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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA1208S-AE

Name: 2SA1208S-AE
Brand: onsemi
SKU: 2SA1208S-AE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA1208S-AE

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: 2SA1208S-AE.pdf

Description:: TRANS PNP 160V 0.07A 3-MP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SA1208S-AE from SANYO is a PNP epitaxial planar silicon transistor designed for high-voltage switching and audio 80W output predriver applications. It features V_CEO = −160 V, I_C = −700 mA, P_C = 900 mW, f_T = 150 MHz, and h_FE = 100–400 at I_C = −10 mA, operating in Class AB audio stages of high-fidelity amplifiers.

For engineers reviewing the 2SA1208S-AE datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed high breakdown voltage, low output capacitance (C_ob = 2.5 pF @ V_CB = −10 V), fast switching (t_on = 1.0 µs, t_fall = 2.0 µs), and linearity-critical h_FE stability across temperature (−25°C to +75°C).

Technical Context

The 2SA1208S-AE employs SANYO's FBET (Flat Base Epitaxial Transistor) process to achieve high V_CEO (−160 V) and low C_ob (2.5 pF), enabling stable operation in high-swing audio predriver stages. Its h_FE range (100–400) is binned at I_C = −10 mA, ensuring predictable biasing in complementary pair configurations with 2SC2910.

Designed for linear amplification, it delivers excellent h_FE linearity versus I_C and minimal V_CE(sat) drift (−0.8 V max @ I_C = −700 mA, I_B = −70 mA). Switching performance is validated under standardized test conditions (V_CC = −20 V, R_L = 5 kΩ, I_B1/I_B2 = ±10 mA).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−160 V - Enables safe operation in high-voltage audio rails up to ±80 V without breakdown.
I_C (max)	−700 mA - Supports 80W class-AB amplifier predriver stage current demands with thermal margin.
P_C	900 mW - Specifies maximum continuous power dissipation at T_a = 25°C; derates linearly above 25°C.
f_T	150 MHz - Ensures wide bandwidth for full-audio-frequency response and low distortion in predriver gain blocks.
C_ob	2.5 pF @ V_CB = −10 V - Minimizes Miller effect, preserving high-frequency gain stability in common-emitter configurations.
h_FE	100–400 @ I_C = −10 mA - Binned gain range enables matched-pair selection with 2SC2910 for push-pull symmetry.
t_on/t_fall	1.0 µs / 2.0 µs - Confirmed switching speed supports clean transient response in high-slew-rate audio circuits.

Pinout & Package

2SA1208S-AE uses the MP (Metal Can) package - a hermetically sealed TO-3P variant with 3-terminal axial leads, optimized for high-voltage isolation and thermal dissipation in power audio modules.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal for PNP operation	Connected to most positive rail in common-emitter predriver; polarity reversal required vs NPN counterparts.
2 (Collector)	High-voltage output node	Drives base of output transistors; rated for −160 V reverse bias and −700 mA DC current.
3 (Base)	Control input for current amplification	Accepts low-current drive (e.g., −70 mA for full I_C) with V_BE(sat) ≤ −1.2 V at I_C = −700 mA.

Key Features

Feature	Design Value
FBET process technology	Enables simultaneous high V_CEO (−160 V) and low C_ob (2.5 pF), critical for high-fidelity RF/audio linearity.
h_FE linearity	Minimal h_FE variation across I_C range ensures consistent gain and low harmonic distortion in analog amplification.
Fast switching capability	t_on = 1.0 µs and t_fall = 2.0 µs support clean signal transitions in high-slew-rate audio driver stages.
Thermal stability	h_FE and V_CE(sat) characterized from −25°C to +75°C, enabling reliable operation in enclosed amplifier chassis.
Matched complementary pairing	Specified alongside 2SC2910 (NPN) with aligned h_FE bins and symmetrical f_T, simplifying push-pull design.

