NXP Semiconductors 2PC4617Q,115
- Part No.:
- 2PC4617Q,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- SC-75, SOT-416
- Datasheet:
-
2PC4617Q,115.pdf
- Description:
- TRANS NPN 50V 0.15A SC-75
- Quantity:
- Payment:

- Shipping:

Inventory:2,758
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Product details
Overview
2PC4617Q,115 from Nexperia is an NPN general-purpose bipolar junction transistor in SOT416 (SC-75) package, rated for 50 V VCEO, 150 mA IC, and 150 mW Ptot, with DC current gain (hFE) of 120–270 at IC = 1 mA, used for low-voltage switching and amplification in consumer audio signal paths and EDP peripheral interfaces.
For engineers reviewing the 2PC4617Q,115 datasheet, 2PC4617Q,115 pinout, 2PC4617Q,115 application, or 2PC4617Q,115 equivalent, key selection criteria include its SC-75 footprint compatibility, low-power thermal resistance (833 K/W), VEB = 7 V rating for base drive margin, and fT = 100 MHz for small-signal RF coupling stages.
Technical Context
This NPN transistor operates in active and saturation regions with defined cutoff leakage (ICBO ≤ 100 nA at 30 V, 25 °C) and low VCE(sat) ≤ 200 mV at IC/IB = 50 mA/5 mA. Its transition frequency of 100 MHz supports high-speed digital switching and narrowband amplifier stages up to ~30 MHz.
Thermal performance is specified for FR4 PCB mounting with single-sided copper and standard footprint, yielding Rth(j-a) = 833 K/W. Junction temperature is limited to 150 °C, and storage range spans −65 °C to +150 °C - suitable for non-automotive industrial ambient environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - maximum collector-emitter voltage before breakdown under open-base condition; sets safe operating voltage ceiling for low-side switch designs. |
| IC (DC) | 150 mA - continuous collector current limit; defines max steady-state load drive capability without derating. |
| hFE | 120–270 - DC current gain at IC = 1 mA, VCE = 6 V; determines required base drive for predictable saturation in logic-level interfaces. |
| VCE(sat) | ≤200 mV - collector-emitter saturation voltage at IC/IB = 50 mA/5 mA; ensures low conduction loss and minimal self-heating in switching mode. |
| fT | 100 MHz - transition frequency at IC = 2 mA, VCE = 12 V; enables use in RF preamp and clock buffer applications up to 30 MHz fundamental. |
| Rth(j-a) | 833 K/W - thermal resistance junction-to-ambient on FR4; requires careful power budgeting above ~30 mW in still-air conditions. |
| Cc | 1.5 pF - collector capacitance at VCB = 12 V, f = 1 MHz; contributes to Miller effect and bandwidth limiting in high-gain configurations. |
Pinout & Package
The 2PC4617Q,115 is housed in a plastic surface-mounted SOT416 (SC-75) package measuring 1.75 mm × 0.95 mm × 0.5 mm (L × W × H), with gull-wing leads and standard footprint per JEDEC MO-203AA.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input node; requires series resistor to limit IB ≤ 200 mA peak and ensure hFE-based gain stability. |
| 2 | Emitter | Reference terminal for bias network; connected to ground or low-impedance return path in common-emitter configurations. |
| 3 | Collector | Output current sink node; routed to load or pull-up; must remain within VCEO and Ptot limits during switching transients. |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage operation | VCEO = 50 V and VEB = 7 V enable safe integration into 3.3 V and 5 V logic-supplied circuits with headroom for transient spikes. |
| Small-outline packaging | SOT416 (SC-75) footprint saves board space in portable EDP peripherals and compact audio modules where PCB real estate is constrained. |
| Precision hFE binning | 2PC4617Q variant guarantees hFE = 120–270, supporting consistent base resistor selection across production batches without recalibration. |
| High-frequency response | fT = 100 MHz allows stable amplification of signals up to ~30 MHz, making it suitable for IF stages and clock distribution buffers. |
Applications
| Audio Signal Switching | EDP Peripheral Interface |
|---|---|
Use Scenario: Muting control in headphone amplifiers and line-out drivers using transistor as analog SPST switch. IC Role / Device Role / Timing Role: NPN switch configured in common-emitter topology, driven by microcontroller GPIO. Use Value: Low VCE(sat) ≤ 200 mV minimizes insertion loss and distortion; 1.5 pF Cc preserves audio band fidelity up to 20 kHz. | Use Scenario: Level translation between 3.3 V FPGA I/O and 5 V legacy parallel bus peripherals in embedded computing systems. IC Role / Device Role / Timing Role: Single-transistor level shifter with base resistor network enabling bidirectional voltage adaptation. Use Value: hFE binning ensures predictable turn-on threshold; 50 V VCEO accommodates 5 V bus overshoots and noise margins. |
| Low-Power Sensor Interface | Compact LED Driver |
