NXP Semiconductors 2PD1820AQ,115
- Part No.:
- 2PD1820AQ,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
2PD1820AQ,115.pdf
- Description:
- TRANS NPN 50V 0.5A SC-70
- Quantity:
- Payment:

- Shipping:

Inventory:9,946
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Product details
Overview
2PD1820AQ,115 from Nexperia is an NPN general purpose transistor in SC-70 (SOT323) package, rated for 50 V VCEO, 500 mA IC, and 600 mV VCEsat at 300 mA/30 mA drive. It delivers hFE of 85–170 at 150 mA/10 V and supports 150 MHz fT, enabling compact switching and amplification in portable battery-powered equipment.
For engineers reviewing the 2PD1820AQ,115 datasheet, 2PD1820AQ,115 pinout, 2PD1820AQ,115 application, or 2PD1820AQ,115 equivalent, key selection criteria include DC current gain binning (Q-grade), low saturation voltage for efficient switching, thermal resistance (625 K/W on FR4), and SOT323 footprint compatibility with space-constrained PCB layouts.
Technical Context
This discrete NPN bipolar junction transistor operates in linear and saturated modes, with base-emitter forward bias enabling current-controlled collector current. Its 150 MHz transition frequency and 15 pF collector capacitance support medium-speed digital switching and audio-frequency amplification.
The device features a maximum junction temperature of 150 °C and thermal resistance of 625 K/W when mounted on FR4, requiring careful power derating above 25 °C ambient. Its 5 V VEBO and 60 V VCBO define safe operating limits for bias network design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; sets upper rail limit in low-voltage switch designs. |
| IC (DC) | 500 mA - Continuous collector current handling; suitable for driving small relays, LEDs, or logic-level interfaces. |
| VCEsat | 600 mV max at IC=300 mA/IB=30 mA - Low saturation voltage minimizes conduction loss and self-heating in switching applications. |
| hFE | 85–170 at IC=150 mA/VCE=10 V - Q-grade DC current gain bin ensures predictable base drive requirements. |
| fT | 150 MHz - Transition frequency enables reliable operation up to ~10–20 MHz switching or audio amplification bandwidth. |
| Rth j-a | 625 K/W on FR4 - High thermal resistance necessitates layout-aware copper pour or power derating above 25 °C ambient. |
Pinout & Package
Package: SC-70 (SOT323), plastic surface-mounted, 3-lead package with 0.65 mm lead pitch; dimensions per JEDEC MO-203AA.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input node; requires series resistor to limit IB and ensure saturation under worst-case hFE. |
| 2 | Emitter | Common reference terminal; connected to ground or low-side return path in most switching configurations. |
| 3 | Collector | Output current sink node; connects to load (e.g., LED anode or relay coil) and positive supply rail. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current capability | 500 mA continuous collector current supports direct drive of moderate-power loads without external buffering. |
| Low VCEsat | ≤600 mV at 300 mA ensures <180 mW conduction loss, reducing thermal stress in battery-operated devices. |
| Controlled hFE binning | Q-grade (85–170) provides consistent base drive design margin across production lots. |
| Small-outline SOT323 package | 1.3 × 2.2 mm footprint enables high-density placement in wearables, hearing aids, and compact IoT sensors. |
Applications
| Portable LED Flash Control | Low-Voltage Logic-Level Shifting |
|---|---|
Use Scenario: Driving white LEDs in smartphone camera flash modules powered by 3.3 V or 3.7 V Li-ion batteries. IC Role / Device Role / Timing Role: NPN switch controlling LED current path between battery and cathode, with base driven by MCU GPIO. Use Value: Low 600 mV VCEsat preserves battery voltage headroom and extends flash duration per charge cycle. | Use Scenario: Translating 1.8 V logic outputs to 3.3 V or 5 V domains in mixed-voltage microcontroller subsystems. IC Role / Device Role / Timing Role: Single-transistor level shifter with emitter-follower or common-emitter configuration. Use Value: 150 MHz fT and controlled hFE enable clean edge transitions up to 10 MHz without added propagation delay. |
| Compact Relay Driver | Audio Pre-amplifier Stage |
Use Scenario: Activating miniature signal relays (e.g., 5 V, 100 mW coil) in industrial sensor interface boards. IC Role / Device Role / Timing Role: Saturated switch providing full coil current with minimal base drive overhead. Use Value: 500 mA IC rating and 60 V VCBO accommodate relay back-EMF spikes without snubber circuitry. | Use Scenario: Low-noise pre-amplification of electret microphone signals in voice-enabled edge devices. IC Role / Device Role / Timing Role: Common-emitter amplifier biased in linear region for 20 Hz–20 kHz signal gain. Use Value: 85–170 hFE bin enables stable gain setting with predictable base bias resistors and low distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC846B,215 | Higher hFE (200–450), same SOT323 package, but lower IC (100 mA) and VCEO (65 V). | Better for low-current amplification; unsuitable for >100 mA switching loads. | Select BC846B,215 only when gain stability at µA–mA levels is critical and load current remains ≤100 mA. |
