NXP Semiconductors 2PD601AQW,115
- Part No.:
- 2PD601AQW,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
2PD601AQW,115.pdf
- Description:
- TRANS NPN 50V 0.1A SC-70
- Quantity:
- Payment:

- Shipping:

Inventory:5,587
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Product details
Overview
2PD601AQW from Nexperia is an NPN general purpose transistor in SOT323 (SC-70) package, rated for 50 V VCEO, 100 mA IC, and DC current gain (hFE) of 160–260 (Group Q). It supports switching and amplification in compact consumer and industrial signal-path circuits with low saturation voltage (VCEsat ≤ 250 mV at IC = 100 mA, IB = 10 mA).
For engineers reviewing the 2PD601AQW datasheet, 2PD601AQW pinout, 2PD601AQW application, or 2PD601AQW equivalent, key selection criteria include its SOT323 thermal resistance (Rth(j-a) = 625 K/W), fT = 100 MHz transition frequency, and verified Group Q hFE range - critical for bias-stable low-power amplifier stages and digital logic interface switching.
Technical Context
This discrete NPN bipolar junction transistor operates in linear or saturated mode depending on base drive. Its 60 V VCBO and 6 V VEBO ratings support robust operation in 5 V and 3.3 V logic-level interfacing, while low Cc = 3 pF enables stable high-frequency small-signal performance up to 100 MHz.
The device is optimized for surface-mount assembly using reflow only, with thermal derating defined for SOT323 mounting conditions. Its 200 mW Ptot at Tamb ≤ 25 °C and 150 °C maximum junction temperature align it with space-constrained industrial control and portable electronics where thermal margin is constrained.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; defines safe operating range in common-emitter switch configurations. |
| IC (DC) | 100 mA - Continuous collector current handling; suitable for driving LEDs, small relays, or logic buffers. |
| hFE (Group Q) | 160–260 - DC current gain at IC = 2 mA, VCE = 10 V; ensures predictable base-current sizing for bias networks. |
| VCEsat | ≤ 250 mV - Low saturation voltage at IC = 100 mA / IB = 10 mA; minimizes power loss and heating in switching applications. |
| fT | 100 MHz - Transition frequency at IC = 2 mA, VCE = 10 V; supports RF pre-amplifier and fast-switching use cases. |
| Rth(j-a) | 625 K/W - Junction-to-ambient thermal resistance in SOT323; informs thermal design for continuous operation at elevated ambient temperatures. |
Pinout & Package
SOT323 (SC-70) plastic surface-mounted package; 3 leads, 1.35 mm × 1.15 mm footprint, 0.95 mm height, standard reflow-compatible construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input terminal; requires series resistor to limit IB and ensure hFE-based IC scaling. |
| 2 | Emitter | Common reference node in common-emitter configuration; tied to ground or low-impedance return path. |
| 3 | Collector | Output current terminal; connects to load (e.g., LED anode or relay coil) and supply rail via pull-up. |
Key Features
| Feature | Design Value |
|---|---|
| Group Q hFE binning | Guaranteed 160–260 gain range enables consistent bias design without post-production trimming. |
| SOT323 (SC-70) package | Enables high-density PCB layouts with 1.35 mm × 1.15 mm footprint and compatibility with standard 0.65 mm pitch reflow processes. |
| VCEsat ≤ 250 mV | Reduces conduction loss in saturated switching, improving efficiency in battery-powered sensor nodes and IoT peripherals. |
| fT = 100 MHz | Supports audio pre-amplification and clock buffer applications where bandwidth exceeds typical general-purpose transistors. |
Applications
| LED Driver Circuit | Microcontroller GPIO Interface |
|---|---|
Use Scenario: Driving a single 20 mA indicator LED from a 3.3 V microcontroller output pin. IC Role / Device Role / Timing Role: NPN switch configured in common-emitter topology, turning LED on/off via base current control. Use Value: Low VCEsat ensures <10 mW dissipation at full current, preserving MCU I/O voltage margin and enabling direct drive without level-shifting. | Use Scenario: Level-shifting and current boosting between 1.8 V logic outputs and 5 V peripheral enable inputs. IC Role / Device Role / Timing Role: Active-low open-collector interface transistor, translating logic states while isolating voltage domains. Use Value: Verified hFE range allows precise base resistor calculation for reliable turn-on across process and temperature variation. |
| Audio Signal Amplifier | Power Supply Enable Switch |
Use Scenario: Small-signal pre-amplification stage for electret microphone output in portable audio devices. IC Role / Device Role / Timing Role: Common-emitter amplifier biased in linear region, providing voltage gain with minimal distortion. Use Value: 100 MHz fT and low Cc = 3 pF maintain flat frequency response up to 20 kHz with stable phase margin. | Use Scenario: Enabling a 12 V auxiliary rail via microcontroller command in industrial control modules. IC Role / Device Role / Timing Role: High-side or low-side enable switch controlling PMOS gate driver or LDO EN pin. Use Value: 50 V VCEO rating provides 2× safety margin over 12 V rail, ensuring long-term reliability under transient overvoltage events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC846B,215 | Same SOT323 package; hFE = 200–450 (Group B); higher fT = 100 MHz; identical VCEO/IC ratings. | Broader hFE spread may require wider base-resistor tolerance in precision bias designs. | Select when tighter hFE binning is not required and higher gain variability is acceptable. |
| MMBT3904LT1G | SOT23 package (larger footprint); hFE = 100–300; VCEO = 40 V; Ptot = 310 mW; Rth(j-a) = 405 K/W. | Lower VCEO limits use in 48 V tolerant circuits; higher power rating suits higher ambient temperature environments. | Select when board layout allows SOT23 and 40 V rating suffices for target supply rails. |
Compared with BC846B,215 and MMBT3904LT1G, the 2PD601AQW offers tighter hFE control (160–260) and superior thermal resistance matching for SOT323-constrained designs, making it preferred for miniaturized, thermally sensitive applications requiring predictable gain behavior.
Availability
2PD601AQW is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO interfaces, audio signal amplifiers, and power supply enable switches requiring stable component supply and consistent Group Q hFE performance.
Supply support for 2PD601AQW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, consumer, and wearable markets.
The 2PD601A series belongs to Nexperia's general-purpose bipolar transistor portfolio, designed specifically for cost-sensitive, space-constrained switching and amplification tasks in high-volume consumer and industrial electronics.
FAQ
What is the package type and lead count of the 2PD601AQW?
The 2PD601AQW uses the SOT323 (SC-70) plastic surface-mounted package with three leads. Its dimensions are 1.35 mm × 1.15 mm × 0.95 mm, and it is qualified for reflow soldering only. This compact footprint supports high-density PCB layouts in portable and space-limited applications where the 2PD601AQW delivers reliable NPN switching performance.
What is the guaranteed DC current gain (hFE) range for the 2PD601AQW?
The 2PD601AQW is binned into Group Q, with a guaranteed hFE range of 160 to 260 when measured at IC = 2 mA and VCE = 10 V. This tight gain specification enables predictable base-current design in bias networks, reducing calibration overhead in production for circuits relying on the 2PD601AQW as a linear amplifier or saturated switch.
Does the 2PD601AQW support reflow soldering, and what are the thermal limitations?
Yes, reflow soldering is the only recommended method for the 2PD601AQW. Its thermal resistance from junction to ambient is 625 K/W under standard SOT323 mounting conditions. With a total power dissipation limit of 200 mW at Tamb ≤ 25 °C and a maximum junction temperature of 150 °C, the 2PD601AQW requires careful thermal derating above ambient - especially in sealed enclosures where airflow is restricted.
What is the maximum collector-emitter voltage (VCEO) rating for the 2PD601AQW?
The 2PD601AQW has a maximum VCEO rating of 50 V, specified under open-base conditions. This rating defines the upper limit for collector-to-emitter voltage in common-emitter configurations and provides a 2× safety margin over typical 24 V industrial control rails. Exceeding this value risks permanent breakdown and must be avoided in all operating conditions of the 2PD601AQW.
How does the 2PD601AQW compare to the 2PD601ARW and 2PD601ASW variants?
The 2PD601AQW, 2PD601ARW, and 2PD601ASW share identical SOT323 packaging and electrical ratings (VCEO, IC, fT, etc.), differing only in DC current gain binning: Q (160–260), R (210–340), and S (290–460). Designers select the 2PD601AQW when moderate, tightly controlled gain is required - for example, in feedback-stable amplifier stages or deterministic digital switching where excessive hFE could cause unintended latch-up or timing skew.
2PD601AQW,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 160 @ 2mA, 10V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70
2PD601AQW,115 FAQ
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Please submit a Request for Quotation (RFQ) for 2PD601AQW,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of 2PD601AQW,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2PD601AQW,115 is usually 5 days.
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5.How can I obtain technical support or documentation for 2PD601AQW,115?
For technical support, including 2PD601AQW,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2PD601AQW,115 requirements.
6.How does Aetrix verify that 2PD601AQW,115 is sourced from the original manufacturer or authorized distributors?
All 2PD601AQW,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2PD601AQW,115 meets industry standards.
7.What is the process for return or replacement of 2PD601AQW,115?
All 2PD601AQW,115 units undergo pre-shipment inspection (PSI). If there is an issue with 2PD601AQW,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2PD601AQW,115 part is unused and in its original packaging.
Return procedure for 2PD601AQW,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2PD601AQW,115 Tags

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MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

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BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
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