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Toshiba Semiconductor and Storage 2SA1162S-Y,LF
- Part No.:
- 2SA1162S-Y,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
2SA1162S-Y,LF.pdf
- Description:
- TRANS PNP 50V 0.15A S-MINI
- Quantity:
- Payment:
- Shipping:
Inventory:9,453
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Product details
Overview
2SA1162S-Y,LF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial bipolar transistor designed for low-frequency and audio-frequency amplifier stages. It delivers VCEO = −50 V, IC(max) = −150 mA, hFE = 120–240 (Y-grade), NF = 1 dB (typ.), and operates in S-Mini package with pinout Base–Emitter–Collector. It serves as a general-purpose audio amplifier device in consumer audio preamplifier circuits.
For engineers reviewing the 2SA1162S-Y,LF datasheet, 2SA1162S-Y,LF pinout, 2SA1162S-Y,LF application, or 2SA1162S-Y,LF equivalent, key selection considerations include its AEC-Q101 qualification for automotive use, hFE linearity ratio of 0.95 (typ.), low-noise performance at 1 kHz, and complementary pairing with 2SC2712 in push-pull configurations.
Technical Context
This PNP transistor employs epitaxial base construction to achieve stable hFE across collector current range and low noise figure at audio frequencies. Its VCEO and VCBO ratings are both −50 V, supporting operation in negative-rail amplifier topologies with moderate voltage headroom.
The device exhibits excellent hFE linearity-measured as hFE(IC = −0.1 mA)/hFE(IC = −2 mA) = 0.95 (typ.)-enabling low-distortion small-signal amplification. It is rated for PC = 200 mW on FR4 board (0.8 mm² Cu pad × 3), with Tj(max) = 150 °C and Tstg = −55 to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter reverse bias in common-emitter configuration |
| IC(max) | −150 mA: Continuous DC collector current limit before thermal derating applies |
| hFE Range | 120–240 (Y-grade): Guaranteed DC current gain at VCE = −6 V, IC = −2 mA |
| NF | 1 dB (typ.) at f = 1 kHz, RG = 10 kΩ: Low-noise performance critical for audio preamp stages |
| fT | 7 MHz (min): Transition frequency enabling stable gain up to mid-audio band |
| Cob | 4 pF (typ.) at VCB = −10 V: Output capacitance affecting high-frequency roll-off and stability |
| PC | 200 mW on specified FR4 board: Power dissipation limit under defined thermal conditions |
Pinout & Package
S-Mini package: surface-mount, 3-pin, 1.6 mm × 2.9 mm × 1.1 mm body, 12 mg typical weight, JEDEC TO-236AB compatible footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input node; requires external bias network for active-region operation |
| 2 | Emitter | Common terminal in common-base/common-collector configurations; connected to most-negative rail in PNP amplifiers |
| 3 | Collector | Output current sink node; carries full load current and dissipates power during conduction |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including infotainment preamplifiers and sensor signal conditioning |
| hFE linearity ratio | 0.95 (typ.): Enables low THD in Class-A audio amplifiers without feedback compensation |
| Complementary pairing | Matched electrical characteristics with 2SC2712 (NPN) for push-pull output stages |
| Low noise figure | 1 dB (typ.) at 1 kHz: Supports high-fidelity signal amplification in microphone and phono preamps |
Applications
| Audio Preamp Stage | Automotive Infotainment Input |
|---|---|
Use Scenario: Amplifying low-level analog signals from microphones or phono cartridges prior to ADC or power amplification. IC Role / Device Role / Timing Role: Small-signal PNP amplifier in common-emitter configuration with emitter degeneration. Use Value: 1 dB (typ.) noise figure and 0.95 hFE linearity ratio minimize audible distortion and preserve signal integrity. | Use Scenario: Signal conditioning front-end in OEM car radio tuner modules or Bluetooth audio receivers. IC Role / Device Role / Timing Role: AEC-Q101-qualified PNP gain stage handling line-level inputs in harsh-temperature automotive environments. Use Value: Rated for Tstg = −55 to +150 °C and qualified per AEC-Q101, ensuring reliability over vehicle lifetime. |
| General-Purpose LF Amplifier | Complementary Push-Pull Driver |
Use Scenario: DC-coupled gain block in industrial sensor interface circuits requiring stable bias and low drift. IC Role / Device Role / Timing Role: Linear amplifier operating at IC = −2 mA with hFE = 120–240 (Y-grade) for predictable transconductance. Use Value: Tight hFE binning and −50 V VCEO support robust operation in unregulated supply rails. | Use Scenario: Upper leg of Class-B/AB output stage paired with 2SC2712 in discrete audio power amplifiers. IC Role / Device Role / Timing Role: Complementary PNP switch/amplifier matched to 2SC2712 for symmetrical drive and crossover distortion reduction. Use Value: Verified complementary characteristics enable balanced current sourcing/sinking and thermal tracking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP bipolar transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SA1037AK-TL-E | hFE = 120–270, VCEO = −50 V, SOT-323 package, NF = 10 dB (max) at 1 kHz | Higher max noise figure; smaller package limits power dissipation (150 mW) | Preferred where board space is constrained and noise requirements are less stringent |
| BC807-25,215 | hFE = 160–400, VCEO = −45 V, SOT-23 package, NF not specified in datasheet | Lower breakdown voltage; no published noise data; RoHS-compliant but not AEC-Q101 qualified | Acceptable for non-automotive general-purpose amplification where AEC-Q101 is not required |
Compared with 2SA1162S-Y,LF, the 2SA1037AK-TL-E offers comparable hFE and voltage rating in a smaller footprint but trades off guaranteed low-noise performance, while BC807-25,215 provides wider hFE spread and higher gain but lacks AEC-Q101 validation and noise specification-making it unsuitable for automotive audio front-ends.
