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Toshiba Semiconductor and Storage 2SA1201-Y(TE12L,ZC
- Part No.:
- 2SA1201-Y(TE12L,ZC
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
2SA1201-Y(TE12L,ZC.pdf
- Description:
- TRANS PNP 120V 0.8A PW-MINI
- Quantity:
- Payment:
- Shipping:
Inventory:1,086
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Product details
Overview
2SA1201-Y(TE12L,Z) from Toshiba is a silicon PNP epitaxial transistor designed for high-voltage voltage and power amplifier stages, featuring VCEO = −120 V, fT = 120 MHz (typ.), hFE = 120–240 (Y-class), Cob = 30 pF, and PC = 1000 mW on ceramic substrate. It serves as a complementary pair to 2SC2881 in push-pull audio and RF output stages.
For engineers reviewing the 2SA1201-Y(TE12L,Z) datasheet, 2SA1201-Y(TE12L,Z) pinout, 2SA1201-Y(TE12L,Z) application, or 2SA1201-Y(TE12L,Z) equivalent, key selection criteria include guaranteed high-voltage blocking (−120 V VCEO), high-frequency gain stability (120 MHz fT at IC = −100 mA), Y-class hFE binning (120–240), low VCE(sat) (≤ −1.0 V @ IC = −500 mA), and SC-62 package thermal performance on ceramic substrates.
Technical Context
This PNP bipolar junction transistor uses Toshiba's PCT (Planar Collector Technology) process to achieve stable high-voltage operation and high-speed switching capability. Its epitaxial base structure supports high fT while maintaining robust secondary breakdown immunity, validated by SOA curves up to 1000 mW at Ta = 25°C with linear derating.
The device operates in common-emitter configuration with fixed DC biasing requirements: VCE = −5 V for hFE and fT testing, IC/IB = 10 for saturation characterization, and VCB = −10 V for Cob measurement. Its −5 V VEBO rating limits base drive swing in Class AB amplifier designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −120 V: Enables use in ≥100 V rail amplifier stages without breakdown risk |
| fT | 120 MHz (typ.): Supports HF audio and low-VHF RF amplification up to ~50 MHz usable bandwidth |
| hFE (Y-class) | 120–240 @ VCE = −5 V, IC = −100 mA: Tight DC gain bin ensures predictable bias point in discrete gain blocks |
| VCE(sat) | ≤ −1.0 V @ IC = −500 mA, IB = −50 mA: Limits conduction loss in medium-power switching or saturated driver applications |
| Cob | 30 pF @ VCB = −10 V: Defines Miller capacitance impact on high-frequency stability in CE configurations |
| PC (ceramic) | 1000 mW: Achievable only with 250 mm² × 0.8 mm ceramic substrate; not rated for PCB pad-only mounting |
| VEBO | −5 V: Constrains maximum reverse base-emitter voltage during turn-off transients or crossover distortion |
Pinout & Package
Package: SC-62 (JEITA), also known as PW-MINI or Toshiba 2-5K1A - a 3-pin small flat plastic package with gull-wing leads, 0.05 g typical weight, optimized for surface-mount on thermally conductive substrates.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Current sink terminal | Connected to most positive supply rail in PNP amplifier topologies; requires low-impedance return path for stability |
| Base (B) | Control input | Receives negative-going drive signal; limited to −5 V reverse bias; requires current-limited sourcing |
| Collector (C) | Output/output current source | Connected to load and negative supply; carries full output current; primary heat-generating node |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage PNP architecture | Supports symmetric ±100 V amplifier rails when paired with 2SC2881, enabling Class AB audio output without transformer coupling |
| Y-class hFE binning | Guarantees minimum hFE = 120, reducing unit-to-unit variation in bias-critical discrete amplifier designs |
| 120 MHz transition frequency | Enables stable gain in HF audio (up to 20 kHz) and narrowband RF driver stages (e.g., 27 MHz CB radio PA) |
| SC-62 thermal footprint | Enables direct mounting on ceramic substrates for reliable 1 W continuous dissipation without heatsink |
| Complementary pairing | Matched electrical specs with 2SC2881 allow balanced push-pull operation with minimized even-order harmonic distortion |
Applications
| Audio Power Amplifier | RF Driver Stage |
|---|---|
Use Scenario: Discrete Class AB push-pull output stage in hi-fi preamplifiers and active speaker crossovers. IC Role / Device Role / Timing Role: PNP output transistor conducting during positive half-cycle of input signal; complements NPN 2SC2881. Use Value: −120 V VCEO enables ±80 V rail operation; Y-class hFE ensures consistent quiescent current setting across production units. | Use Scenario: Final driver for 27 MHz AM/CB radio transmitters requiring 0.5–1 W RF output. IC Role / Device Role / Timing Role: Common-emitter RF amplifier biased in linear region; driven by preceding buffer stage. Use Value: 120 MHz fT provides sufficient gain margin at 27 MHz; 30 pF Cob allows stable neutralization with minimal external components. |
| Voltage Amplifier | High-Voltage Switching |
Use Scenario: First-stage voltage gain block in oscilloscope vertical deflection amplifiers operating from ±100 V supplies. IC Role / Device Role / Timing Role: Common-emitter DC-coupled amplifier with emitter degeneration resistor for linearity. Use Value: −120 V VCBO prevents breakdown under transient overvoltage; tight hFE binning reduces gain drift across temperature. | Use Scenario: High-side switch in industrial control logic interfacing −100 V analog sensor buses. IC Role / Device Role / Timing Role: Saturated PNP switch controlling current flow to grounded load. Use Value: ≤ −1.0 V VCE(sat) minimizes power loss at −500 mA load; SC-62 package allows compact layout near HV traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-voltage amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SA1306 | VCEO = −160 V, fT = 100 MHz, hFE = 100–320, same SC-62 package | Higher voltage rating but lower fT; suitable where >120 V blocking is required but HF response is secondary | Select 2SA1306 when system-level overvoltage margin exceeds 120 V and gain-bandwidth trade-off favors voltage headroom |
| MPSA92 | VCEO = −300 V, fT = 50 MHz, hFE = 40–250, TO-92 package, PC = 625 mW | Higher voltage, lower speed, lower power, through-hole; lacks Y-class binning and ceramic-substrate thermal rating | Choose MPSA92 for prototyping or low-volume designs needing ultra-high VCEO but accepting reduced HF performance and thermal capability |
Compared with 2SA1201-Y(TE12L,Z), 2SA1306 offers greater voltage safety margin at the cost of 17% lower fT, while MPSA92 trades package compatibility, thermal performance, and gain consistency for extreme voltage tolerance and through-hole assembly-neither is pin-compatible, and both require layout and thermal redesign.
