NXP Semiconductors 2PC4617S,115
- Part No.:
- 2PC4617S,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- SC-75, SOT-416
- Datasheet:
-
2PC4617S,115.pdf
- Description:
- TRANS NPN 50V 0.15A SC-75
- Quantity:
- Payment:

- Shipping:

Inventory:3,382
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Product details
Overview
2PC4617S,115 from Nexperia is an NPN general-purpose bipolar junction transistor in SOT416 (SC-75) package, rated for 50 V VCEO, 150 mA IC, and 150 mW Ptot, with DC current gain hFE of 270–560 at IC = 1 mA, used in low-power switching and amplification circuits in consumer electronics and EDP systems.
For engineers reviewing the 2PC4617S,115 datasheet, 2PC4617S,115 pinout, 2PC4617S,115 application, or 2PC4617S,115 equivalent, key selection criteria include its SC-75 footprint compatibility, low-voltage/low-current operation, verified hFE range, thermal resistance of 833 K/W, and complementary PNP pairing with 2PA1774.
Technical Context
This discrete NPN transistor operates in linear and saturation regions with VCE(sat) ≤ 200 mV at IC = 50 mA / IB = 5 mA and fT ≥ 100 MHz, enabling use in RF-coupled preamplifiers and digital logic interface stages. Its 1.5 pF collector capacitance supports stable high-frequency bias networks.
Designed for surface-mount assembly on FR4 PCBs with single-sided copper, it exhibits Tj up to 150 °C and Rth(j-a) = 833 K/W under standard footprint conditions-critical for thermally constrained portable designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in low-voltage switching stages. |
| IC (DC) | 150 mA - Continuous collector current handling; suitable for driving LEDs, small relays, or logic-level signal buffering. |
| hFE | 270–560 - DC current gain at IC = 1 mA, VCE = 6 V; enables predictable base drive sizing in amplifier and switch designs. |
| VCE(sat) | ≤200 mV - Low saturation voltage at IC = 50 mA / IB = 5 mA; minimizes power loss and self-heating in saturated-switch applications. |
| fT | ≥100 MHz - Transition frequency at IC = 2 mA, VCE = 12 V; supports audio and low-MHz RF amplification without gain roll-off. |
| Rth(j-a) | 833 K/W - Junction-to-ambient thermal resistance on FR4; informs derating curves for ambient temperatures above 25 °C. |
Pinout & Package
SOT416 (SC-75) plastic surface-mounted package: ultra-small outline, 3-pin, single-ended lead frame, 1.75 mm × 0.95 mm footprint, 0.45 mm height, optimized for space-constrained portable PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input node; requires series resistor to limit IB ≤ 200 mA peak per datasheet limiting values. |
| 2 | Emiter | Common reference terminal in common-emitter configuration; connected to ground or low-impedance return path. |
| 3 | Collector | Output current sink node; connects to load (e.g., LED anode or relay coil) and positive supply via pull-up. |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage operation | VCEO = 50 V and VEBO = 7 V enable safe use in 3.3 V, 5 V, and 12 V logic-supplied circuits without overvoltage risk. |
| High DC current gain | hFE = 270–560 reduces required base drive current, lowering MCU GPIO loading and improving system power efficiency. |
| Ultra-compact packaging | SOT416 (SC-75) footprint saves >60% board area vs. SOT23, critical for wearables and miniaturized consumer modules. |
| Controlled saturation behavior | VCE(sat) ≤ 200 mV ensures minimal voltage drop across collector-emitter during switching, preserving output headroom. |
Applications
| LED Driver Circuit | Logic-Level Translator |
|---|---|
Use Scenario: Driving indicator LEDs in battery-powered remote controls and IoT sensor nodes. IC Role / Device Role / Timing Role: NPN switch controlling LED current path between VCC and ground. Use Value: Low VCE(sat) preserves battery life by minimizing wasted power; hFE range allows consistent turn-on with weak microcontroller outputs. | Use Scenario: Level-shifting 1.8 V GPIO signals to 3.3 V peripherals in mixed-voltage embedded systems. IC Role / Device Role / Timing Role: Active-low open-collector translator using emitter-follower or common-emitter topology. Use Value: 50 V VCEO provides margin against transient coupling; fast fT supports clean edge transitions up to ~10 MHz. |
| Audio Preamp Stage | EDP Power Sequencing |
Use Scenario: Low-noise voltage amplification in headphone jack detection or microphone bias circuits. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with resistive collector load. Use Value: 1.5 pF Cc limits Miller effect; hFE stability across temperature supports consistent gain in portable audio paths. | Use Scenario: Enabling/disabling auxiliary power rails in desktop motherboards and docking stations. IC Role / Device Role / Timing Role: Low-side switch controlling gate of external MOSFET or enable pin of LDO. Use Value: 150 mA IC rating safely drives typical enable inputs; SOT416 allows dense placement near power ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC846B,215 | VCEO = 65 V, hFE = 200–450, same SOT23 package (larger than SOT416) | Higher voltage rating but larger footprint; not a drop-in replacement due to package mismatch | Select when board layout allows SOT23 and higher VCEO margin is needed |
