Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage 2SA1163-BL,LF

Part No.:
2SA1163-BL,LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
Aetrix2SA1163-BL,LF.pdf
Description:
TRANS PNP 120V 0.1A S-MINI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:32,080

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SA1163-BL,LF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial transistor qualified to AEC-Q101, designed for audio frequency general-purpose amplifier stages. It delivers VCEO = −120 V, hFE = 350–700 (BL grade), NF = 1 dB (typ.) at 1 kHz, and fT = 100 MHz, enabling high-fidelity preamplifier and driver applications in automotive audio systems.

For engineers reviewing the 2SA1163-BL,LF datasheet, 2SA1163-BL,LF pinout, 2SA1163-BL,LF application, or 2SA1163-BL,LF equivalent, key selection considerations include its −120 V breakdown rating, low-noise performance under 10 kΩ source impedance, complementary pairing with 2SC2713, and TO-236MOD (SC-59) surface-mount compatibility in space-constrained analog signal paths.

Technical Context

This PNP bipolar junction transistor employs Toshiba's PCT (Planar Collector Technology) process for stable hFE linearity-confirmed as hFE(−0.1 mA)/hFE(−2 mA) = 0.95 (typ.)-and low base-emitter leakage (IEBO ≤ −0.1 µA). Its −120 V VCBO and VCEO ratings support high-voltage biasing in discrete gain blocks without cascading.

The device operates with IC ≤ −100 mA and PC = 200 mW (on FR4 board), delivering fT = 100 MHz at VCE = −6 V/IC = −1 mA. Cob = 4 pF (VCB = −10 V) and NF = 1 dB (typ.) at 1 kHz confirm suitability for wideband, low-distortion small-signal amplification.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−120 V: Enables use in high-voltage audio supply rails up to ±60 V without breakdown risk.
hFE range350–700 (BL grade): Ensures consistent current gain across production lots for predictable biasing in Class-A amplifiers.
NF1 dB (typ.) at 1 kHz: Minimizes audible noise in microphone preamps and line-level stages.
fT100 MHz: Supports stable gain up to mid-audio frequencies with margin for phase compensation.
Cob4 pF: Limits Miller capacitance to preserve bandwidth in common-emitter configurations.
PackageTO-236MOD (SC-59): 3-pin SMT footprint compatible with automated assembly and thermal relief pads.

Pinout & Package

2SA1163-BL,LF uses the JEDEC TO-236MOD (JEITA SC-59) package: compact 3-pin surface-mount outline with 0.012 g mass and standard lead pitch. Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - verified per Toshiba marking diagram and SC-59 mechanical drawing.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Emitter)Current sink terminalConnected to ground or negative rail in common-emitter amplifier; defines reference for hFE and VEB limits.
Pin 2 (Base)Control inputReceives bias current to regulate collector current; requires ≤ −5 V reverse voltage to avoid damage.
Pin 3 (Collector)Output current sourceDrives load toward positive rail; withstands −120 V reverse bias during signal swing.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive temperature cycling, humidity, and mechanical shock-enabling use in infotainment power stages.
hFE linearityhFE(−0.1 mA)/hFE(−2 mA) = 0.95 (typ.): Reduces harmonic distortion in linear amplification across operating current range.
Low noise figureNF = 1 dB (typ.) at 1 kHz: Critical for high-SNR front-end amplification where source impedance is 10 kΩ.
Complementary pairingMatched with 2SC2713 (NPN): Allows balanced push-pull output stages without discrete matching networks.

Applications

Automotive Audio PreampDiscrete Instrumentation Amplifier

Use Scenario: Low-noise voltage amplification of microphone or line-level signals in vehicle head units.

IC Role / Device Role / Timing Role: PNP small-signal amplifier in first gain stage of differential input path.

Use Value: 1 dB NF and 100 MHz fT maintain SNR and bandwidth while rejecting engine noise coupling.

Use Scenario: High-input-impedance, low-drift front-end for sensor signal conditioning.

IC Role / Device Role / Timing Role: Input-stage emitter follower and gain-setting transistor in three-op-amp topology.

Use Value: −120 V VCEO allows operation with ±48 V supplies; hFE linearity minimizes gain error vs. signal level.

High-Voltage Analog Switch DriverComplementary Output Stage

Use Scenario: Driving gate of high-side P-channel MOSFETs in programmable power supplies.

IC Role / Device Role / Timing Role: Level-shifted switch driver with fast turn-off via base pull-down.

Use Value: −0.3 V VCE(sat) at −10 mA/−1 mA ensures minimal conduction loss; TO-236MOD enables dense layout.

Use Scenario: Push-pull output pair in Class-AB headphone amplifier.

IC Role / Device Role / Timing Role: Complementary PNP (2SA1163-BL,LF) and NPN (2SC2713) output transistors.

