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Toshiba Semiconductor and Storage 2SA1312GRTE85LF
- Part No.:
- 2SA1312GRTE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
2SA1312GRTE85LF.pdf
- Description:
- TRANS PNP 120V 0.1A S-MINI
- Quantity:
- Payment:
- Shipping:
Inventory:7,435
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Product details
Overview
2SA1312GRTE85LF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial transistor designed for audio frequency low-noise amplifier stages, featuring VCEO = −120 V, hFE = 200–700, NF(2) = 0.2 dB (typ.) at 1 kHz, fT = 100 MHz, and Cob = 4 pF. It operates in linear analog signal paths where high-voltage swing and low-noise gain are critical, such as preamplifier input stages in professional audio equipment.
For engineers reviewing the 2SA1312GRTE85LF datasheet, 2SA1312GRTE85LF pinout, 2SA1312GRTE85LF application, or 2SA1312GRTE85LF equivalent, key selection criteria include guaranteed hFE linearity (hFE@−0.1 mA / hFE@−2 mA = 0.95 typ.), complementary pairing with 2SC3324, JEITA SC-59 package compatibility, and −120 V breakdown ratings under continuous bias conditions.
Technical Context
This PNP bipolar junction transistor uses Toshiba's PCT (Planar Collector Technology) process to achieve stable hFE linearity across collector current-critical for minimizing harmonic distortion in Class-A audio amplifiers. Its −120 V VCEO and −120 V VCBO ratings support high-headroom operation in discrete gain blocks without cascading voltage dividers.
The device delivers low-noise performance (NF(2) = 0.2 dB typ. at 1 kHz, RG = 10 kΩ) due to optimized emitter-base junction geometry and epitaxial base layer control, enabling use in microphone preamps and phono-stage inputs where signal integrity at microvolt levels is essential.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −120 V: Enables direct coupling into high-impedance, high-swing audio nodes without level-shifting circuitry. |
| hFE range | 200–700: Supports precise DC biasing in fixed-emitter-resistor configurations with predictable quiescent current stability. |
| NF(2) | 0.2 dB (typ.) at 1 kHz: Ensures minimal added noise in line-level and instrument-input amplification stages. |
| fT | 100 MHz: Provides sufficient gain-bandwidth for wideband audio (20 Hz–20 kHz) with margin against phase shift-induced instability. |
| Cob | 4 pF: Limits Miller-effect capacitance in common-emitter configurations, preserving high-frequency open-loop gain. |
| PC (FR4) | 200 mW (Note 1): Allows thermal design on standard PCBs using 0.8 mm² copper pads without heatsinking in low-power analog modules. |
Pinout & Package
Package: JEITA SC-59 (Toshiba 2-3F1A), JEDEC TO-236MOD - surface-mount, 3-terminal plastic package with 0.012 g mass and 1.3 mm profile, suitable for automated placement and reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Current sink terminal for PNP operation | Connected to higher-potential rail (e.g., −12 V supply) in common-emitter amplifier topologies. |
| Base (B) | Control electrode for minority-carrier injection | Requires negative-biased drive relative to emitter; used for DC bias network or AC-coupled signal injection. |
| Collector (C) | Output current source terminal | Drives load impedance (e.g., transformer primary or next-stage base) with inverted, amplified signal polarity. |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage PNP structure | −120 V VCEO rating enables single-supply high-fidelity audio gain blocks without floating supplies or cascoding. |
| hFE linearity ratio | 0.95 (typ.) ensures consistent small-signal transconductance across operating current range, reducing intermodulation distortion. |
| Low-noise figure | NF(2) = 0.2 dB (typ.) at 1 kHz meets IEC 60268-3 requirements for professional microphone preamplifier front-ends. |
| Complementary pairing | Matched electrical characteristics with 2SC3324 allow balanced push-pull output stages or differential input pairs in discrete op-amp designs. |
Applications
| Microphone Preamp Input Stage | Phono Equalization Amplifier |
|---|---|
Use Scenario: Low-level condenser microphone signal amplification before ADC or analog processing. IC Role / Device Role / Timing Role: PNP transistor configured in common-emitter topology providing first-stage voltage gain with minimal added noise. Use Value: 0.2 dB NF(2) preserves dynamic range of sub-millivolt signals; −120 V rating accommodates phantom power headroom. | Use Scenario: RIAA equalization network implementation in turntable preamplifiers requiring precise gain shaping. IC Role / Device Role / Timing Role: Discrete gain element in active filter sections with tight hFE matching for channel balance. Use Value: hFE linearity ratio of 0.95 minimizes harmonic distortion across playback frequencies (20 Hz–20 kHz). |
| Instrument-Level Line Driver | Discrete Op-Amp Input Pair |
Use Scenario: High-impedance guitar/bass pickup buffering and level boosting prior to effects chain or mixer input. IC Role / Device Role / Timing Role: Emitter-follower buffer stage delivering low-output impedance while maintaining signal fidelity. Use Value: 100 MHz fT ensures flat frequency response up to 100 kHz, eliminating high-frequency roll-off in passive tone controls. | Use Scenario: Differential input pair in custom-designed operational amplifiers for test equipment or precision instrumentation. IC Role / Device Role / Timing Role: Matched PNP pair (with 2SC3324) forming the core of a discrete long-tailed pair input stage. Use Value: Complementary symmetry and hFE consistency enable CMRR > 80 dB in low-noise, high-slew-rate amplifier architectures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-noise amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SA1084(TE85LF) | VCEO = −160 V, hFE = 120–400, NF(2) = 0.5 dB (typ.), fT = 80 MHz | Higher breakdown but lower gain-bandwidth and higher noise; suited for ultra-high-voltage but less bandwidth-critical stages | Select when system requires >−120 V headroom and can tolerate 0.3 dB NF penalty and reduced slew capability. |
| MPSA92 | VCEO = −300 V, hFE = 25–200, NF(2) = 10 dB (typ.), fT = 50 MHz | Higher voltage rating but significantly lower hFE and much higher noise; intended for switching, not low-noise linear use | Use only in non-critical high-voltage switching roles-not recommended for audio preamp replacement without redesign. |
Compared with 2SA1312GRTE85LF, 2SA1084(TE85LF) trades bandwidth and noise performance for extended voltage tolerance, while MPSA92 sacrifices linearity, gain, and noise floor for extreme breakdown robustness-neither offers drop-in equivalence in low-noise analog gain applications.
