NXP Semiconductors 2PB709AQW,115

Overview

2PB709AQW from Nexperia is a PNP general purpose bipolar junction transistor in SC-70 (SOT323) package, rated for −45 V V_CEO, −100 mA I_C, and 200 mW P_tot, with DC current gain h_FE of 160–260 at I_C = −2 mA and V_CE = −10 V, used in low-power switching and amplification circuits.

For engineers reviewing the 2PB709AQW datasheet, 2PB709AQW pinout, 2PB709AQW application, or 2PB709AQW equivalent, key selection considerations include its PNP polarity, SOT323 footprint compatibility, −500 mV V_CEsat at −100 mA/−10 mA drive, 60 MHz f_T, and thermal resistance R_{th j-a} of 625 K/W.

Technical Context

This device operates as a medium-speed, low-voltage PNP BJT optimized for discrete switching and linear amplification in space-constrained designs. Its −45 V breakdown ratings and −6 V V_EB0 support operation in rail-to-rail analog stages and logic-level interface circuits.

The 2PB709AQW exhibits defined gain binning (160–260 h_FE) and frequency response (f_T = 60 MHz), distinguishing it from higher-gain variants 2PB709ARW and 2PB709ASW. It shares pinout and package with its NPN complement 2PD601AW, enabling complementary pair design.

Key Specifications

Pinout & Package

Package: SC-70 (SOT323), plastic surface-mounted, 3-lead package with 0.65 mm lead pitch and 2.2 mm × 1.35 mm body size.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general purpose transistor applications.

Compared with 2PB709ARW and MMBT3906, the 2PB709AQW delivers balanced gain, speed, and thermal performance in the smallest footprint, making it optimal for cost-sensitive, space-constrained designs where moderate h_FE and proven reliability are prioritized over maximum frequency or gain.

Availability

2PB709AQW is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, audio pre-amplifier stages, and power supply enable switches requiring stable component supply and consistent parametric binning.

Supply support for 2PB709AQW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, consumer, and wearable markets.

The 2PB709AQW belongs to Nexperia's general-purpose bipolar transistor product line, designed for reliable, low-cost switching and amplification in compact, high-volume electronic systems.

FAQ

What is the maximum collector-emitter voltage rating for the 2PB709AQW?

The 2PB709AQW has a maximum collector-emitter voltage (V_CEO) rating of −45 V under open-base conditions. This rating defines the upper limit of reverse bias the transistor can withstand between collector and emitter while remaining in the off state. Exceeding this voltage risks avalanche breakdown and permanent damage. The 2PB709AQW must be operated within this limit in all circuit configurations, including transient conditions.

What is the DC current gain (h_FE) range specified for the 2PB709AQW?

The 2PB709AQW is binned for DC current gain (h_FE) between 160 and 260 when measured at I_C = −2 mA and V_CE = −10 V, at T_amb = 25 °C. This gain range is tighter than generic PNP transistors and allows predictable biasing in amplifier and switch applications. The 2PB709AQW does not guarantee gain outside this test condition, and h_FE decreases at higher currents or temperatures.

Is the 2PB709AQW pin-compatible with its NPN complement?

Yes, the 2PB709AQW is pin-compatible with its NPN complement 2PD601AW in the same SOT323 package. Both share identical pin assignments: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This allows direct pairing in push-pull, complementary symmetry, or dual-rail interface circuits without layout changes. However, polarity reversal must be accounted for in schematic design and bias networks.

What is the thermal resistance from junction to ambient (R_{th j-a}) for the 2PB709AQW?

The 2PB709AQW has a thermal resistance from junction to ambient (R_{th j-a}) of 625 K/W under standard mounting conditions on FR-4 PCB with minimal copper. This value assumes no added heatsinking and reflects the device's inherent limitation in dissipating power in compact layouts. To maintain T_j ≤ 150 °C, average power dissipation should remain below ~100 mW at +25 °C ambient, requiring careful thermal design when using the 2PB709AQW near its 200 mW P_tot limit.

Does the 2PB709AQW have a specified transition frequency (f_T)?

Yes, the 2PB709AQW has a specified transition frequency (f_T) of 60 MHz, measured at I_C = −1 mA, V_CE = −10 V, and f = 100 MHz. This parameter indicates the frequency at which current gain drops to unity and confirms suitability for audio-band amplification and sub-MHz digital switching. The 2PB709AQW's f_T is lower than the 2PB709ARW (70 MHz) and 2PB709ASW (80 MHz), reflecting its position as the baseline variant in the family.