| MMBT3904LT1G | VCEO = 40 V, hFE = 100–300, SOT23 package | Lower voltage and gain; requires recalculation of base resistor for same IC | Choose only if cost sensitivity outweighs performance and size requirements |
Compared with BC846B,215 and MMBT3904LT1G, the 2PC4617S,115 delivers superior gain consistency and smallest PCB footprint among these three, making it optimal for space-constrained, low-voltage, medium-gain switching where thermal dissipation is managed via layout.
Availability
2PC4617S,115 is available at Aetrix Electronics and suitable for LED driver circuits, logic-level translation, audio preamplification, and EDP power sequencing requiring stable component supply and long-term manufacturability.
Supply support for 2PC4617S,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017, serving automotive, industrial, computing, consumer, and wearable markets with high-volume, high-reliability components.
The 2PC4617S,115 belongs to Nexperia's general-purpose bipolar transistor family, engineered for cost-effective, space-efficient switching and amplification in battery-powered and high-density consumer electronics.
FAQ
What is the maximum continuous collector current for the 2PC4617S,115?
The 2PC4617S,115 has a maximum DC collector current (IC) of 150 mA, as specified in Table 4 of its datasheet under limiting values. This rating applies at Tamb ≤ 25 °C with proper PCB thermal design. Derating is required above this ambient temperature, guided by its Rth(j-a) of 833 K/W. Exceeding 150 mA risks thermal runaway or permanent degradation of the 2PC4617S,115.
Does the 2PC4617S,115 have a PNP complement, and what is its part number?
Yes, the PNP complement of the 2PC4617S,115 is the 2PA1774, explicitly stated in section 1.1 of the product profile. Both devices share matching voltage ratings, current capabilities, and SOT416 packaging, enabling balanced push-pull or differential pair implementations. The 2PA1774 is documented as a direct functional counterpart-not a generic alternative-to the 2PC4617S,115.
What is the DC current gain (hFE) range for the 2PC4617S,115 at typical operating conditions?
The 2PC4617S,115 exhibits a DC current gain (hFE) of 270 to 560 when measured at IC = 1 mA and VCE = 6 V, per Table 6 in the datasheet. This range reflects device-to-device variation within the 2PC4617S,115 production lot and must be accounted for in base resistor calculations. It is higher than the 2PC4617Q and 2PC4617R variants, confirming the 2PC4617S,115 as the highest-gain version in the family.
Can the 2PC4617S,115 be used in RF applications, and what is its transition frequency?
Yes, the 2PC4617S,115 supports RF applications up to its transition frequency (fT) of ≥100 MHz, measured at IC = 2 mA and VCE = 12 V. Its 1.5 pF collector capacitance and low parasitic inductance from the SOT416 package contribute to stable high-frequency response. While not intended for power RF, the 2PC4617S,115 is suitable for low-power RF preamplifiers, oscillator biasing, and IF signal conditioning stages.
What marking code identifies the 2PC4617S,115 on the physical device?
The 2PC4617S,115 is marked with the code "ZS" on its top surface, as confirmed in Table 3 of the datasheet under Marking Codes. This laser-etched or molded marking distinguishes it from other variants: 2PC4617Q uses "ZQ", and 2PC4617R uses "ZR". Visual inspection of the "ZS" marking is a reliable method to verify authenticity and variant identity of the 2PC4617S,115.
2PC4617S,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 150 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 270 @ 1mA, 6V
- Power - Max:
- 150 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
2PC4617S,115 FAQ
1.How can I place an order for 2PC4617S,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2PC4617S,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2PC4617S,115 reliable?
The price and inventory of 2PC4617S,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2PC4617S,115 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2PC4617S,115?
For technical support, including 2PC4617S,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2PC4617S,115 requirements.
6.How does Aetrix verify that 2PC4617S,115 is sourced from the original manufacturer or authorized distributors?
All 2PC4617S,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2PC4617S,115 meets industry standards.
7.What is the process for return or replacement of 2PC4617S,115?
All 2PC4617S,115 units undergo pre-shipment inspection (PSI). If there is an issue with 2PC4617S,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2PC4617S,115 part is unused and in its original packaging.
Return procedure for 2PC4617S,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2PC4617S,115 Tags

-
MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

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MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

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MMBT2222ALT1G
onsemi
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