Availability
2SA1201-Y(TE12L,Z) is available at Aetrix Electronics and suitable for audio power amplifiers, RF driver stages, high-voltage voltage amplifiers, and industrial switching circuits requiring stable component supply and long-term obsolescence management.
Supply support for 2SA1201-Y(TE12L,Z) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete devices, power electronics, and analog ICs, with decades of leadership in bipolar transistor technology.
The 2SA1201 belongs to Toshiba's legacy high-voltage PNP transistor family developed for professional audio and industrial analog systems, emphasizing ruggedness, gain consistency, and thermal reliability on ceramic substrates.
FAQ
What does the 'Y' suffix indicate in 2SA1201-Y(TE12L,Z)?
The 'Y' suffix in 2SA1201-Y(TE12L,Z) denotes the hFE bin classification: guaranteed DC current gain of 120–240 at VCE = −5 V and IC = −100 mA. This tighter bin improves predictability in bias-sensitive amplifier designs compared to the broader 'O' bin (80–160). The full marking includes RoHS-compliant packaging per Toshiba's environmental labeling standard.
Can 2SA1201-Y(TE12L,Z) be used without a ceramic substrate?
No-2SA1201-Y(TE12L,Z) is rated for 1000 mW collector power dissipation only when mounted on a 250 mm² × 0.8 mm ceramic substrate, as specified in Note 1 of the datasheet. On standard FR-4 PCBs without thermal vias or heatsinking, its safe continuous power drops significantly, typically below 300 mW. Derating curves must be applied strictly per the SOA graph in the official Toshiba datasheet.
Is 2SA1201-Y(TE12L,Z) pin-compatible with 2SC2881?
Yes-2SA1201-Y(TE12L,Z) and 2SC2881 share identical SC-62 (PW-MINI) package dimensions and pinout (E-B-C), enabling direct complementary placement in push-pull amplifier layouts. Both are characterized for matched VCEO, fT, and SOA, making them a purpose-designed pair for symmetrical high-voltage analog circuits.
What is the maximum safe operating frequency for 2SA1201-Y(TE12L,Z) in amplifier applications?
The 2SA1201-Y(TE12L,Z) has a typical transition frequency fT of 120 MHz, but usable small-signal bandwidth in common-emitter amplifiers is limited by gain-bandwidth trade-offs and parasitic capacitances. For stable voltage gain ≥10, practical operation remains below 20 MHz; for RF driver use at 27 MHz, neutralization or careful layout is required to suppress oscillation due to Cob feedback.
Does 2SA1201-Y(TE12L,Z) meet RoHS requirements?
Yes-2SA1201-Y(TE12L,Z) is RoHS compliant, as indicated by the '[[G]]/RoHS COMPATIBLE' marking per Toshiba's labeling note. The device contains no lead above threshold levels and conforms to Directive 2011/65/EU. Full compliance documentation, including material declarations, is available through Toshiba's official product support portal.
2SA1201-Y(TE12L,ZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 800 mA
- Voltage - Collector Emitter Breakdown (Max):
- 120 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 100mA, 5V
- Power - Max:
- 500 mW
- Frequency - Transition:
- 120MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PW-MINI
2SA1201-Y(TE12L,ZC FAQ
1.How can I place an order for 2SA1201-Y(TE12L,ZC through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SA1201-Y(TE12L,ZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SA1201-Y(TE12L,ZC reliable?
The price and inventory of 2SA1201-Y(TE12L,ZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1201-Y(TE12L,ZC is usually 5 days.
3.What payment methods are accepted for 2SA1201-Y(TE12L,ZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1201-Y(TE12L,ZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SA1201-Y(TE12L,ZC?
2SA1201-Y(TE12L,ZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SA1201-Y(TE12L,ZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SA1201-Y(TE12L,ZC?
For technical support, including 2SA1201-Y(TE12L,ZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1201-Y(TE12L,ZC requirements.
6.How does Aetrix verify that 2SA1201-Y(TE12L,ZC is sourced from the original manufacturer or authorized distributors?
All 2SA1201-Y(TE12L,ZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1201-Y(TE12L,ZC meets industry standards.
7.What is the process for return or replacement of 2SA1201-Y(TE12L,ZC?
All 2SA1201-Y(TE12L,ZC units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1201-Y(TE12L,ZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SA1201-Y(TE12L,ZC part is unused and in its original packaging.
Return procedure for 2SA1201-Y(TE12L,ZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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