Availability
2SA1162S-Y,LF is available at Aetrix Electronics and suitable for audio preamplifier design, automotive infotainment signal conditioning, and general-purpose low-frequency amplifier circuits requiring stable component supply and long-term lifecycle support.
Supply support for 2SA1162S-Y,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, automotive qualification, and industrial robustness.
The 2SA1162S-Y,LF belongs to Toshiba's legacy bipolar transistor product line, engineered specifically for low-noise, linear amplification in audio and automotive signal-path applications since 1982.
FAQ
What is the hFE grade classification for 2SA1162S-Y,LF?
The "Y" suffix in 2SA1162S-Y,LF denotes the hFE bin: 120 to 240 at VCE = −6 V and IC = −2 mA. This grade ensures predictable current gain for precision biasing in linear amplifier designs and is verified per Toshiba's production test flow.
Is 2SA1162S-Y,LF qualified for automotive applications?
Yes, 2SA1162S-Y,LF is AEC-Q101 qualified, as confirmed in Toshiba's orderable part number list. It meets stress-test requirements for temperature cycling, humidity, and mechanical shock, making it suitable for automotive infotainment and body control module signal paths.
What is the pinout configuration of 2SA1162S-Y,LF in the S-Mini package?
The 2SA1162S-Y,LF uses a standardized S-Mini (TO-236AB) pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches JEDEC MO-001AC and is consistent across all 2SA1162 variants including -O, -Y, and -GR suffixes.
Does 2SA1162S-Y,LF have a specified noise figure at frequencies other than 1 kHz?
No-Toshiba specifies noise figure only at 1 kHz (NF = 1 dB typ., 10 dB max) with RG = 10 kΩ. No noise data is provided at higher frequencies in the official datasheet Rev. 4.0.A, so designers should rely on measured data or simulation for >10 kHz applications.
How does the hFE linearity of 2SA1162S-Y,LF impact amplifier design?
The hFE linearity ratio of 0.95 (typ.)-calculated as hFE at −0.1 mA divided by hFE at −2 mA-reduces harmonic distortion in Class-A amplifiers. This allows simpler bias networks and less dependence on global negative feedback when using 2SA1162S-Y,LF in high-fidelity audio stages.
2SA1162S-Y,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Cut Tape (CT)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 150 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 2mA, 6V
- Power - Max:
- 150 mW
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- S-Mini
2SA1162S-Y,LF FAQ
1.How can I place an order for 2SA1162S-Y,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SA1162S-Y,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SA1162S-Y,LF reliable?
The price and inventory of 2SA1162S-Y,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1162S-Y,LF is usually 5 days.
3.What payment methods are accepted for 2SA1162S-Y,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1162S-Y,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SA1162S-Y,LF?
2SA1162S-Y,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SA1162S-Y,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SA1162S-Y,LF?
For technical support, including 2SA1162S-Y,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1162S-Y,LF requirements.
6.How does Aetrix verify that 2SA1162S-Y,LF is sourced from the original manufacturer or authorized distributors?
All 2SA1162S-Y,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1162S-Y,LF meets industry standards.
7.What is the process for return or replacement of 2SA1162S-Y,LF?
All 2SA1162S-Y,LF units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1162S-Y,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SA1162S-Y,LF part is unused and in its original packaging.
Return procedure for 2SA1162S-Y,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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