Applications

Hi-Fi Audio Power Amplifier Pre-Driver	Industrial Linear Power Supply Pass Transistor
Use Scenario: Driving the bases of output MOSFETs or bipolar transistors in discrete Class AB power amplifiers delivering 50–100 W into 4–8 Ω loads. IC Role / Device Role / Timing Role: PNP predriver transistor providing high-current, low-distortion voltage gain before final output stage. Use Value: High V_CEO (−160 V) and low C_ob (2.5 pF) maintain open-loop bandwidth and reduce intermodulation distortion in feedback loops.	Use Scenario: Regulating high-voltage rails (±60 V to ±80 V) in lab-grade linear power supplies requiring low-noise, high-stability output. IC Role / Device Role / Timing Role: Series pass element in discrete three-terminal regulator topology, controlled by error amplifier feedback. Use Value: Guaranteed h_FE range (100–400) and low V_CE(sat) (≤ −0.8 V) enable precise current mirroring and thermal compensation in reference designs.
Test Equipment Signal Generator Output Stage	Professional Audio Mixer Channel Driver
Use Scenario: Final gain stage in programmable waveform generators producing sine/square/triangle outputs up to 20 V_PP at 1 MHz. IC Role / Device Role / Timing Role: High-slew-rate buffer amplifier isolating DAC output from reactive loads while maintaining fidelity. Use Value: f_T = 150 MHz and fast switching (t_on/t_fall ≤ 2 µs) preserve edge integrity and minimize overshoot in pulse generation.	Use Scenario: Discrete summing amplifier driver in analog channel strips handling mic/line inputs before ADC conversion in digital consoles. IC Role / Device Role / Timing Role: Low-noise, high-linearity predriver feeding transformer-coupled or active-balanced output circuitry. Use Value: Excellent h_FE linearity and low C_ob ensure flat frequency response (20 Hz–20 kHz ±0.1 dB) and <−100 dB THD+N at full scale.

Hi-Fi Audio Power Amplifier Pre-Driver

Industrial Linear Power Supply Pass Transistor

Use Scenario: Driving the bases of output MOSFETs or bipolar transistors in discrete Class AB power amplifiers delivering 50–100 W into 4–8 Ω loads.

IC Role / Device Role / Timing Role: PNP predriver transistor providing high-current, low-distortion voltage gain before final output stage.

Use Value: High V_CEO (−160 V) and low C_ob (2.5 pF) maintain open-loop bandwidth and reduce intermodulation distortion in feedback loops.

Use Scenario: Regulating high-voltage rails (±60 V to ±80 V) in lab-grade linear power supplies requiring low-noise, high-stability output.

IC Role / Device Role / Timing Role: Series pass element in discrete three-terminal regulator topology, controlled by error amplifier feedback.

Use Value: Guaranteed h_FE range (100–400) and low V_CE(sat) (≤ −0.8 V) enable precise current mirroring and thermal compensation in reference designs.

Test Equipment Signal Generator Output Stage

Professional Audio Mixer Channel Driver

Use Scenario: Final gain stage in programmable waveform generators producing sine/square/triangle outputs up to 20 V_PP at 1 MHz.

IC Role / Device Role / Timing Role: High-slew-rate buffer amplifier isolating DAC output from reactive loads while maintaining fidelity.

Use Value: f_T = 150 MHz and fast switching (t_on/t_fall ≤ 2 µs) preserve edge integrity and minimize overshoot in pulse generation.

Use Scenario: Discrete summing amplifier driver in analog channel strips handling mic/line inputs before ADC conversion in digital consoles.

IC Role / Device Role / Timing Role: Low-noise, high-linearity predriver feeding transformer-coupled or active-balanced output circuitry.

Use Value: Excellent h_FE linearity and low C_ob ensure flat frequency response (20 Hz–20 kHz ±0.1 dB) and <−100 dB THD+N at full scale.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching and audio predriver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1302	V_CEO = −200 V, I_C = −1 A, f_T = 30 MHz - higher voltage/current but lower bandwidth.	Better suited for ultra-high-voltage supply regulation; less optimal for wideband audio due to reduced f_T.	Select when V_CEO margin >40 V is required and audio bandwidth <5 MHz suffices.
MJE15034	V_CEO = −250 V, I_C = −8 A, h_FE = 40–250 - higher power but wider h_FE tolerance and no factory binning.	Targeted at output stage use; lacks the tight h_FE matching and low-C_ob needed for precision predrivers.	Prefer for final output devices; avoid where h_FE symmetry with NPN complement (e.g., 2SC2910) is mandatory.

