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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA1179N6-TB-E

Name: 2SA1179N6-TB-E
Brand: onsemi
SKU: 2SA1179N6-TB-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA1179N6-TB-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2SA1179N6-TB-E.pdf

Description:: TRANS PNP 50V 0.15A 3-CP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SA1179N6-TB-E from onsemi is a PNP bipolar junction transistor in CPA (SC-59/TO-236AB) package, rated for −50 V V_CEO, −150 mA I_C, and low −0.15 V typical V_CE(sat) at −50 mA/−5 mA drive. It delivers 200–400 h_FE at −6 V V_CE, −10 mA I_C, and supports high-frequency amplification with 180 MHz f_T. It is used in compact DC-DC converter bias circuits and low-power linear regulators.

For engineers reviewing the 2SA1179N6-TB-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, guaranteed −50 V breakdown, confirmed −0.5 V max V_CE(sat) under production conditions, SC-59 footprint compatibility, and h_FE binning to Rank 6 (200–400).

Technical Context

The 2SA1179N6-TB-E operates as a general-purpose PNP switching and amplification device with fixed emitter-base and collector-base junction structures. Its −55 V V_CBO and −5 V V_EBO ratings support robust voltage margin in negative-rail interface stages, while its 200 mW P_C rating defines thermal limits on glass-epoxy PCBs.

It exhibits low output capacitance (3.0 pF typ Cob at −6 V V_CB) and fast switching response enabled by 180 MHz f_T at −6 V V_CE, −10 mA I_C. The device is characterized across −25°C to +75°C ambient and specified with −0.1 μA max I_CBO at −35 V V_CB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum allowable collector-emitter voltage before breakdown in common-emitter configuration
I_C	−150 mA - Continuous DC collector current rating defining safe linear/switching operation
V_CE(sat)	−0.15 V typ / −0.5 V max at −50 mA I_C, −5 mA I_B - Low saturation voltage enabling efficient switching in low-voltage PNP driver stages
h_FE	200–400 at −6 V V_CE, −10 mA I_C - Guaranteed DC current gain range for Rank 6 binning, supporting predictable base drive design
f_T	180 MHz at −6 V V_CE, −10 mA I_C - Unity-gain bandwidth confirming suitability for RF preamp and oscillator buffer roles up to ~100 MHz
C_ob	3.0 pF typ at −6 V V_CB, 1 MHz - Low output capacitance minimizing Miller effect in high-speed switching applications
P_C	200 mW at T_a = 25°C - Power dissipation limit dictating heatsinking requirements on standard FR-4 or glass-epoxy boards

Pinout & Package

2SA1179N6-TB-E uses the CPA package (JEITA SC-59 / JEDEC TO-236AB), a 3-pin surface-mount plastic case measuring 2.93 × 1.90 × 0.95 mm with 0.55 mm lead pitch. The package is Pb-free and compatible with reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased PNP operation; requires negative base current relative to emitter to turn on
2	Emitter	Current source terminal in PNP configuration; connected to higher potential rail in typical switch layouts
3	Collector	Current sink terminal; connects to load or lower-potential node; carries full switched current

Key Features

Feature	Design Value
Low V_CE(sat)	−0.15 V typical enables <100 mW conduction loss at −50 mA, critical for battery-powered PNP switch efficiency
High V_CBO	−55 V rating provides 10% voltage margin above −50 V V_CEO, improving reliability in transient-prone power rails
Rank 6 h_FE binning	200–400 gain range ensures consistent base resistor sizing across production lots without recalibration
Miniature CPA footprint	2.93 × 1.90 mm outline allows placement in space-constrained DC-DC feedback networks and sensor signal conditioning
Low Cob	3.0 pF output capacitance reduces high-frequency phase shift in amplifier stages and improves switching edge fidelity

