Toshiba Semiconductor and Storage 2SA1163-GR,LF

Overview

2SA1163-GR,LF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial transistor designed for audio-frequency general-purpose amplifier applications. It features VCEO = −120 V, hFE = 200–400 (GR grade), NF = 1 dB (typ.), fT = 100 MHz, and TO-236MOD (SC-59) package. Used in high-voltage audio preamplifier stages requiring linearity and low noise.

For engineers reviewing the 2SA1163-GR,LF datasheet, 2SA1163-GR,LF pinout, 2SA1163-GR,LF application, or 2SA1163-GR,LF equivalent, key selection criteria include guaranteed hFE linearity (0.95 typ.), AEC-Q101 qualification status, low-noise performance at 1 kHz, complementary pairing with 2SC2713, and thermal derating behavior on FR4 boards.

Technical Context

This PNP bipolar junction transistor employs Toshiba's PCT (Planar Collector Technology) process to achieve stable hFE linearity across collector current range (−0.1 mA to −2 mA) and low noise figure under small-signal conditions. Its −120 V VCEO rating supports operation in high-voltage analog signal chains without breakdown risk.

The device operates in common-emitter configuration with fT = 100 MHz at VCE = −6 V and IC = −1 mA, enabling use up to mid-audio frequencies with predictable gain roll-off. Cob = 4 pF at VCB = −10 V ensures minimal Miller effect in amplifier feedback networks.

Key Specifications

Pinout & Package

Package: TO-236MOD (JEDEC), SC-59 (JEITA), Toshiba 2-3F1A - surface-mount, 3-terminal plastic package weighing 0.012 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP audio amplifier applications.

Compared with 2SA1163-GR,LF, 2SA1084-GR,LF trades AEC-Q101 compliance and lower noise for reduced voltage rating, while MPSA92-AP offers higher breakdown voltage in a less compact, non-qualified through-hole form factor-neither is pin-compatible, and both require layout revision.

Availability

2SA1163-GR,LF is available at Aetrix Electronics and suitable for audio preamplifier circuits, automotive infotainment front-ends, and high-voltage sensor interface designs requiring stable component supply and long-term manufacturability.

Supply support for 2SA1163-GR,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade validation.

The 2SA1163-GR,LF belongs to Toshiba's legacy silicon PNP transistor product line, engineered specifically for high-linearity, low-noise audio-frequency amplification in space-constrained surface-mount applications.

FAQ

What is the hFE classification for 2SA1163-GR,LF?

The "GR" suffix in 2SA1163-GR,LF denotes the hFE bin of 200–400 at VCE = −6 V and IC = −2 mA. This tight gain range ensures predictable DC biasing in amplifier circuits and supports consistent performance across production lots. The 2SA1163-GR,LF datasheet confirms this classification in its Electrical Characteristics table under the hFE note.

Is 2SA1163-GR,LF AEC-Q101 qualified?

Yes, 2SA1163-GR,LF is explicitly stated as AEC-Q101 qualified in Toshiba's official documentation. This qualification applies to devices with ordering part numbers ending in "LF", as noted in the Absolute Maximum Ratings section. The 2SA1163-GR,LF meets stress test requirements for automotive ambient temperature, humidity, and mechanical shock environments.

What package does 2SA1163-GR,LF use?

2SA1163-GR,LF uses the TO-236MOD package (JEDEC), also designated SC-59 (JEITA) and Toshiba 2-3F1A. It is a three-terminal, surface-mount plastic package with 0.95 mm pitch, 2.9 mm × 1.3 mm footprint, and 0.012 g typical weight. Pin assignment is E-B-C, confirmed by Toshiba's package outline drawings and marking diagram.

How does 2SA1163-GR,LF complement 2SC2713?

2SA1163-GR,LF is the designated PNP complement to the NPN 2SC2713, sharing matched electrical characteristics including hFE range, VCEO rating, Cob, and thermal profile. This pairing enables symmetrical differential amplifiers and push-pull output stages. The 2SA1163-GR,LF datasheet explicitly states "Complementary to 2SC2713" in its Features section.

What is the maximum allowable collector power dissipation for 2SA1163-GR,LF on FR4?

The maximum collector power dissipation for 2SA1163-GR,LF is 200 mW when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm with 0.8 mm² Cu pads × 3), per Note 2 in the Absolute Maximum Ratings table. Derating begins above Ta = 25°C, reaching zero dissipation at Ta ≈ 150°C (Tj = 150°C limit). This value is strictly applicable only to the LF-suffixed variant.