Toshiba Semiconductor and Storage 2SA1313-O(TE85L,F)

Overview

2SA1313-O(TE85L,F) from TOSHIBA is a silicon PNP epitaxial transistor using the PCT process, designed for audio frequency low-power amplification, driver-stage amplification, and switching applications. It delivers hFE ≥25 at V_CE = −6 V / I_C = −400 mA, V_CEO = −50 V (min), and f_T = 200 MHz (typ.), housed in a TO-236MOD (SC-59) package.

For engineers reviewing the 2SA1313-O(TE85L,F) datasheet, 2SA1313-O(TE85L,F) pinout, 2SA1313-O(TE85L,F) application, or 2SA1313-O(TE85L,F) equivalent, key selection factors include its PNP polarity, −50 V V_CEO, 200 mW power dissipation, hFE linearity across operating current, and complementary pairing with 2SC3325 in push-pull designs.

Technical Context

This PNP bipolar junction transistor operates in linear amplification and saturated switching modes. Its hFE is specified in two conditions-70–140 at V_CE = −1 V / I_C = −100 mA and ≥25 at V_CE = −6 V / I_C = −400 mA-enabling stable gain in both small-signal and medium-current driver stages.

The device features low V_CE(sat) (−0.1 V typ. at I_C = −100 mA / I_B = −10 mA) and moderate Cob (13 pF typ. at V_CB = −6 V), supporting high-frequency audio and switching performance within its 200 MHz f_T bandwidth limit.

Key Specifications

Pinout & Package

Package: TO-236MOD (JEDEC), SC-59 (JEITA), Toshiba 2-3F1A - surface-mount, 3-terminal plastic package with 0.012 g typical mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier and switching applications.

Compared with 2SA1313-O(TE85L,F), 2SA1015-Y offers lower cost and legacy compatibility but sacrifices current capability, while MMBT2907ALT1G provides enhanced voltage margin and current headroom at the expense of different thermal profile and footprint-both require layout and bias network review.

Availability

2SA1313-O(TE85L,F) is available at Aetrix Electronics and suitable for audio pre-amplifier stages, LED driver switches, and relay interface circuits requiring stable component supply and long-lifecycle support.

Supply support for 2SA1313-O(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete devices, power MOSFETs, and analog ICs for industrial, consumer, and automotive applications.

The 2SA1313 belongs to Toshiba's legacy general-purpose bipolar transistor family, engineered for cost-sensitive, high-volume audio, switching, and interface applications where reliability and parameter consistency across decades of production are critical.

FAQ

What is the pin configuration of the 2SA1313-O(TE85L,F)?

The 2SA1313-O(TE85L,F) uses a standard TO-236MOD (SC-59) package with three terminals: Emitter (E), Base (B), and Collector (C), arranged left-to-right as E-B-C when viewed from the top with marking side up and leads pointing downward. This pinout is confirmed in Toshiba's official package drawing 2-3F1A and aligns with JEDEC TO-236MOD conventions.

Is the 2SA1313-O(TE85L,F) RoHS compliant?

Yes, the 2SA1313-O(TE85L,F) meets RoHS Directive 2011/65/EU requirements. Toshiba confirms lead-free termination and halogen-free molding compound for this part, as documented in their environmental compliance reports dated 2014 onward. Full material declarations are available upon request for qualified customers.

What does the "O" suffix mean in 2SA1313-O(TE85L,F)?

The "O" suffix in 2SA1313-O(TE85L,F) denotes the hFE(1) classification bin: 70–140 at V_CE = −1 V / I_C = −100 mA, and hFE(2) ≥25 at V_CE = −6 V / I_C = −400 mA. It is not a revision code or packaging variant-it specifies guaranteed DC current gain performance per Toshiba's binning standard.

Can the 2SA1313-O(TE85L,F) replace the 2SA1015 in existing designs?

The 2SA1313-O(TE85L,F) can replace the 2SA1015 in many low-power PNP roles, but caution is required: it supports higher I_C (−500 mA vs. −150 mA) and same V_CEO, yet uses SC-59 instead of TO-92. Thermal and layout compatibility must be verified-especially PCB copper area and solder reflow profile-due to differing package thermal resistance and footprint.

What is the maximum safe operating temperature for the 2SA1313-O(TE85L,F)?

The 2SA1313-O(TE85L,F) has a maximum junction temperature (T_j) of 150°C and storage range of −55°C to +150°C. For reliable long-term operation, Toshiba recommends derating power dissipation above 25°C ambient per the thermal resistance R_θJA ≈ 625°C/W (SC-59, no heatsink), limiting continuous I_C at elevated temperatures to avoid exceeding T_j.