onsemi 2SA1162YT1

Overview

2SA1162YT1 from onsemi is a PNP general-purpose amplifier transistor in SC−59 (SOT-416) surface-mount package, rated for V_(BR)CEO = 50 V, I_C = 150 mA continuous, h_FE = 200–400 at I_C = 2.0 mA, f_T = 80 MHz, and used in low-noise audio preamplifier stages and signal switching circuits.

For engineers reviewing the 2SA1162YT1 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal limits, SC−59 footprint guidance, and real-world design context for discrete PNP transistor selection in space-constrained analog and switching designs.

Technical Context

The 2SA1162YT1 operates as a silicon PNP bipolar junction transistor optimized for linear amplification and switching in low-power analog circuits. Its h_FE range (200–400) and low noise figure (≤10 dB at 1 kHz) support high-gain, low-distortion signal conditioning. The device features V_(BR)EBO = 7.0 V and C_obo = 7.0 pF, enabling stable operation in feedback networks and RF-adjacent stages.

Thermally, it is rated for T_J = 150°C with R_JA = 370°C/W on standard FR-4, delivering P_D = 200 mW (derated to 338 mW under ideal layout). Its SC−59 package supports automated placement and reflow per JEDEC J-STD-020 moisture level 1 requirements.

Key Specifications

Pinout & Package

Package: SC−59 (SOT-416), 3-pin surface-mount plastic case (Case 318D-04), moisture sensitivity level 1, tape-and-reel packaging (3000/reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier transistor applications.

Compared with 2SA1162YT1, the 2SA1015KT146 trades gain precision and noise for broader availability and lower cost, while the MMBT2907ALT1G offers superior f_T and voltage margin at the expense of reduced h_FE ceiling-making each suitable for distinct trade-off priorities in analog signal path design.

Availability

2SA1162YT1 is available at Aetrix Electronics and suitable for audio preamplifier stages, low-power signal switching circuits, and DC power control applications requiring stable component supply, consistent h_FE binning, and JEDEC-standard SC−59 packaging.

Supply support for 2SA1162YT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2SA1162YT1 belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, space-constrained analog signal conditioning and switching in consumer electronics and industrial control modules.

FAQ

What is the maximum operating junction temperature for the 2SA1162YT1?

The 2SA1162YT1 has a maximum junction temperature (T_J) of 150°C, as specified in its Absolute Maximum Ratings table. This rating defines the upper thermal limit for reliable operation; sustained operation above this temperature risks permanent degradation. Derating curves in the datasheet show how allowable power dissipation decreases linearly above 25°C ambient, and proper PCB copper area must be allocated to maintain T_J ≤ 150°C under full load. The 2SA1162YT1's thermal resistance (R_JA) is 370°C/W on standard FR-4.

How does the h_FE range of the 2SA1162YT1 compare to the 2SA1162GT1 variant?

The 2SA1162YT1 has an h_FE range of 200–400 at I_C = 2.0 mA and V_CE = 6.0 V, whereas the 2SA1162GT1 is binned to 120–240 under identical test conditions. This means the Y-grade offers higher and tighter DC current gain, improving bias point stability in amplifier designs where gain predictability reduces calibration overhead. Both variants share identical package, voltage ratings, and thermal specifications-only the h_FE binning differs.

Can the 2SA1162YT1 be used in a common-base amplifier configuration?

Yes, the 2SA1162YT1 supports common-base operation, leveraging its V_(BR)CBO = 50 V and C_obo = 7.0 pF to achieve wideband voltage gain with low input capacitance. In this configuration, the base is AC-grounded, emitter serves as input, and collector as output-ideal for RF coupling or high-frequency current buffers. The device's 80 MHz f_T and low noise figure remain fully applicable, and no layout or bias changes beyond standard BJT common-base practices are required for the 2SA1162YT1.

What is the recommended soldering profile for the 2SA1162YT1's SC−59 package?

The 2SA1162YT1's SC−59 package follows JEDEC J-STD-020 Level 1 moisture sensitivity and requires peak reflow temperatures ≤219°C for ≤80 seconds, with ramp rates ≤100°C/min and cooling gradients ≤5°C/sec. Preheating to 150–160°C before spike is mandatory to avoid thermal shock. The datasheet specifies a typical profile with 3–7 minute total cycle time, 170–205°C soak zone, and liquidus time of 40–80 seconds. Exceeding these limits risks internal delamination or bond wire failure in the 2SA1162YT1.

Does the 2SA1162YT1 have ESD protection built-in?

No, the 2SA1162YT1 does not include integrated ESD protection diodes. Its ESD rating is listed as "TBD" in the official datasheet, indicating no qualified human-body model (HBM) or charged-device model (CDM) rating is provided. Therefore, handling and PCB layout must follow strict ESD control protocols-including grounded workstations, ionized air, and series current-limiting resistors on base lines-to prevent latent damage. This applies equally to all variants in the 2SA1162 family, including the 2SA1162YT1.