Availability
2SA1312GRTE85LF is available at Aetrix Electronics and suitable for professional audio equipment, instrumentation signal conditioning, and discrete amplifier module production requiring stable component supply and traceable RoHS-compliant sourcing.
Supply support for 2SA1312GRTE85LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and discrete components with over 40 years of analog transistor development history.
The 2SA1312GRTE85LF belongs to Toshiba's legacy audio-grade PNP transistor product line, engineered specifically for high-fidelity linear amplification where voltage headroom, noise floor, and gain linearity are design-critical parameters.
FAQ
What is the maximum collector-emitter voltage rating for 2SA1312GRTE85LF?
The 2SA1312GRTE85LF has a guaranteed VCEO rating of −120 V at Ta = 25°C, verified per Toshiba's Absolute Maximum Ratings table. This rating applies to devices with ordering part number ending in LF(T), and must be derated linearly above 25°C ambient per the Pc–Ta curve. Exceeding this voltage risks irreversible avalanche breakdown in the collector-base junction.
Is 2SA1312GRTE85LF RoHS compliant?
Yes, the 2SA1312GRTE85LF is RoHS compliant. Toshiba confirms compliance with Directive 2011/65/EU (RoHS 2) for this part number, as indicated by the "LF" suffix in the ordering code and verified in Toshiba's official environmental documentation. Lead-free soldering profiles compatible with JEDEC J-STD-020 are supported.
What does the 'GR' suffix mean in 2SA1312GRTE85LF?
The 'GR' suffix in 2SA1312GRTE85LF denotes the hFE classification group: GR (G) specifies a DC current gain range of 200–400 at VCE = −6 V and IC = −2 mA. This binning ensures predictable bias point stability in production circuits and enables matched-pair selection when paired with complementary 2SC3324 variants.
Can 2SA1312GRTE85LF be used as a direct replacement for 2SA1312BLTE85LF?
No-2SA1312GRTE85LF and 2SA1312BLTE85LF are not interchangeable without circuit review. The 'BL' variant has hFE = 350–700, resulting in higher gain and different bias current requirements. Substituting GR for BL may cause thermal runaway or insufficient gain; verify operating point stability and adjust base bias resistors accordingly.
What is the typical noise figure of 2SA1312GRTE85LF at 100 Hz?
The typical noise figure of 2SA1312GRTE85LF at 100 Hz is 0.5 dB under test conditions of VCE = −6 V, IC = −0.1 mA, and RG = 10 kΩ (NF(1)). This value is specified in Toshiba's Electrical Characteristics table and reflects its suitability for very-low-frequency audio applications such as subsonic filtering or vibration sensor amplification.
2SA1312GRTE85LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 120 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 6V
- Power - Max:
- 150 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- S-Mini
2SA1312GRTE85LF FAQ
1.How can I place an order for 2SA1312GRTE85LF through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SA1312GRTE85LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SA1312GRTE85LF reliable?
The price and inventory of 2SA1312GRTE85LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1312GRTE85LF is usually 5 days.
3.What payment methods are accepted for 2SA1312GRTE85LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1312GRTE85LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SA1312GRTE85LF?
2SA1312GRTE85LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SA1312GRTE85LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SA1312GRTE85LF?
For technical support, including 2SA1312GRTE85LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1312GRTE85LF requirements.
6.How does Aetrix verify that 2SA1312GRTE85LF is sourced from the original manufacturer or authorized distributors?
All 2SA1312GRTE85LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1312GRTE85LF meets industry standards.
7.What is the process for return or replacement of 2SA1312GRTE85LF?
All 2SA1312GRTE85LF units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1312GRTE85LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SA1312GRTE85LF part is unused and in its original packaging.
Return procedure for 2SA1312GRTE85LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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