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NXP Semiconductors 2PB709AQ,115

Part No.:
2PB709AQ,115
Manufacturer:
NXP Semiconductors
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
Aetrix2PB709AQ,115.pdf
Description:
TRANS PNP 45V 0.1A SMT3 MPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,066

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Product details

Overview

2PB709AQ,115 from Nexperia is a PNP general purpose bipolar junction transistor in SC-59 (SOT346) package, rated for −45 V VCEO, −100 mA IC, and 250 mW Ptot, with DC current gain hFE of 160–260 at IC = −2 mA and VCE = −10 V. It serves as a low-voltage, low-current switching or amplification device in discrete logic interfaces and signal conditioning circuits.

For engineers reviewing the 2PB709AQ,115 datasheet, 2PB709AQ,115 pinout, 2PB709AQ,115 application, or 2PB709AQ,115 equivalent, key selection considerations include its PNP polarity, SC-59 thermal resistance (500 K/W), VCEsat ≤ −500 mV at IC = −100 mA/IB = −10 mA, fT = 60 MHz, and complementarity to NPN 2PB601A.

Technical Context

This PNP BJT operates in active or saturation mode for linear amplification or digital switching. Its design supports low-power, low-frequency signal control with verified cutoff currents (ICBO ≤ −10 nA at Tj = 25 °C) and stable gain across temperature.

The device uses silicon planar epitaxial construction, mounted on FR4 PCB per IEC 134 limiting values, with thermal resistance Rth j-a = 500 K/W defining its power derating envelope up to Tamb = +150 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−45 V - maximum safe collector-emitter voltage under open-base condition; defines off-state blocking capability
IC (DC)−100 mA - continuous collector current limit; sets max load drive capacity in switching applications
hFE160–260 - DC current gain at IC = −2 mA/VCE = −10 V; determines base drive requirements for saturation
VCEsat≤ −500 mV - collector-emitter saturation voltage at IC = −100 mA/IB = −10 mA; impacts conduction loss and logic-level compatibility
fT60 MHz - transition frequency at IC = −1 mA/VCE = −10 V; indicates usable bandwidth for small-signal amplification
Ptot250 mW - total power dissipation at Tamb ≤ 25 °C; defines thermal headroom before derating begins
Rth j-a500 K/W - junction-to-ambient thermal resistance on FR4 board; governs temperature rise under load

Pinout & Package

2PB709AQ,115 is housed in SC-59 (SOT346), a plastic surface-mounted package with 3 leads and dimensions per IEC/JEDEC standards (D = 3.1 mm, E = 2.7 mm, Lp = 1.3 mm).

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal; reverse-biased to turn on PNP device; requires current sink for activation
2EmiterCurrent source terminal; connected to higher potential rail in typical common-emitter switch configuration
3CollectorCurrent sink terminal; delivers load current to ground or lower-potential node when saturated

Key Features

FeatureDesign Value
Low-voltage PNP operationRated for −45 V VCEO; suitable for 3.3 V/5 V logic-level interface and battery-powered systems
Controlled DC current gainhFE = 160–260 ensures predictable base drive sizing without overdesign or marginal biasing
Low saturation voltageVCEsat ≤ −500 mV minimizes power loss and enables clean TTL/CMOS-compatible output levels
SC-59 package thermal performanceRth j-a = 500 K/W on FR4 allows reliable operation up to +150 °C ambient with no heatsink

Applications

LED Driver CircuitLevel-Shifting Interface

Use Scenario: Driving low-current indicator LEDs from microcontroller GPIO pins operating at 3.3 V or 5 V.

IC Role / Device Role / Timing Role: PNP switch controlling LED anode connection to supply rail; emitter-follower or common-emitter topology.

Use Value: Low VCEsat ensures minimal voltage drop across transistor, preserving forward voltage margin for red/green/yellow LEDs.

Use Scenario: Translating logic-high signals from a 5 V MCU to a 12 V peripheral input requiring active-low enable.

IC Role / Device Role / Timing Role: Inverting level shifter with PNP pull-up; base driven by MCU output, collector tied to 12 V via load resistor.

Use Value: Verified hFE range enables robust drive with standard 10 kΩ base resistor; fT > 60 MHz supports fast edge transitions.

Discrete Logic InverterLow-Power Sensor Signal Amplifier

Use Scenario: Constructing non-inverting or inverting gates in legacy analog-digital hybrid systems where IC logic is unavailable or undesirable.

IC Role / Device Role / Timing Role: Common-emitter amplifier configured as digital inverter; biased into saturation/cutoff by resistor network.

Use Value: Tight VCEO/VCB ratings prevent breakdown during rail transients; low ICBO (< −10 nA) maintains high off-state impedance.