Use Scenario: Amplifying weak analog outputs from thermistors or photodiodes in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with emitter degeneration for DC-coupled gain stability. Use Value: 100 MHz fT supports bandwidth beyond sensor response; low ICBO ≤ 100 nA reduces offset drift in high-impedance nodes. | Use Scenario: Constant-current LED biasing in indicator panels and status displays with tight space constraints. IC Role / Device Role / Timing Role: Fixed-gain current source using emitter resistor and saturated switch operation. Use Value: 150 mA IC rating supports up to three standard 20 mA LEDs in parallel; SC-75 package fits 2.0 mm pitch layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC846B,215 | Same SOT23 package; hFE = 200–450 (higher gain bin); VCEO = 65 V; Ptot = 250 mW. | Higher voltage and power rating suits wider supply rails; larger SOT23 footprint requires layout change. | Select when higher VCEO margin or increased power handling is needed; not drop-in due to package mismatch. |
| MMBT3904LT1G | SOT23 package; hFE = 100–300; VCEO = 40 V; Ptot = 310 mW; fT = 300 MHz. | Lower VCEO restricts use to ≤3.3 V systems; higher fT benefits RF front ends but increases susceptibility to parasitic oscillation. | Prefer for high-frequency analog stages where gain-bandwidth trade-off favors speed over voltage headroom. |
Compared with BC846B,215 and MMBT3904LT1G, the 2PC4617Q,115 offers optimal balance of SC-75 miniaturization, 50 V robustness, and predictable hFE binning for cost-sensitive consumer electronics - without requiring PCB redesign or gain recalibration.
Availability
2PC4617Q,115 is available at Aetrix Electronics and suitable for audio signal switching, EDP peripheral interface, and low-power sensor interface applications requiring stable component supply and long-term manufacturing continuity.
Supply support for 2PC4617Q,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.
The 2PC4617Q,115 belongs to Nexperia's general-purpose bipolar transistor family, engineered for reliable low-voltage switching and amplification in space-constrained consumer and EDP applications.
FAQ
What is the maximum collector-emitter voltage rating for the 2PC4617Q,115?
The 2PC4617Q,115 has a maximum collector-emitter voltage (VCEO) rating of 50 V under open-base conditions. This value is defined per IEC 60134 Absolute Maximum Ratings and must not be exceeded to prevent device breakdown. Derating is recommended above 70 °C ambient temperature due to thermal effects on junction integrity.
Does the 2PC4617Q,115 have a guaranteed DC current gain range?
Yes, the 2PC4617Q,115 is binned to guarantee hFE = 120–270 at IC = 1 mA and VCE = 6 V. This specification is confirmed in Table 6 of the official Nexperia datasheet (Rev. 05, 2009) and distinguishes it from other variants like 2PC4617R (180–390) and 2PC4617S (270–560).
What package type is used for the 2PC4617Q,115?
The 2PC4617Q,115 uses the SOT416 (SC-75) plastic surface-mounted package - a 3-lead gull-wing outline measuring 1.75 mm × 0.95 mm × 0.5 mm. Its JEDEC MO-203AA-compliant footprint is smaller than SOT23 and optimized for ultra-compact PCB layouts in portable electronics.
Can the 2PC4617Q,115 be used in RF applications?
Yes, the 2PC4617Q,115 has a transition frequency (fT) of 100 MHz at IC = 2 mA and VCE = 12 V, making it suitable for low-power RF amplification and buffering up to ~30 MHz. Its 1.5 pF collector capacitance and low noise characteristics support IF stage use, though external neutralization may be needed above 50 MHz.
What is the thermal resistance of the 2PC4617Q,115 on a standard FR4 board?
The 2PC4617Q,115 exhibits a junction-to-ambient thermal resistance (Rth(j-a)) of 833 K/W when mounted on a single-sided FR4 PCB with tin-plated copper and standard footprint. This value assumes no additional copper pour or thermal vias; adding 25 mm² of 1 oz copper on the collector pad reduces Rth(j-a) by ~200 K/W.
2PC4617Q,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 150 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 1mA, 6V
- Power - Max:
- 150 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
2PC4617Q,115 FAQ
1.How can I place an order for 2PC4617Q,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2PC4617Q,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that 2PC4617Q,115 is sourced from the original manufacturer or authorized distributors?
All 2PC4617Q,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2PC4617Q,115 meets industry standards.
7.What is the process for return or replacement of 2PC4617Q,115?
All 2PC4617Q,115 units undergo pre-shipment inspection (PSI). If there is an issue with 2PC4617Q,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2PC4617Q,115 part is unused and in its original packaging.
Return procedure for 2PC4617Q,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2PC4617Q,115 Tags

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