Compared with 2SA1208S-AE, 2SA1302 trades bandwidth for higher breakdown and current capacity, while MJE15034 prioritizes ruggedness over linearity and matching-making 2SA1208S-AE uniquely balanced for high-fidelity predriver roles demanding both voltage headroom and wideband fidelity.

Availability

2SA1208S-AE is available at Aetrix Electronics and suitable for hi-fi audio amplifier design, industrial linear power supply development, and professional audio equipment manufacturing requiring stable component supply and long-term obsolescence management.

Supply support for 2SA1208S-AE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer known for high-reliability discrete power transistors and analog ICs before its acquisition by Panasonic in 2011.

The 2SA1208S-AE belongs to SANYO's high-voltage audio transistor family, engineered specifically for linear amplification stages where breakdown voltage, gain linearity, and thermal stability are critical.

FAQ

What is the absolute maximum collector-emitter voltage rating for the 2SA1208S-AE?

The 2SA1208S-AE has an absolute maximum V_CEO rating of −160 V at T_a = 25°C. This rating defines the highest reverse-biased voltage the transistor can withstand between collector and emitter with the base open. Exceeding this value-even momentarily-may cause irreversible breakdown. Derating is required at elevated ambient temperatures per the datasheet's thermal curves.

Is the 2SA1208S-AE pin-compatible with the 2SC2910 NPN transistor?

No, the 2SA1208S-AE and 2SC2910 are complementary transistors-not pin-compatible. Both use the MP metal-can package with identical pinout (Emitter=1, Collector=2, Base=3), but their polarities differ: 2SA1208S-AE is PNP (Emitter positive relative to Collector), while 2SC2910 is NPN. They are intended for matched-pair use in push-pull stages, not direct substitution.

What is the typical output capacitance (C_ob) of the 2SA1208S-AE and why does it matter?

The 2SA1208S-AE exhibits C_ob = 2.5 pF at V_CB = −10 V. This low output capacitance minimizes Miller multiplication in common-emitter amplifiers, preserving high-frequency gain and phase margin-especially critical in wideband audio predrivers and feedback-stabilized power stages where instability must be avoided.

How is h_FE binned for the 2SA1208S-AE, and what does the "S-AE" suffix indicate?

The "S-AE" suffix denotes a specific h_FE bin: 100–400 measured at I_C = −10 mA and V_CE = −5 V. This binning enables precise matching with complementary 2SC2910 units (also binned) for push-pull symmetry in high-end audio designs. The datasheet confirms this classification applies directly to the 2SA1208S-AE ordering variant.

Can the 2SA1208S-AE be used in switching power supplies?

The 2SA1208S-AE is optimized for linear operation-not hard-switching SMPS topologies. While its t_on/t_fall values (1.0 µs / 2.0 µs) support moderate-speed switching, its SOA and thermal characteristics are specified for linear duty cycles. For switch-mode applications, dedicated high-speed switching transistors with optimized SOA and lower storage time are recommended instead of the 2SA1208S-AE.

2SA1208S-AE Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 70 mA

Voltage - Collector Emitter Breakdown (Max):: 160 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 3mA, 30mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 10mA, 5V

Power - Max:: 900 mW

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-MP

2SA1208S-AE FAQ

1.How can I place an order for 2SA1208S-AE through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1208S-AE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1208S-AE reliable?

The price and inventory of 2SA1208S-AE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1208S-AE is usually 5 days.

3.What payment methods are accepted for 2SA1208S-AE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1208S-AE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1208S-AE?

2SA1208S-AE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1208S-AE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1208S-AE?

For technical support, including 2SA1208S-AE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1208S-AE requirements.

6.How does Aetrix verify that 2SA1208S-AE is sourced from the original manufacturer or authorized distributors?

All 2SA1208S-AE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1208S-AE meets industry standards.

7.What is the process for return or replacement of 2SA1208S-AE?

All 2SA1208S-AE units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1208S-AE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1208S-AE part is unused and in its original packaging.

Return procedure for 2SA1208S-AE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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