Use Scenario: Amplifying weak DC-coupled sensor outputs (e.g., thermistor divider, photodiode current) in portable instrumentation.

IC Role / Device Role / Timing Role: Single-stage common-emitter amplifier with emitter degeneration for linearity and stability.

Use Value: Stable hFE across temperature and low noise characteristics support accurate low-level analog gain without added complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
2PB709AR,115Higher hFE (210–340) and fT (70 MHz); same package, voltage, and current ratingsBetter suited for higher-gain amplification or faster switching where tighter base drive control is neededSelect 2PB709AR,115 when gain consistency or bandwidth exceeds requirements of 2PB709AQ,115
MMBT3906LT1GSOT-23 package; hFE = 100–300; VCEO = −40 V; Ptot = 310 mW; slightly higher power rating but lower voltage marginCompatible in low-voltage logic switching but not direct replacement due to different pinout and package footprintChoose MMBT3906LT1G only if SOT-23 layout is fixed and −40 V rating suffices for system rail conditions

Compared with 2PB709AR,115 and MMBT3906LT1G, the 2PB709AQ,115 offers the lowest hFE and fT in its family-ideal for cost-sensitive, moderate-speed switching where predictable, conservative gain simplifies bias design and reduces risk of unintended oscillation.

Availability

2PB709AQ,115 is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, discrete logic inverters, and low-power sensor signal amplifiers requiring stable component supply and long-term industrial availability.

Supply support for 2PB709AQ,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in high-volume production of discrete semiconductors, logic devices, and PowerMOS transistors, spun off from NXP in 2017.

The 2PB709AQ,115 belongs to Nexperia's general-purpose bipolar transistor product line, engineered for reliability and consistency in cost-sensitive consumer, computing, and industrial signal control applications.

FAQ

What is the pin configuration of the 2PB709AQ,115?

The 2PB709AQ,115 uses SC-59 (SOT346) package with pin 1 = Base, pin 2 = Emitter, and pin 3 = Collector, as confirmed in the official Nexperia data sheet. This pinout is standardized across the 2PB709A series and differs from SOT-23 or TO-92 layouts. Always verify orientation using the marking code "BQ" and top-view diagram before PCB layout.

What is the maximum collector-emitter voltage rating for the 2PB709AQ,115?

The 2PB709AQ,115 has a maximum collector-emitter voltage (VCEO) rating of −45 V under open-base conditions, per IEC 134 Absolute Maximum Ratings. This rating applies at Tamb ≤ 25 °C and must be derated linearly above that temperature using the specified thermal resistance of 500 K/W.

Does the 2PB709AQ,115 have a documented NPN complement?

Yes-the NPN complement to the 2PB709AQ,115 is the 2PB601A, explicitly stated in the Nexperia data sheet. Both share matching voltage, current, and package specifications, enabling balanced design of push-pull or complementary switching stages in discrete analog and power control circuits.

What is the DC current gain (hFE) range for the 2PB709AQ,115?

The 2PB709AQ,115 exhibits a DC current gain (hFE) range of 160 to 260 when measured at IC = −2 mA and VCE = −10 V, Tamb = 25 °C. This gain band is binned and marked as "BQ"; other variants (e.g., BR, BS) offer higher hFE ranges but identical package and absolute ratings.

Can the 2PB709AQ,115 be used in automotive applications?

The 2PB709AQ,115 is not qualified to AEC-Q101 or automotive-grade reliability standards. While it operates across −65 °C to +150 °C ambient and meets industrial thermal limits, Nexperia documentation explicitly excludes medical, military, aircraft, space, and life-support use-and does not list automotive qualification for this part. For automotive designs, consult Nexperia's AEC-Q101-certified PNP transistors instead of the 2PB709AQ,115.

2PB709AQ,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
45 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 2mA, 10V
Power - Max:
250 mW
Frequency - Transition:
60MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SMT3; MPAK

2PB709AQ,115 FAQ

1.How can I place an order for 2PB709AQ,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2PB709AQ,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2PB709AQ,115 reliable?

The price and inventory of 2PB709AQ,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2PB709AQ,115 is usually 5 days.

3.What payment methods are accepted for 2PB709AQ,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2PB709AQ,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2PB709AQ,115?

2PB709AQ,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2PB709AQ,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2PB709AQ,115?

For technical support, including 2PB709AQ,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2PB709AQ,115 requirements.

6.How does Aetrix verify that 2PB709AQ,115 is sourced from the original manufacturer or authorized distributors?

All 2PB709AQ,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2PB709AQ,115 meets industry standards.

7.What is the process for return or replacement of 2PB709AQ,115?

All 2PB709AQ,115 units undergo pre-shipment inspection (PSI). If there is an issue with 2PB709AQ,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2PB709AQ,115 part is unused and in its original packaging.

Return procedure for 2PB709AQ,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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