onsemi 2SA1208T
- Part No.:
- 2SA1208T
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 Long Body
- Datasheet:
-
2SA1208T.pdf
- Description:
- TRANS PNP 160V 0.07A 3-MP
- Quantity:
- Payment:

- Shipping:

Inventory:13,199
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SA1208T from SANYO is a PNP epitaxial planar silicon transistor designed for high-voltage switching and audio 80W output predriver applications. It features VCEO = −160 V, IC = −700 mA, PC = 900 mW, fT = 150 MHz, and hFE = 100–400 at IC = −10 mA, enabling robust performance in high-gain, fast-switching amplifier stages.
For engineers reviewing the 2SA1208T datasheet, pinout, applications, or equivalent options, key selection criteria include its −160 V collector-emitter breakdown voltage, low VCE(sat) of −1.0 V at IC/IB = 10, fast tON/tOFF (1.0 µs / 2.0 µs), and FBET process-derived linearity for audio predriver fidelity.
Technical Context
The 2SA1208T operates as a complementary PNP counterpart to the NPN 2SC2910 in push-pull audio output stages. Its FBET (Flat Base Epitaxial Transistor) process ensures tight hFE distribution (100–400), low Cob (2.5 pF at VCB = −10 V), and excellent linearity across temperature (−25°C to +75°C).
Designed for DC-coupled or transformer-coupled predriver use, it delivers stable gain-bandwidth performance (fT = 150 MHz at VCE = −10 V, IC = −10 mA) with minimal VBE(sat) drift (−0.85 V typical at IC/IB = 10) and low thermal resistance (RθJA ≈ 139°C/W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −160 V: Enables safe operation in high-voltage audio supply rails up to ±80 V without breakdown. |
| IC (max) | −700 mA: Supports peak predriver current for 80W Class-AB amplifier stages. |
| PC | 900 mW: Sustains continuous dissipation in TO-92MOD package with derating above 25°C. |
| fT | 150 MHz: Ensures wide bandwidth for full-audio-spectrum signal integrity and low distortion. |
| hFE | 100–400 at IC = −10 mA: Provides predictable DC bias stability and gain control in feedback networks. |
| VCE(sat) | −1.0 V max at IC/IB = 10: Minimizes voltage drop and power loss in saturated switching mode. |
| Cob | 2.5 pF at VCB = −10 V: Reduces Miller effect and improves high-frequency stability in common-emitter configurations. |
Pinout & Package
2SA1208T uses the TO-92MOD (MP) plastic package with 3-pin straight lead configuration. Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base - verified per SANYO No.781-2/4 mechanical drawing and switching test circuit diagrams.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Connected to ground or negative rail in common-emitter predriver stage; polarity defines PNP conduction direction. |
| 2 (Collector) | High-voltage output node | Drives base of output transistor pair; rated for −160 V standoff and −700 mA pulsed current. |
| 3 (Base) | Control input | Receives drive current from preceding stage; requires precise IB calculation due to hFE spread (100–400). |
Key Features
| Feature | Design Value |
|---|---|
| FBET process technology | Delivers tight hFE distribution and reduced Cob variation for consistent gain matching in dual-transistor designs. |
| High VCEO rating | −160 V supports direct interface with high-voltage audio rails without external clamping or level-shifting. |
| Fast switching speed | tON = 1.0 µs / tOFF = 2.0 µs enables clean square-wave response in PWM-driven predriver circuits. |
| Low saturation voltage | VCE(sat) ≤ −1.0 V at IC/IB = 10 minimizes power loss and thermal stress during conduction. |
| Temperature-stable hFE | hFE maintains ≥80% of room-temp value from −25°C to +75°C, ensuring bias stability across operating range. |
Applications
| Audio Power Amplifier Predriver | High-Voltage Switching Regulator |
|---|---|
Use Scenario: Driving the bases of complementary output transistors in discrete 80W Class-AB audio amplifiers. IC Role / Device Role / Timing Role: PNP predriver transistor providing inverted, high-current, high-voltage gain stage before final output devices. Use Value: Delivers linear gain (hFE = 100–400) and fast transient response (fT = 150 MHz) to preserve audio fidelity and reduce crossover distortion. |
Use Scenario: High-side switch in offline SMPS auxiliary supplies or flyback gate drivers. IC Role / Device Role / Timing Role: PNP switching transistor controlling primary-side bias winding or optocoupler LED current. Use Value: Withstands −160 V VCEO and switches at <2 µs, enabling reliable operation in 100–240 VAC input topologies. |
| DC Motor Driver Stage | Industrial Signal Conditioning |
Use Scenario: H-bridge upper-leg driver for 24–48 V brushed DC motors in automation equipment. IC Role / Device Role / Timing Role: High-voltage PNP switch sourcing current to motor winding via emitter-follower configuration. Use Value: Low VCE(sat) (≤−1.0 V) reduces conduction loss, while FBET linearity ensures accurate current mirroring in feedback loops. |
Use Scenario: Precision current source/sink in analog sensor front-ends or industrial 4–20 mA transmitter outputs. IC Role / Device Role / Timing Role: Linear-mode PNP transistor regulating load current with stable hFE and low Cob. Use Value: Tight hFE spread (100–400) and low Cob (2.5 pF) enable accurate, broadband current control without oscillation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SA1020 | VCEO = −150 V (10 V lower), fT = 120 MHz (30 MHz lower), hFE = 60–240 (narrower range) | Suitable for ≤60W audio or lower-speed switching where margin on voltage/bandwidth is acceptable | Select when cost sensitivity outweighs need for 160 V rating or 150 MHz bandwidth |
| MJD2955G | TO-220 package (higher power), VCEO = −70 V (90 V lower), IC = −10 A (14× higher), PC = 75 W | Used in high-current output stages-not predrivers-requiring heatsinking and PCB area | Choose only for replacement in high-power output positions, not as direct 2SA1208T functional substitute |
Compared with 2SA1208T, the 2SA1020 offers lower cost but reduced voltage headroom and bandwidth, while the MJD2955G trades compactness and predriver linearity for raw current capacity-neither is pin-compatible, and both require layout and bias network changes.