| MMBT2222ALT1G | Higher IC (600 mA), TO-236 (SOT-23) package, VCEO = 40 V, VCEsat = 1 V typical at same drive. | Larger footprint; higher saturation loss reduces efficiency in battery-critical designs. | Choose MMBT2222ALT1G only if higher current headroom is required and board space allows SOT-23. |
Compared with BC846B,215 and MMBT2222ALT1G, the 2PD1820AQ,115 uniquely balances 500 mA current capability, 600 mV saturation voltage, and Q-grade hFE control in the ultra-compact SOT323 package-making it optimal for space- and efficiency-constrained portable switching where precise gain predictability matters.
Availability
2PD1820AQ,115 is available at Aetrix Electronics and suitable for portable LED drivers, low-voltage logic translation, compact relay interfaces, and audio pre-amplifier stages requiring stable component supply and consistent Q-grade hFE performance.
Supply support for 2PD1820AQ,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with deep expertise in automotive, industrial, and consumer electronics.
The 2PD1820AQ,115 belongs to Nexperia's general-purpose bipolar transistor product line, engineered for reliable, cost-effective switching and amplification in space-constrained, battery-powered applications.
FAQ
What is the hFE range for 2PD1820AQ,115 and how is it binned?
The 2PD1820AQ,115 is binned to the Q-grade, with DC current gain (hFE) specified from 85 to 170 when tested at IC = 150 mA and VCE = 10 V. This tight binning ensures consistent base drive requirements across production lots, simplifying design validation for portable switching circuits where predictable turn-on behavior is essential. The 2PD1820AQ,115 data sheet confirms this range in its Characteristics table.
What is the maximum power dissipation for 2PD1820AQ,115 at room temperature?
The 2PD1820AQ,115 has a total power dissipation (Ptot) of 200 mW at Tamb ≤ 25 °C when mounted on an FR4 PCB. Due to its 625 K/W thermal resistance, power must be linearly derated above 25 °C-reducing to approximately 100 mW at 75 °C ambient. This limitation directly impacts continuous switching duty cycles in sealed enclosures. The 2PD1820AQ,115 datasheet specifies these values in the Limiting Values section.
Is 2PD1820AQ,115 pin-compatible with other SOT323 NPN transistors like BC847?
No-while both 2PD1820AQ,115 and BC847 use the SOT323 package, their pinouts differ: 2PD1820AQ,115 follows base-emitter-collector (1-2-3), whereas BC847 uses emitter-base-collector (1-2-3). Swapping them without PCB revision risks incorrect biasing or device failure. Always verify pin mapping using the official 2PD1820AQ,115 datasheet diagram before substitution.
What is the PNP complement for 2PD1820AQ,115?
The officially designated PNP complement for 2PD1820AQ,115 is the 2PB1219A, which shares the same SOT323 package, comparable voltage/current ratings (VCEO = −50 V, IC = −500 mA), and matched thermal characteristics. This pairing enables complementary push-pull output stages or dual-rail switching in portable equipment. The 2PD1820AQ,115 datasheet explicitly lists 2PB1219A as its complement in the Description section.
Does 2PD1820AQ,115 support high-frequency switching applications?
The 2PD1820AQ,115 has a transition frequency (fT) of 150 MHz, making it suitable for switching up to ~10–20 MHz with acceptable gain and rise/fall times. However, its 15 pF collector capacitance and relatively high saturation voltage mean it is optimized for medium-speed, efficiency-critical applications-not RF or GHz-range switching. For such use cases, the 2PD1820AQ,115 should be evaluated against dedicated RF transistors.
2PD1820AQ,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max):
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 85 @ 150mA, 10V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70
2PD1820AQ,115 FAQ
1.How can I place an order for 2PD1820AQ,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2PD1820AQ,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2PD1820AQ,115 reliable?
The price and inventory of 2PD1820AQ,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2PD1820AQ,115 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2PD1820AQ,115?
For technical support, including 2PD1820AQ,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2PD1820AQ,115 requirements.
6.How does Aetrix verify that 2PD1820AQ,115 is sourced from the original manufacturer or authorized distributors?
All 2PD1820AQ,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2PD1820AQ,115 meets industry standards.
7.What is the process for return or replacement of 2PD1820AQ,115?
All 2PD1820AQ,115 units undergo pre-shipment inspection (PSI). If there is an issue with 2PD1820AQ,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2PD1820AQ,115 part is unused and in its original packaging.
Return procedure for 2PD1820AQ,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2PD1820AQ,115 Tags

-
MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
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