Applications

Power Supply Feedback Control	Low-Voltage PNP Switch
Use Scenario: Regulating output voltage in isolated flyback converters using optocoupler-coupled feedback loop. IC Role / Device Role / Timing Role: PNP transistor amplifying error signal from TL431 shunt regulator to drive optocoupler LED. Use Value: −0.15 V V_CE(sat) minimizes voltage drop across transistor, preserving headroom for optocoupler forward voltage and ensuring stable regulation down to 3.3 V outputs.	Use Scenario: Enabling/disabling 5 V logic rail in portable instrumentation with microcontroller GPIO. IC Role / Device Role / Timing Role: Low-side PNP switch controlling power to analog front-end circuitry. Use Value: Rank 6 h_FE guarantees sufficient current gain to fully saturate with 1 mA GPIO drive, eliminating need for external base resistors in many designs.
Audio Signal Inversion	Current Mirror Reference
Use Scenario: Inverting small-signal audio in headphone driver stage of portable audio codec. IC Role / Device Role / Timing Role: Common-emitter PNP amplifier providing 180° phase inversion with minimal distortion. Use Value: 180 MHz f_T ensures flat gain response across 20 Hz–20 kHz band; low Cob prevents high-frequency roll-off in AC-coupled configurations.	Use Scenario: Building matched current mirror for bias generation in precision op-amp input stage. IC Role / Device Role / Timing Role: PNP transistor paired with identical unit for accurate current replication. Use Value: Tight h_FE binning (200–400) and low I_CBO (≤0.1 μA) reduce mirror ratio error and temperature drift in low-current (<100 μA) reference paths.

Power Supply Feedback Control

Low-Voltage PNP Switch

Use Scenario: Regulating output voltage in isolated flyback converters using optocoupler-coupled feedback loop.

IC Role / Device Role / Timing Role: PNP transistor amplifying error signal from TL431 shunt regulator to drive optocoupler LED.

Use Value: −0.15 V V_CE(sat) minimizes voltage drop across transistor, preserving headroom for optocoupler forward voltage and ensuring stable regulation down to 3.3 V outputs.

Use Scenario: Enabling/disabling 5 V logic rail in portable instrumentation with microcontroller GPIO.

IC Role / Device Role / Timing Role: Low-side PNP switch controlling power to analog front-end circuitry.

Use Value: Rank 6 h_FE guarantees sufficient current gain to fully saturate with 1 mA GPIO drive, eliminating need for external base resistors in many designs.

Audio Signal Inversion

Current Mirror Reference

Use Scenario: Inverting small-signal audio in headphone driver stage of portable audio codec.

IC Role / Device Role / Timing Role: Common-emitter PNP amplifier providing 180° phase inversion with minimal distortion.

Use Value: 180 MHz f_T ensures flat gain response across 20 Hz–20 kHz band; low Cob prevents high-frequency roll-off in AC-coupled configurations.

Use Scenario: Building matched current mirror for bias generation in precision op-amp input stage.

IC Role / Device Role / Timing Role: PNP transistor paired with identical unit for accurate current replication.

Use Value: Tight h_FE binning (200–400) and low I_CBO (≤0.1 μA) reduce mirror ratio error and temperature drift in low-current (<100 μA) reference paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1037AK-TL-E	Same CPA package, but −60 V V_CEO, −100 mA I_C, 120 MHz f_T, and h_FE 120–270 (Rank K)	Lower current and gain; better suited for ultra-low-power biasing than medium-current switching	Select when higher voltage margin is required and load current stays below 100 mA
BC807-25,215	SC-70 package (smaller), −45 V V_CEO, −500 mA I_C, 100 MHz f_T, h_FE 160–400	Higher current capability but larger Cob (12 pF) and different footprint; not drop-in replaceable	Choose for higher-current loads where board area permits SC-70 and thermal design accommodates 310 mW P_C

Compared with 2SA1179N6-TB-E, the 2SA1037AK-TL-E trades current capacity for enhanced voltage safety margin and reduced f_T, while the BC807-25,215 offers greater I_C headroom at the cost of larger junction capacitance and non-interchangeable packaging-requiring layout revision.

