_amb ≤ 25 °C, with R_{th j-a} = 625 K/W. Saturation is defined at −300 mA collector current with −30 mA base drive, yielding ≤ −600 mV V_CEsat and ≤ −1.5 V V_BEsat, confirming suitability for low-loss active-low switching.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package: 1.35 mm × 1.15 mm footprint, 0.95 mm height, 3-terminal leadframe with gull-wing leads. Thermal pad not present; mounting requires standard reflow profile for plastic SMD packages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with 2PB1219AR,135, the 2PB1219AS,135 offers +25% higher minimum h_FE and +17% higher f_T, improving bias stability and small-signal fidelity; versus MMBT3906LT1G, it trades SOT23 compatibility for +25% higher V_CEO and tighter h_FE distribution at high current.

Availability

2PB1219AS,135 is available at Aetrix Electronics and suitable for LED driver circuits, DC-DC converter feedback loops, and active-low load switches requiring stable component supply, consistent h_FE binning, and SOT323 space efficiency.

Supply support for 2PB1219AS,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete semiconductors, spun off from NXP in 2017, specializing in high-volume, high-reliability PNP/NPN transistors, MOSFETs, and logic devices for automotive and industrial markets.

The 2PB1219AS,135 belongs to Nexperia's general-purpose bipolar transistor product line, engineered for robust DC switching and linear amplification in cost-sensitive, space-constrained applications where predictable gain and low saturation loss are essential.

FAQ

What is the guaranteed h_FE range for 2PB1219AS,135 at −150 mA and −10 V?

The datasheet specifies h_FE = 170 to 340 under those exact conditions. This binning is tested and guaranteed per unit, ensuring design margin for base resistor calculations without derating. No statistical distribution or typical value is substituted-only the min/max bounds apply for worst-case analysis.

Can 2PB1219AS,135 replace 2PB1219AQ,135 in a design?

Yes, but only if the higher h_FE (170–340 vs. 85–170) and f_T (140 MHz vs. 100 MHz) do not cause instability in feedback loops or excessive base current in existing bias networks. The absolute maximum ratings and pinout are identical; no layout change is needed.

Is the SOT323 package of 2PB1219AS,135 RoHS-compliant and lead-free?

Yes. Nexperia confirms all SOT323-packaged 2PB1219A variants, including 2PB1219AS,135, meet RoHS Directive 2011/65/EU and are lead-free with matte tin termination. The "135" suffix denotes tape-and-reel packaging compliant with EIA-481-D standards.

What is the maximum allowable continuous power dissipation at 70 °C ambient?

At T_amb = 70 °C, derating applies linearly from 200 mW at 25 °C using R_{th j-a} = 625 K/W. Junction temperature must stay ≤ 150 °C, so max P_tot = (150 − 70) / 625 = 128 mW. This is the hard thermal limit-not a recommendation-and assumes no board-level heatsinking.