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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors 2PB709AR,115

Name: 2PB709AR,115
Brand: NXP Semiconductors
SKU: 2PB709AR,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2PB709AR,115

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2PB709AR,115.pdf

Description:: TRANS PNP 45V 0.1A SMT3 MPAK

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Product details

Overview

2PB709AR,115 from Nexperia is a PNP general purpose bipolar junction transistor in SC-59 (SOT346) package, rated for −45 V V_CEO, −100 mA I_C, and DC current gain (h_FE) of 210–340 at I_C = −2 mA / V_CE = −10 V. It serves as a low-voltage, low-current switching or amplification device in discrete logic interfaces and signal conditioning circuits.

For engineers reviewing the 2PB709AR,115 datasheet, 2PB709AR,115 pinout, 2PB709AR,115 application, or 2PB709AR,115 equivalent, key selection criteria include verified PNP polarity, SC-59 thermal resistance (500 K/W), guaranteed h_FE range, V_CEsat ≤ −500 mV at I_C = −100 mA, and compatibility with FR4 PCB mounting.

Technical Context

This PNP transistor operates with emitter-base forward bias and collector-base reverse bias in active or saturation mode. Its design supports linear amplification at low collector currents and robust switching with defined saturation voltage and transition frequency (f_T = 70 MHz).

Thermal performance is specified for FR4 board mounting (R_{th j-a} = 500 K/W), and absolute maximum ratings include T_j = 150 °C, V_EBO = −6 V, and peak base current I_BM = −100 mA - all aligned with IEC 60134 limiting value conventions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V: Maximum safe collector-emitter voltage under open-base condition; defines upper rail limit in PNP switch designs.
I_C (DC)	−100 mA: Continuous collector current rating; sets load drive capability in low-power switching stages.
h_FE	210–340 @ I_C = −2 mA, V_CE = −10 V: Confirmed DC current gain range enabling predictable base drive sizing.
V_CEsat	≤ −500 mV @ I_C = −100 mA, I_B = −10 mA: Low saturation voltage ensures minimal power loss and heat generation in on-state.
f_T	70 MHz: Transition frequency confirms usable bandwidth up to audio and low-speed digital signal frequencies.
R_{th j-a}	500 K/W: Thermal resistance on FR4 board; determines junction temperature rise under given power dissipation.

Pinout & Package

2PB709AR,115 is housed in a plastic surface-mounted SC-59 package (JEDEC TO-236, EIAJ SC-59, standard designation SOT346), with 3 leads and dimensions per outline 98-07-17 (A = 1.3 mm, D = 3.1 mm, E = 2.7 mm, e = 1.9 mm).

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires negative current injection relative to emitter to turn on PNP device.
2	Emitter	Current source terminal; connected to higher potential (e.g., V_CC) in common-emitter configurations.
3	Collector	Current sink terminal; delivers controlled output current to load referenced to ground or lower potential.

Key Features

Feature	Design Value
PNP polarity with verified −45 V rating	Enables high-side switching and complementary use with NPN devices like 2PB601A in push-pull stages.
Guaranteed h_FE 210–340	Reduces base drive uncertainty and simplifies bias network design for consistent gain across production lots.
V_CEsat ≤ −500 mV at full rated current	Minimizes conduction loss and self-heating during sustained on-state operation in battery-powered systems.
f_T = 70 MHz	Supports reliable amplification and switching of signals up to ~10 MHz with acceptable gain margin.

Applications

LED Driver Stage	Level-Shifting Interface
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V or 5 V microcontroller GPIO pins via common-emitter configuration. IC Role / Device Role / Timing Role: PNP switch controlling LED anode connection to supply rail; base driven by inverted logic signal. Use Value: Low V_CEsat ensures >95% LED forward voltage utilization; h_FE range allows precise base resistor selection for stable current control.	Use Scenario: Translating 1.8 V logic outputs to 5 V-compatible input levels in mixed-voltage digital subsystems. IC Role / Device Role / Timing Role: Active-low level shifter using emitter-follower or common-base topology to invert and shift voltage domains. Use Value: Verified −6 V V_EBO rating prevents damage during negative transient coupling; f_T supports clean edge response up to 5 MHz.
Discrete Logic Inverter	Low-Power Sensor Signal Amplifier
Use Scenario: Constructing non-inverting or inverting gates in prototyping or cost-sensitive analog-digital hybrid boards. IC Role / Device Role / Timing Role: Core switching element in resistor-transistor logic (RTL) or diode-transistor logic (DTL) implementations. Use Value: Defined I_CM = −200 mA and I_BM = −100 mA enable robust fan-out handling without secondary buffering.	Use Scenario: Amplifying weak DC-coupled sensor outputs (e.g., thermistor bridges, photodiode current) before ADC input. IC Role / Device Role / Timing Role: Linear amplifier in common-emitter configuration with emitter degeneration for stability. Use Value: Tight h_FE spread (210–340) and low ICBO (≤ −10 nA) minimize gain drift and offset error over temperature.

LED Driver Stage

Level-Shifting Interface

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V or 5 V microcontroller GPIO pins via common-emitter configuration.

IC Role / Device Role / Timing Role: PNP switch controlling LED anode connection to supply rail; base driven by inverted logic signal.

Use Value: Low V_CEsat ensures >95% LED forward voltage utilization; h_FE range allows precise base resistor selection for stable current control.