Availability

2SA1179N6-TB-E is available at Aetrix Electronics and suitable for power supply feedback control, low-voltage PNP switching, and audio signal inversion requiring stable component supply, RoHS-compliant packaging, and consistent Rank 6 h_FE performance.

Supply support for 2SA1179N6-TB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and IoT applications.

The 2SA1179N6-TB-E belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable, low-cost PNP switching and amplification in space-constrained consumer and industrial power management systems.

FAQ

What is the maximum operating temperature for the 2SA1179N6-TB-E?

The 2SA1179N6-TB-E has a maximum junction temperature (T_j) of 150°C and a storage temperature range of −55°C to +150°C. Its thermal performance is characterized on a glass-epoxy board (20 × 30 × 1.6 mm); derating is required above 25°C ambient to maintain 200 mW collector dissipation. Always verify thermal design with actual board layout and airflow for the 2SA1179N6-TB-E.

Is the 2SA1179N6-TB-E RoHS compliant and halogen-free?

Yes, the 2SA1179N6-TB-E is marked "Pb Free" in the ordering information and complies with RoHS Directive 2011/65/EU. The device uses lead-free terminations and meets JEDEC JS709B halogen-free requirements, with chlorine and bromine content below 900 ppm each. This applies specifically to the 2SA1179N6-TB-E variant shipped in embossed tape-and-reel packaging.

What does the "6" in 2SA1179N6-TB-E signify?

The "6" in 2SA1179N6-TB-E denotes the h_FE gain rank, specifying a guaranteed DC current gain range of 200–400 at −6 V V_CE and −10 mA I_C. This binning ensures consistent base drive requirements across production lots and eliminates guesswork in bias network design for the 2SA1179N6-TB-E.

Can the 2SA1179N6-TB-E replace the 2SA1179N6-CPA-TB-E?

Yes-the 2SA1179N6-TB-E and 2SA1179N6-CPA-TB-E are identical in electrical specifications, package (CPA), marking, and performance. The "CPA" in the latter part number is redundant, as "TB-E" already implies CPA packaging per onsemi's ordering convention. Both variants share the same die, test flow, and qualification data for the 2SA1179N6-TB-E.

What is the typical Cob value for the 2SA1179N6-TB-E and why does it matter?

The 2SA1179N6-TB-E has a typical output capacitance (C_ob) of 3.0 pF at −6 V V_CB and 1 MHz. This low value minimizes Miller multiplication in high-speed switching, preserves bandwidth in RF amplifier stages, and reduces propagation delay in digital logic interfaces-making it valuable where signal integrity or transition speed is critical for the 2SA1179N6-TB-E.

2SA1179N6-TB-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 150 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 135 @ 1mA, 6V

Power - Max:: 200 mW

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-CP

2SA1179N6-TB-E FAQ

1.How can I place an order for 2SA1179N6-TB-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1179N6-TB-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1179N6-TB-E reliable?

The price and inventory of 2SA1179N6-TB-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1179N6-TB-E is usually 5 days.

3.What payment methods are accepted for 2SA1179N6-TB-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1179N6-TB-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1179N6-TB-E?

2SA1179N6-TB-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1179N6-TB-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1179N6-TB-E?

For technical support, including 2SA1179N6-TB-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1179N6-TB-E requirements.

6.How does Aetrix verify that 2SA1179N6-TB-E is sourced from the original manufacturer or authorized distributors?

All 2SA1179N6-TB-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1179N6-TB-E meets industry standards.

7.What is the process for return or replacement of 2SA1179N6-TB-E?

All 2SA1179N6-TB-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1179N6-TB-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1179N6-TB-E part is unused and in its original packaging.

Return procedure for 2SA1179N6-TB-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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