NXP Semiconductors 2PB709AS,115

Overview

2PB709AS,115 from Nexperia is a PNP general purpose bipolar junction transistor in SC-59 (SOT346) package, rated for −45 V V_CEO, −100 mA I_C, and 250 mW P_tot, with DC current gain h_FE of 290–460 at I_C = −2 mA and V_CE = −10 V, used in low-voltage switching and signal amplification circuits.

For engineers reviewing the 2PB709AS,115 datasheet, 2PB709AS,115 pinout, 2PB709AS,115 application, or 2PB709AS,115 equivalent, key selection considerations include its PNP polarity, SC-59 thermal resistance (500 K/W), V_CEsat ≤ −500 mV at −100 mA/−10 mA drive, f_T = 80 MHz, and complementarity to NPN 2PB601A.

Technical Context

This discrete PNP BJT operates in linear and saturation regions for analog amplification and digital switching. Its design supports low-power, low-voltage operation with verified cutoff currents (I_CBO ≤ −10 nA at 25 °C; ≤ −5 μA at 150 °C) and tight h_FE binning (290–460) for predictable biasing in production circuits.

The device uses silicon planar epitaxial technology, features a 3-pin surface-mount SC-59 outline (JEDEC TO-236), and is characterized per IEC 60134 limiting values with FR4 PCB mounting conditions-enabling direct integration into space-constrained consumer and industrial control boards without heatsinking.

Key Specifications

Pinout & Package

Package: SC-59 (SOT346), plastic surface-mounted, 3-lead package per JEDEC TO-236 standard; dimensions: 3.1 mm × 1.7 mm × 1.3 mm (L × W × H), with 0.95 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general purpose transistor applications.

Compared with 2PB709AR,115 and BC807-40,115, the 2PB709AS,115 offers the highest minimum h_FE (290) among SC-59 PNP transistors in this family, delivering superior current drive predictability at low base currents while maintaining identical footprint and voltage ratings.

Availability

2PB709AS,115 is available at Aetrix Electronics and suitable for LED driver circuits, relay coil drivers, and level-shifting interfaces requiring stable component supply and long-term industrial availability.

Supply support for 2PB709AS,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in high-volume discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The 2PB709AS,115 belongs to Nexperia's legacy general-purpose bipolar transistor product line, engineered for cost-sensitive, reliability-critical linear and switching applications in mass-produced electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2PB709AS,115?

The 2PB709AS,115 has a maximum collector-emitter voltage (V_CEO) rating of −45 V under open-base conditions, as specified in the Absolute Maximum Ratings table. This value defines the upper limit for DC voltage that can be safely applied between collector and emitter without risk of breakdown. Exceeding −45 V may cause permanent damage. The 2PB709AS,115 must be operated within this limit in all circuit configurations, including transient conditions.

Does the 2PB709AS,115 have a documented PNP complement part number?

Yes, the NPN complement to the 2PB709AS,115 is explicitly documented as 2PB601A in the official Nexperia data sheet. Both devices share matching voltage, current, and package specifications, enabling balanced design of push-pull or differential amplifier stages. The 2PB709AS,115 and 2PB601A are intended for use as matched pairs in applications requiring complementary switching or amplification behavior.

What is the thermal resistance from junction to ambient for the 2PB709AS,115?

The thermal resistance from junction to ambient (R_{th j-a}) for the 2PB709AS,115 is 500 K/W when mounted on a standard FR4 printed-circuit board, per the Thermal Characteristics section. This value assumes no additional copper pour or heatsinking and is used to calculate junction temperature rise (ΔT_j = P_diss × R_{th j-a}). The 2PB709AS,115 must be thermally managed accordingly to stay below its 150 °C maximum junction temperature.

Is the 2PB709AS,115 compatible with reflow soldering processes?

Yes, the 2PB709AS,115 is qualified for standard lead-free reflow soldering per JEDEC J-STD-020. Its SC-59 (SOT346) plastic package is rated for peak reflow temperatures up to 260 °C. The 2PB709AS,115 must be stored and handled per moisture sensitivity level (MSL) requirements-though not explicitly stated in the 1999 data sheet, current Nexperia documentation assigns MSL 1 to this package type, permitting unlimited floor life before reflow.

What is the transition frequency (f_T) specification for the 2PB709AS,115?

The transition frequency (f_T) for the 2PB709AS,115 is 80 MHz, measured at I_C = −1 mA, V_CE = −10 V, and f = 100 MHz. This parameter indicates the frequency at which the transistor's small-signal current gain drops to unity, confirming suitability for audio-frequency amplification and fast-switching applications. The 2PB709AS,115 maintains usable gain well below this point, supporting stable operation in signal conditioning circuits up to several megahertz.