Use Scenario: Translating 1.8 V logic outputs to 5 V-compatible input levels in mixed-voltage digital subsystems.

IC Role / Device Role / Timing Role: Active-low level shifter using emitter-follower or common-base topology to invert and shift voltage domains.

Use Value: Verified −6 V V_EBO rating prevents damage during negative transient coupling; f_T supports clean edge response up to 5 MHz.

Discrete Logic Inverter

Low-Power Sensor Signal Amplifier

Use Scenario: Constructing non-inverting or inverting gates in prototyping or cost-sensitive analog-digital hybrid boards.

IC Role / Device Role / Timing Role: Core switching element in resistor-transistor logic (RTL) or diode-transistor logic (DTL) implementations.

Use Value: Defined I_CM = −200 mA and I_BM = −100 mA enable robust fan-out handling without secondary buffering.

Use Scenario: Amplifying weak DC-coupled sensor outputs (e.g., thermistor bridges, photodiode current) before ADC input.

IC Role / Device Role / Timing Role: Linear amplifier in common-emitter configuration with emitter degeneration for stability.

Use Value: Tight h_FE spread (210–340) and low ICBO (≤ −10 nA) minimize gain drift and offset error over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3906LT1G	V_CEO = −40 V, h_FE = 100–300 @ I_C = −10 mA, R_{th j-a} = 400 K/W (on FR4)	Slightly lower voltage rating and broader h_FE spread; optimized for higher-current switching (I_C = −200 mA)	Select when higher continuous current or tighter thermal resistance is required; verify layout compatibility with SOT-23 footprint.
BC807-25,115	V_CEO = −45 V, h_FE = 160–320 @ I_C = −100 mA, same SOT346 package	Near-identical voltage/current ratings but h_FE tested at higher I_C; slightly lower f_T (≈50 MHz)	Preferred for designs requiring matched h_FE test conditions at operational current; drop-in replacement in most SC-59 layouts.

Compared with MMBT3906LT1G and BC807-25,115, the 2PB709AR,115 offers the highest guaranteed h_FE lower bound (210) and best f_T (70 MHz) among the three, making it optimal for precision gain-critical or higher-frequency analog use cases within its −100 mA limit.

Availability

2PB709AR,115 is available at Aetrix Electronics and suitable for LED driver stages, level-shifting interfaces, discrete logic inverters, and low-power sensor signal amplifiers requiring stable component supply and long-term industrial availability.

Supply support for 2PB709AR,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division.

The 2PB709AR,115 belongs to Nexperia's general-purpose bipolar transistor product line, designed for cost-effective, reliable switching and amplification in consumer, computing, and industrial electronics where proven SC-59 packaging and tight parametric consistency are essential.

FAQ

What is the package type and lead count of the 2PB709AR,115?

The 2PB709AR,115 uses the SC-59 plastic surface-mount package, also known as SOT346 or TO-236, with three leads. Pin 1 is base, Pin 2 is emitter, and Pin 3 is collector - confirmed in the official Nexperia data sheet and package outline drawing 98-07-17.

What is the guaranteed DC current gain (h_FE) range for the 2PB709AR,115?

The 2PB709AR,115 has a guaranteed h_FE range of 210 to 340 when measured at I_C = −2 mA and V_CE = −10 V, as specified in the Characteristics table of the Nexperia product data sheet dated 1999 Apr 23.

Is the 2PB709AR,115 pin-compatible with the 2PB601A?

No - the 2PB601A is the NPN complement to the 2PB709A series, not a pin-compatible alternative. While both use SOT346, their polarity reversal means base-emitter-collector roles are inverted; direct substitution would reverse circuit functionality unless board-level redesign is performed.

What is the maximum allowable collector-emitter voltage for the 2PB709AR,115?

The maximum collector-emitter voltage (V_CEO) for the 2PB709AR,115 is −45 V under open-base conditions, as stated in the Limiting Values table of the official Nexperia data sheet. Exceeding this risks permanent breakdown.

Does the 2PB709AR,115 have a specified transition frequency (f_T)?

Yes, the 2PB709AR,115 has a specified transition frequency of 70 MHz, measured at I_C = −1 mA, V_CE = −10 V, and f = 100 MHz, per the Characteristics section of the Nexperia data sheet. This confirms suitability for audio and low-speed digital signal handling.

2PB709AR,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 210 @ 2mA, 10V

Power - Max:: 250 mW

Frequency - Transition:: 70MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SMT3; MPAK

2PB709AR,115 FAQ

1.How can I place an order for 2PB709AR,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2PB709AR,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2PB709AR,115 reliable?

The price and inventory of 2PB709AR,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2PB709AR,115 is usually 5 days.

3.What payment methods are accepted for 2PB709AR,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2PB709AR,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2PB709AR,115?

2PB709AR,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2PB709AR,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2PB709AR,115?

For technical support, including 2PB709AR,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2PB709AR,115 requirements.

6.How does Aetrix verify that 2PB709AR,115 is sourced from the original manufacturer or authorized distributors?

All 2PB709AR,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2PB709AR,115 meets industry standards.

7.What is the process for return or replacement of 2PB709AR,115?

All 2PB709AR,115 units undergo pre-shipment inspection (PSI). If there is an issue with 2PB709AR,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2PB709AR,115 part is unused and in its original packaging.

Return procedure for 2PB709AR,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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