onsemi 2SA1162GT1

Overview

2SA1162GT1 from onsemi is a PNP general-purpose amplifier transistor in SC−59 (SOT-416) surface-mount package, rated for V_(BR)CEO = 50 V, I_C = 150 mA continuous, h_FE = 200–400 at I_C = 2.0 mA, f_T = 80 MHz, and P_D = 200 mW. It serves as a low-noise, medium-speed switching or linear amplification device in compact consumer and industrial signal-path circuits.

For engineers reviewing the 2SA1162GT1 datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, SC−59 footprint compatibility, h_FE binning (G-grade), V_CE(sat) ≤ 0.3 V at I_C/I_B = 100/10 mA, and thermal derating behavior on standard FR-4 PCBs.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with verified DC current gain spanning 200–400 under standardized test conditions (V_CE = 6.0 V, I_C = 2.0 mA). Its 80 MHz f_T supports audio-frequency amplification and low-speed digital switching up to ~10 MHz.

Thermal performance is defined by R_JA = 370°C/W on standard FR-4, yielding 338 mW theoretical dissipation at T_A = 25°C - though rated P_D is conservatively specified at 200 mW per JEDEC SC−59 limits. The device exhibits C_obo = 7.0 pF and NF = 10 dB at 1 kHz, confirming suitability for low-noise preamplifier stages.

Key Specifications

Pinout & Package

2SA1162GT1 uses the SC−59 (SOT-416) plastic surface-mount package, measuring 2.7–3.1 mm × 1.3–1.7 mm × 0.95–1.0 mm (L×W×H), with moisture sensitivity level (MSL) 1 and no pre-bake required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier transistor applications.

Compared with 2SA1162GT1, 2SA1015KT146 offers identical electrical envelope but looser h_FE control, while MMBT2907ALT1G provides superior speed and headroom at the cost of larger footprint and non-drop-in replacement - making 2SA1162GT1 optimal for space-constrained, gain-stable PNP amplification.

Availability

2SA1162GT1 is available at Aetrix Electronics and suitable for audio preamplifiers, discrete logic interfaces, and LED driver circuits requiring stable component supply, consistent h_FE binning, and SC−59 footprint compatibility.

Supply support for 2SA1162GT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2SA1162GT1 belongs to onsemi's general-purpose bipolar transistor product line, designed for cost-sensitive, space-constrained linear amplification and switching applications where reliability, consistent gain binning, and JEDEC-standard packaging are essential.

FAQ

What is the h_FE range for 2SA1162GT1?

The 2SA1162GT1 has a guaranteed DC current gain (h_FE) range of 200 to 400 when tested at V_CE = 6.0 Vdc and I_C = 2.0 mAdc. This G-grade binning ensures tighter gain consistency than broader-bin alternatives like the 2SA1015 series, simplifying bias network design for predictable amplifier performance. The 2SA1162GT1 datasheet specifies this range explicitly in the Electrical Characteristics table.

Is 2SA1162GT1 pin-compatible with 2SA1162YT1?

Yes, the 2SA1162GT1 and 2SA1162YT1 share identical SC−59 package dimensions, pinout (Emitter–Base–Collector on pins 1–2–3), and thermal characteristics. The only difference is h_FE binning: 2SA1162GT1 is G-grade (200–400), while 2SA1162YT1 is Y-grade (120–240). Both parts are fully interchangeable at the PCB level, though circuit gain stability may differ depending on the required h_FE minimum.

What is the maximum power dissipation of 2SA1162GT1 on a standard PCB?

The 2SA1162GT1 is rated for 200 mW maximum power dissipation under standard JEDEC conditions. While thermal modeling shows up to 338 mW is theoretically possible on FR-4 with ideal copper area (R_JA = 370°C/W), the official datasheet limits P_D to 200 mW to ensure reliability across manufacturing variations and ambient conditions. Derating is required above 25°C ambient per the Thermal Characteristics table.

Does 2SA1162GT1 support high-frequency signal amplification?

The 2SA1162GT1 has an f_T of 80 MHz, enabling usable gain in audio-band amplifiers (20 Hz–20 kHz) and moderate-speed switching applications up to ~5 MHz. It is not intended for RF or GHz-range operation. For higher-frequency use, designers should consider RF-optimized transistors such as the MMBT2907ALT1G (f_T = 200 MHz) or dedicated RF BJTs with optimized transition frequencies.

What is the recommended soldering profile for 2SA1162GT1?

The 2SA1162GT1, rated MSL 1, requires no pre-bake. Recommended reflow uses peak solder joint temperature of 205–219°C for 40–80 seconds, with ramp rates ≤100°C/min and cooling gradient ≤5°C/sec. Preheat to 150°C, soak at 150–160°C, then ramp to peak. The device's SC−59 package is compatible with standard leaded and lead-free profiles per J-STD-020, and thermal stress must be minimized to avoid latent failure.