Toshiba Semiconductor and Storage 2SA1162-Y,LXHF

Overview

2SA1162-Y,LXHF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial bipolar transistor designed for low-frequency and audio-frequency general-purpose amplifier applications. It delivers VCEO = −50 V, IC(max) = −150 mA, hFE = 120–240 (Y-grade), NF = 1 dB (typ.), and is AEC-Q101 qualified for automotive use.

For engineers reviewing the 2SA1162-Y,LXHF datasheet, 2SA1162-Y,LXHF pinout, 2SA1162-Y,LXHF application, or 2SA1162-Y,LXHF equivalent, key selection criteria include its complementary pairing with 2SC2712, S-Mini package compatibility, low-noise audio amplification capability, and automotive-grade reliability validation.

Technical Context

This PNP transistor operates in linear active mode for analog signal amplification, with verified hFE linearity (hFE@−0.1 mA / hFE@−2 mA = 0.95 typ.) ensuring minimal distortion across bias currents. Its −50 V VCEO and −5 V VEBO ratings support robust operation in split-rail audio stages and low-voltage power control circuits.

The device exhibits fT = 80 MHz (min) and Cob = 7 pF (max) at VCB = −10 V, enabling stable gain up to mid-audio frequencies while maintaining low capacitive loading on preceding stages. Noise figure of 1 dB (typ.) at 1 kHz confirms suitability for high-fidelity preamplifier inputs.

Key Specifications

Pinout & Package

S-Mini package (JEDEC TO-236AB), 3-pin surface-mount plastic case weighing 12 mg (typ.). Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector - validated per Toshiba Rev.4.0.A datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Compared with 2SA1037AK-TL-E and BC807-25,215, the 2SA1162-Y,LXHF provides verified automotive qualification, superior noise performance (1 dB vs. 10 dB max), and tighter hFE linearity-making it the preferred choice for mission-critical audio and power control in harsh environments.

Availability

2SA1162-Y,LXHF is available at Aetrix Electronics and suitable for audio pre-amplifiers, automotive cabin amplifiers, and industrial sensor signal conditioning requiring stable component supply and long-term lifecycle assurance.

Supply support for 2SA1162-Y,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade validation.

The 2SA1162-Y,LXHF belongs to Toshiba's legacy S-Mini bipolar transistor family, engineered specifically for low-noise, high-linearity analog amplification in automotive and industrial audio systems since 1982.

FAQ

What is the hFE classification for 2SA1162-Y,LXHF?

The "Y" suffix in 2SA1162-Y,LXHF denotes hFE = 120–240 at VCE = −6 V and IC = −2 mA, per Toshiba Rev.4.0.A datasheet Note 5. This grading ensures consistent DC biasing in production amplifier circuits and distinguishes it from O-grade (70–140) and GR-grade (200–400) variants. The 2SA1162-Y,LXHF maintains this range across operating temperatures from −55 °C to 125 °C.

Is 2SA1162-Y,LXHF qualified for automotive applications?

Yes, 2SA1162-Y,LXHF is explicitly AEC-Q101 qualified, as confirmed in the "Orderable part number" table of the Toshiba datasheet (Rev.4.0.A). This qualification covers temperature cycling, humidity testing, and mechanical shock validation required for under-hood and cabin-mounted electronics. The 2SA1162-Y,LXHF is designated for automotive use, unlike LF- or GR-suffixed variants intended for general-purpose applications.

What is the pin configuration of 2SA1162-Y,LXHF?

The 2SA1162-Y,LXHF uses the S-Mini (TO-236AB) package with Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector - documented in the "Packaging" section of the Toshiba datasheet. This pinout is identical across all 2SA1162 orderable variants, including 2SA1162-Y,LXHF, and matches industry-standard SOT-23 orientation when viewed from the top with marking dot left-aligned.

How does the noise figure of 2SA1162-Y,LXHF compare to similar PNP transistors?

The 2SA1162-Y,LXHF achieves NF = 1 dB (typ.) at 1 kHz with RG = 10 kΩ, significantly lower than typical alternatives like BC807-25 (NF = 10 dB max) or 2SA1037AK (NF = 10 dB max). This 9 dB advantage directly improves signal-to-noise ratio in microphone preamps and sensor interfaces. The 2SA1162-Y,LXHF's low-noise design stems from optimized epitaxial base doping and geometry, validated in Toshiba's characterization data.

What complementary NPN transistor pairs with 2SA1162-Y,LXHF?

The 2SA1162-Y,LXHF is explicitly complementary to the 2SC2712 NPN transistor, as stated in the "Features" section of the Toshiba datasheet. Both share matched VCEO (−50 V / +50 V), IC(max) (−150 mA / +150 mA), hFE ranges, and S-Mini packaging-enabling symmetrical push-pull output stages. This pairing is validated for audio amplifier designs and referenced in Toshiba application notes for Class-AB topology implementation using 2SA1162-Y,LXHF and 2SC2712.