Toshiba Semiconductor and Storage 2SA1162-O,LXHF

Overview

2SA1162-O,LXHF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial bipolar transistor designed for low-frequency and audio-frequency amplifier stages. It delivers VCEO = −50 V, IC(max) = −150 mA, hFE = 70–140 (O-class), NF = 1 dB (typ.), and operates in S-Mini package with pinout Base–Emitter–Collector. It serves as a general-purpose audio amplifier device in consumer audio preamplifier circuits.

For engineers reviewing the 2SA1162-O,LXHF datasheet, 2SA1162-O,LXHF pinout, 2SA1162-O,LXHF application, or 2SA1162-O,LXHF equivalent, key selection criteria include AEC-Q101 qualification status, hFE linearity (0.95 typ.), low-noise performance at 1 kHz, complementary pairing with 2SC2712, and S-Mini thermal derating behavior on FR4 boards.

Technical Context

This PNP transistor employs epitaxial base construction to achieve stable hFE linearity and low noise across collector currents from −0.1 mA to −100 mA. Its −50 V VCEO rating supports operation in split-rail audio supplies up to ±24 V, while the −150 mA IC(max) enables Class-A driver stage use without forced cooling.

The device exhibits fT = 80 MHz (typ.) and Cob = 4 pF (typ.), indicating suitability for bandwidth-limited audio signal paths but not RF applications. Its hFE classification O (70–140) ensures predictable DC bias stability in fixed-bias or emitter-degenerated amplifier topologies.

Key Specifications

Pinout & Package

S-Mini package (12 mg typ., 2.9 × 2.4 × 1.1 mm), surface-mount, JEDEC TO-236AB-compatible outline. Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Compared with 2SA1015-Y,LF and BC807-40,115, the 2SA1162-O,LXHF uniquely combines AEC-Q101 qualification, verified 1 dB noise figure, and exact S-Mini pin compatibility with legacy 2SA1162 designs-making it the sole option for automotive-repair and low-noise retrofits where form, fit, and function must match.

Availability

2SA1162-O,LXHF is available at Aetrix Electronics and suitable for audio preamplifier design, automotive cabin audio repair, and legacy electronics maintenance requiring stable component supply and long-term obsolescence mitigation.

Supply support for 2SA1162-O,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade validation.

The 2SA1162 series belongs to Toshiba's legacy bipolar transistor product line, engineered specifically for low-noise, linear audio amplification and general-purpose PNP switching in cost-sensitive, space-constrained applications.

FAQ

What is the hFE classification of 2SA1162-O,LXHF and how does it affect bias design?

The 2SA1162-O,LXHF has hFE classified as "O", meaning a guaranteed range of 70 to 140 at VCE = −6 V and IC = −2 mA. This moderate gain band enables predictable DC biasing in emitter-degenerated amplifiers without excessive sensitivity to unit-to-unit variation. Designers can use fixed-base resistors with ±10% tolerance and expect stable quiescent current across production lots. The 2SA1162-O,LXHF's hFE linearity further reduces distortion in small-signal operation.

Is 2SA1162-O,LXHF AEC-Q101 qualified and what does that cover?

Yes, 2SA1162-O,LXHF is explicitly AEC-Q101 qualified per the Toshiba datasheet Rev. 4.0.A. This qualification covers temperature cycling, high-temperature reverse bias (HTRB), and electrostatic discharge (ESD) testing per AEC-Q101-001 through -011 standards. It validates reliability for automotive cabin audio modules operating continuously at junction temperatures up to 125 °C, but does not extend to safety-critical systems like ADAS or powertrain control.

What is the maximum allowable collector power dissipation for 2SA1162-O,LXHF on a standard PCB?

At Ta = 25 °C, the 2SA1162-O,LXHF has PC = 200 mW (derated linearly above 25 °C). On a 25.4 mm × 25.4 mm × 1.6 mm FR4 board with three 0.8 mm² copper pads, the thermal resistance θJA is approximately 625 °C/W. Thus, at 70 °C ambient, the practical continuous dissipation drops to ~120 mW to maintain Tj ≤ 125 °C. Exceeding this risks accelerated parameter drift and reduced lifetime.

How does the noise figure of 2SA1162-O,LXHF compare to typical small-signal PNP transistors?

The 2SA1162-O,LXHF achieves NF = 1 dB (typ.) at 1 kHz with RG = 10 kΩ, which is among the lowest for production PNP transistors in the S-Mini package. Most comparable devices (e.g., BC807 series) specify only max NF (e.g., 10 dB), with no typ. value. This 1 dB typ. figure reflects optimized epitaxial base doping and geometry, making the 2SA1162-O,LXHF especially suitable for first-stage microphone preamps where noise dominates system SNR.

Can 2SA1162-O,LXHF be used as a direct replacement for older 2SA1162-O variants?

Yes, 2SA1162-O,LXHF is a drop-in replacement for legacy 2SA1162-O units in terms of electrical specs, S-Mini package dimensions, and pinout (Base–Emitter–Collector). The "LXHF" suffix denotes lead-free, halogen-free construction compliant with RoHS and JIS-C-0950, with identical thermal and electrical performance. No layout or schematic changes are required when upgrading from non-LF versions.