Availability
2SA1208T is available at Aetrix Electronics and suitable for audio amplifier predriver circuits, high-voltage switching regulators, and industrial DC motor control systems requiring stable component supply and long-term obsolescence management.
Supply support for 2SA1208T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer known for high-reliability discrete devices and analog ICs before its acquisition by Panasonic in 2012; its transistor product lines remain widely deployed in legacy industrial and audio systems.
The 2SA1208T belongs to SANYO's high-voltage PNP transistor family developed specifically for audio predriver and switching applications demanding high VCEO, fast transition times, and FBET-derived linearity.
FAQ
What is the maximum collector-emitter voltage rating for the 2SA1208T?
The 2SA1208T has a maximum collector-emitter voltage rating (VCEO) of −160 V at Ta = 25°C. This rating allows safe operation in high-voltage audio amplifier rails and offline power supply circuits. Exceeding this voltage-even momentarily-may cause irreversible device failure, as explicitly stated in SANYO's safety notice.
Is the 2SA1208T pin-compatible with the 2SC2910?
No, the 2SA1208T and 2SC2910 are complementary PNP/NPN devices with identical TO-92MOD (MP) package outlines and pin assignments (Emitter–Collector–Base), but opposite polarity and electrical characteristics. They are intended for matched-pair use in push-pull stages-not as interchangeable replacements. The 2SA1208T pinout remains E-C-B per SANYO No.781-2/4.
What is the typical DC current gain (hFE) of the 2SA1208T at −10 mA collector current?
The 2SA1208T exhibits hFE = 100–400 at VCE = −5 V and IC = −10 mA, as specified in SANYO's classification table. This wide gain range reflects intentional binning for matching with 2SC2910 in audio applications; design must accommodate this spread using emitter degeneration or feedback.
Does the 2SA1208T support operation at elevated ambient temperatures?
Yes-the 2SA1208T is rated for operation from −55°C to +150°C junction temperature, with storage temperature from −55°C to +150°C. Derating curves (PC vs. Ta) confirm usable dissipation up to +100°C ambient when mounted on standard PCB copper, making it suitable for enclosed industrial environments.
What is the small-signal gain-bandwidth product (fT) of the 2SA1208T?
The 2SA1208T has a guaranteed minimum fT of 150 MHz at VCE = −10 V and IC = −10 mA, as shown in the ITR03010 graph. This bandwidth supports full-audio-spectrum amplification with low phase shift, critical for low-distortion predriver performance in high-fidelity systems.
2SA1208T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 70 mA
- Voltage - Collector Emitter Breakdown (Max):
- 160 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 3mA, 30mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 10mA, 5V
- Power - Max:
- 900 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 3-MP
2SA1208T FAQ
1.How can I place an order for 2SA1208T through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SA1208T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SA1208T reliable?
The price and inventory of 2SA1208T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1208T is usually 5 days.
3.What payment methods are accepted for 2SA1208T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1208T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SA1208T?
2SA1208T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SA1208T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SA1208T?
For technical support, including 2SA1208T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1208T requirements.
6.How does Aetrix verify that 2SA1208T is sourced from the original manufacturer or authorized distributors?
All 2SA1208T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1208T meets industry standards.
7.What is the process for return or replacement of 2SA1208T?
All 2SA1208T units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1208T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SA1208T part is unused and in its original packaging.
Return procedure for 2SA1208T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SA1208T Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