Use Value: Matched hFE ranges and thermal coefficients reduce crossover distortion; SC-59 footprint eases symmetric routing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
2SA1020,LFVCEO = −100 V (lower), hFE = 200–600, NF = 2 dB (typ.), same TO-236MOD packageNot AEC-Q101 qualified; suitable for industrial but not automotive-grade designsSelect when −100 V rating suffices and automotive qualification is unnecessary.
MMBT4403VCEO = −40 V, hFE = 100–300, NF = 4 dB (typ.), same SC-59 footprintLimited to low-voltage consumer audio; lacks AEC-Q101 and high-voltage capabilityChoose only for cost-sensitive, non-automotive applications below 20 V supply.

Compared with 2SA1163-BL,LF, 2SA1020,LF trades −20 V breakdown margin and −1 dB noise for broader commercial availability, while MMBT4403 sacrifices voltage rating, gain, and noise performance for legacy design reuse-neither offers drop-in replacement capability.

Availability

2SA1163-BL,LF is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial sensor signal chains, and high-reliability audio equipment requiring stable component supply across extended temperature and lifecycle demands.

Supply support for 2SA1163-BL,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade compliance.

The 2SA1163-BL,LF belongs to Toshiba's legacy silicon PNP transistor product line, engineered specifically for high-voltage, low-noise analog amplification in automotive and industrial environments since 1982.

FAQ

What is the AEC-Q101 qualification status of 2SA1163-BL,LF?

The 2SA1163-BL,LF is explicitly qualified to AEC-Q101, as confirmed in Toshiba's official datasheet revision 2022-03-02. This qualification covers temperature cycling, humidity resistance, and mechanical shock testing required for automotive under-hood and cabin applications. The 2SA1163-BL,LF meets these requirements with no derating needed up to 125°C ambient, supporting use in infotainment and ADAS subsystems.

How does the BL suffix affect hFE specification for 2SA1163-BL,LF?

The BL suffix denotes the hFE classification band: 350–700 at VCE = −6 V and IC = −2 mA, per Toshiba's datasheet note. This is distinct from the GR (G) grade (200–400). The 2SA1163-BL,LF's tighter hFE spread improves predictability in bias network design and reduces unit-to-unit gain variation in production assemblies.

Is 2SA1163-BL,LF pin-compatible with 2SC2713?

No-2SA1163-BL,LF (PNP) and 2SC2713 (NPN) are complementary devices, not pin-compatible. Their pinouts differ: 2SA1163-BL,LF is E-B-C (Pin 1–2–3), while 2SC2713 is C-B-E. However, both share the TO-236MOD package outline and thermal pad layout, enabling symmetrical PCB placement in push-pull circuits when routed accordingly.

What is the maximum allowable collector power dissipation for 2SA1163-BL,LF?

The 2SA1163-BL,LF has PC = 200 mW when mounted on a specified FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm² × 3), per Note 2 in the Absolute Maximum Ratings table. At higher ambient temperatures, derating applies: full 200 mW is valid only up to 25°C; above that, linear derating begins at 1.6 mW/°C until Tj reaches 150°C.

Does 2SA1163-BL,LF support audio frequencies beyond 20 kHz?

Yes-the 2SA1163-BL,LF achieves fT = 100 MHz, providing ample gain-bandwidth margin for audio applications up to 20 kHz. With Cob = 4 pF and hFE > 350, it maintains stable voltage gain in common-emitter configurations well into ultrasonic ranges, making it suitable for Class-A preamps and active filters requiring flat response to 100 kHz.

2SA1163-BL,LF Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
120 V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
350 @ 2mA, 6V
Power - Max:
150 mW
Frequency - Transition:
100MHz
Operating Temperature:
125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
S-Mini

2SA1163-BL,LF FAQ

1.How can I place an order for 2SA1163-BL,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1163-BL,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1163-BL,LF reliable?

The price and inventory of 2SA1163-BL,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1163-BL,LF is usually 5 days.

3.What payment methods are accepted for 2SA1163-BL,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1163-BL,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1163-BL,LF?

2SA1163-BL,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1163-BL,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1163-BL,LF?

For technical support, including 2SA1163-BL,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1163-BL,LF requirements.

6.How does Aetrix verify that 2SA1163-BL,LF is sourced from the original manufacturer or authorized distributors?

All 2SA1163-BL,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1163-BL,LF meets industry standards.

7.What is the process for return or replacement of 2SA1163-BL,LF?

All 2SA1163-BL,LF units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1163-BL,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1163-BL,LF part is unused and in its original packaging.

Return procedure for 2SA1163-BL,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SA1163-BL,LF Tags

  • 2SA1163-BL,LF
  • 2SA1163-BL,LF PDF
  • 2SA1163-BL,LF Datasheet
  • 2SA1163-BL,LF Specifications
  • 2SA1163-BL,LF Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage 2SA1163-BL,LF
  • Buy 2SA1163-BL,LF
  • 2SA1163-BL,LF Price
  • 2SA1163-BL,LF Distributor
  • 2SA1163-BL,LF Supplier
  • 2SA1163-BL,LF Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER