Toshiba Semiconductor and Storage 2SA1162-GR,LF

Overview

2SA1162-GR,LF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial bipolar transistor designed for low-frequency and audio-frequency amplifier stages. It delivers VCEO = −50 V, IC(max) = −150 mA, hFE = 200–400 (GR grade), NF = 1 dB (typ.), and operates in S-Mini package with pinout Base–Emitter–Collector. It serves as a high-linearity, low-noise active device in preamplifier and driver circuits.

For engineers reviewing the 2SA1162-GR,LF datasheet, 2SA1162-GR,LF pinout, 2SA1162-GR,LF application, or 2SA1162-GR,LF equivalent, key selection criteria include guaranteed hFE range (200–400), AEC-Q101 qualification for automotive use, −50 V breakdown rating, low 1 dB noise figure at 1 kHz, and S-Mini footprint compatibility with manual or automated assembly.

Technical Context

This PNP transistor uses epitaxial base construction to achieve high hFE linearity-verified by hFE(IC = −0.1 mA)/hFE(IC = −2 mA) = 0.95 (typ.)-and low noise performance critical for analog signal amplification. Its −50 V VCEO and −50 V VCBO ratings support robust operation in split-rail audio supplies and negative-voltage biasing networks.

The GR suffix denotes the highest hFE bin (200–400), optimized for consistent gain matching in differential pairs or cascaded gain stages. The LF suffix confirms lead-free termination and RoHS compliance, validated per Toshiba's Rev.4.0.A specification dated 2026-04-14.

Key Specifications

Pinout & Package

S-Mini package: ultra-small plastic surface-mount outline (2.5 mm × 1.3 mm × 0.9 mm), 12 mg typical weight, compatible with standard reflow profiles. Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Compared with 2SA1162-GR,LF, the 2SA1015-Y,LF trades hFE linearity and noise performance for broader availability and lower cost, while MMBT4403 offers smaller footprint but sacrifices voltage rating, noise floor, and automotive qualification-making 2SA1162-GR,LF the optimal choice for AEC-Q101-compliant, low-noise, high-linearity PNP amplification.

Availability

2SA1162-GR,LF is available at Aetrix Electronics and suitable for audio preamplifiers, automotive infotainment systems, and industrial sensor interfaces requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant reliability.

Supply support for 2SA1162-GR,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade validation.

The 2SA1162-GR,LF belongs to Toshiba's legacy bipolar transistor family targeting low-frequency analog signal conditioning, specifically engineered for high-gain linearity, low-noise audio amplification, and AEC-Q101-compliant automotive deployment.

FAQ

What does the "GR" suffix mean in 2SA1162-GR,LF?

The "GR" suffix designates the hFE gain bin: 200–400 at VCE = −6 V and IC = −2 mA. This is the highest gain grade offered for the 2SA1162 family, ensuring tighter DC gain matching for precision amplifier designs. The "LF" indicates lead-free termination and RoHS compliance, verified per Toshiba's Rev.4.0.A specification. 2SA1162-GR,LF maintains identical electrical and thermal characteristics as non-LF variants except for plating composition.

Is 2SA1162-GR,LF qualified for automotive applications?

Yes, 2SA1162-GR,LF is explicitly AEC-Q101 qualified, as confirmed in Toshiba's orderable part number table and Rev.4.0.A datasheet. It undergoes stress testing for temperature cycling, high-temperature reverse bias, and ESD robustness required for under-hood and cabin electronics. 2SA1162-GR,LF is approved for automotive use-not just general or unintended use-per Toshiba's official classification.

What is the pinout configuration of 2SA1162-GR,LF in the S-Mini package?

The 2SA1162-GR,LF uses the S-Mini (SOT-23-like) package with standardized pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches Toshiba's official package drawing and is electrically verified via curve tracer measurements in the datasheet's Fig. 8.1–8.6. No alternate pinouts exist for this part number or its variants.

How does the noise figure of 2SA1162-GR,LF compare to similar PNP transistors?

2SA1162-GR,LF achieves 1 dB (typ.) noise figure at 1 kHz with RG = 10 kΩ-superior to most general-purpose PNPs like MMBT4403 (4 dB typ.) or 2SA1015-Y,LF (10 dB max). This low NF results from optimized epitaxial base doping and geometry, making 2SA1162-GR,LF especially effective in microphone preamps where signal-to-noise ratio is critical. The value is measured and specified-not estimated-in Toshiba's Rev.4.0.A datasheet.

Can 2SA1162-GR,LF be used as a direct replacement for 2SA1162-O,LF or 2SA1162-Y,LF?

2SA1162-GR,LF is functionally interchangeable with 2SA1162-O,LF and 2SA1162-Y,LF in the same S-Mini package, differing only in hFE bin: O = 70–140, Y = 120–240, GR = 200–400. All share identical absolute maximum ratings, noise figure, fT, and thermal characteristics. Circuit redesign is unnecessary unless the original design relies on specific hFE-dependent bias points-then verify quiescent current and VCE with the higher-gain GR variant. 2SA1162-GR,LF remains a drop-in replacement for layout and thermal management.