NXP Semiconductors 2PC1815Y,412

Overview

2PC1815Y,412 from NXP Semiconductors (formerly Philips) is an NPN general-purpose bipolar junction transistor in a TO-92 (SOT54/SC-43A) through-hole package, rated for 50 V V_CEO, 150 mA I_C, and 500 mW P_tot, commonly used in audio amplifier driver stages and low-power switching circuits.

For engineers reviewing the 2PC1815Y,412 datasheet, 2PC1815Y,412 pinout, 2PC1815Y,412 application, or 2PC1815Y,412 equivalent, key selection criteria include DC current gain range (120–240 at I_C = 2 mA), V_CE(sat) ≤ 300 mV, f_T = 80 MHz, thermal resistance of 250 K/W, and compatibility with FR4 PCB mounting.

Technical Context

This discrete NPN transistor operates in linear amplification and saturated switching modes. Its h_FE binning (Y-grade: 120–240) ensures predictable gain control in bias-sensitive analog stages, while its 80 MHz f_T supports mid-frequency signal handling up to several megahertz.

The device features low leakage (I_CBO ≤ 100 nA, I_EBO ≤ 100 nA), low saturation voltages (V_CE(sat) ≤ 300 mV, V_BE(sat) ≤ 1.1 V at I_C = 100 mA/I_B = 10 mA), and is specified for operation across −65 °C to +150 °C ambient and junction temperatures.

Key Specifications

Pinout & Package

2PC1815Y,412 is housed in a plastic single-ended leaded (through-hole) TO-92 package (SOT54 / SC-43A), with 3 leads and standard 2.54 mm lead pitch. The package is optimized for manual assembly and wave soldering on FR4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with 2N3904 and BC547B, the 2PC1815Y,412 offers superior V_CEO headroom (50 V) and tighter h_FE consistency in audio driver roles, while maintaining identical TO-92 mechanical compatibility and thermal performance on FR4 boards.

Availability

2PC1815Y,412 is available at Aetrix Electronics and suitable for audio amplifier driver stages, low-voltage relay drivers, and DC motor speed control circuits requiring stable component supply and long-term industrial availability.

Supply support for 2PC1815Y,412 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and discrete semiconductor solutions, with core expertise in automotive, industrial, and consumer power management and signal conditioning.

The 2PC1815Y,412 belongs to NXP's legacy general-purpose bipolar transistor family, designed specifically for cost-sensitive, reliability-critical linear amplification and low-power switching in consumer audio, industrial controls, and instrumentation.

FAQ

What is the maximum collector-emitter voltage rating for the 2PC1815Y,412?

The 2PC1815Y,412 has a maximum collector-emitter voltage (V_CEO) rating of 50 V under open-base conditions. This specification is defined per IEC 60134 Absolute Maximum Ratings and must not be exceeded to prevent permanent device damage. Derating is required above 25 °C ambient temperature per the device's thermal resistance of 250 K/W.

What is the h_FE range of the 2PC1815Y,412 and how is it tested?

The 2PC1815Y,412 is binned to an h_FE range of 120–240, measured at V_CE = 6 V and I_C = 2 mA. This Y-grade designation distinguishes it from other variants like 2PC1815BL (350–700) and ensures predictable DC gain in bias-critical applications such as audio preamplifiers. The test condition reflects typical small-signal operating points, not power-stage conditions.

Can the 2PC1815Y,412 replace the 2N3904 in existing designs?

The 2PC1815Y,412 is not a direct replacement for the 2N3904 due to differences in V_CEO (50 V vs. 40 V), h_FE distribution, and saturation characteristics. While both are TO-92 NPN transistors, the 2PC1815Y,412 supports higher supply rails and exhibits lower V_CE(sat) at 100 mA. Substitution requires verification of voltage margins and bias stability in the target circuit.

What is the thermal resistance (R_th(j-a)) of the 2PC1815Y,412 and how is it measured?

The 2PC1815Y,412 has a thermal resistance from junction to ambient (R_th(j-a)) of 250 K/W, measured with the device mounted on a standard FR4 printed-circuit board per the datasheet note. This value assumes no heatsinking and defines the temperature rise per watt of dissipated power at 25 °C ambient. For continuous operation above 250 mW, thermal derating curves must be applied.

Is the 2PC1815Y,412 suitable for RF applications?

The 2PC1815Y,412 has a transition frequency (f_T) of 80 MHz, making it usable in narrowband RF applications up to ~10–15 MHz, such as AM detector preamplifiers or low-frequency oscillator buffers. It is not intended for high-frequency power amplification or broadband RF design, where devices with f_T > 300 MHz and optimized RF packaging are preferred.