Toshiba Semiconductor and Storage 2SA1313-Y,LF

Overview

2SA1313-Y,LF from TOSHIBA is a silicon PNP epitaxial transistor (PCT process) designed for audio frequency low-power amplification, driver-stage amplification, and switching applications. It delivers hFE ≥25 at V_CE = −6 V / I_C = −400 mA, V_CEO = −50 V (min), f_T = 200 MHz (typ.), V_CE(sat) = −0.1 V (typ.) at I_C = −100 mA / I_B = −10 mA, and operates in TO-236MOD (SC-59) package.

For engineers reviewing the 2SA1313-Y,LF datasheet, 2SA1313-Y,LF pinout, 2SA1313-Y,LF application, or 2SA1313-Y,LF equivalent, key selection criteria include guaranteed hFE linearity at high I_C, complementary pairing with 2SC3325, −50 V breakdown rating, SC-59 footprint compatibility, and suitability for low-voltage analog switching stages.

Technical Context

This PNP bipolar junction transistor uses Toshiba's PCT (Planar Collector Technology) epitaxial process to achieve stable hFE linearity across collector current-critical for distortion-sensitive audio preamp and driver stages. Its −50 V V_CEO and −500 mA I_C absolute max ratings support robust operation in low-power linear and saturated switching modes.

The device is explicitly designated as complementary to the NPN 2SC3325, enabling matched-pair design in push-pull configurations. Its f_T of 200 MHz (typ.) and C_ob of 13 pF (typ.) confirm suitability for audio-band and low-MHz switching, not RF power amplification.

Key Specifications

Pinout & Package

Package: TO-236MOD (JEDEC), identical to JEITA SC-59 and Toshiba 2-3F1A - surface-mount, 3-pin, 0.012 g typical weight, footprint compatible with standard SOT-23 land patterns.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with 2SA1313-Y,LF, 2SA1037AK-TL-E offers superior low-current gain but reduced driver capability, while MMBT4403 provides higher surge current tolerance but no hFE guarantee above −150 mA-making 2SA1313-Y,LF uniquely balanced for audio driver-linearity-critical designs.

Availability

2SA1313-Y,LF is available at Aetrix Electronics and suitable for audio preamplifier modules, discrete power amplifier driver stages, and low-voltage industrial switching circuits requiring stable component supply and long-term obsolescence management.

Supply support for 2SA1313-Y,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete devices, power MOSFETs, and analog ICs, with decades of heritage in bipolar transistor process technology.

The 2SA1313-Y,LF belongs to Toshiba's legacy audio-grade PNP transistor family, engineered specifically for linearity-critical analog signal paths in consumer and professional audio equipment.

FAQ

What is the hFE classification for 2SA1313-Y,LF?

The "Y" suffix in 2SA1313-Y,LF indicates hFE(1) = 120–240 (at V_CE = −1 V, I_C = −100 mA) and hFE(2) ≥40 (at V_CE = −6 V, I_C = −400 mA). This high-linearity bin ensures consistent gain performance across both small- and medium-signal operating points-critical for minimizing distortion in 2SA1313-Y,LF-based amplifier stages.

Is 2SA1313-Y,LF RoHS compliant?

Yes, 2SA1313-Y,LF is RoHS compliant and lead-free (LF suffix denotes lead-free plating). It meets EU Directive 2011/65/EU requirements, with all homogeneous materials verified per IEC 62321. Full compliance documentation, including test reports and substance declarations, is available upon request for 2SA1313-Y,LF procurement.

Can 2SA1313-Y,LF be used as a direct replacement for 2SA1313-O,LF?

No-2SA1313-Y,LF and 2SA1313-O,LF differ in hFE binning: Y guarantees hFE(2) ≥40, while O guarantees only ≥25 at −400 mA. Substituting them without circuit revalidation may affect gain stability in driver stages. The 2SA1313-Y,LF is not a drop-in replacement for O-grade unless the design margin accommodates the higher minimum hFE.

What is the maximum safe continuous collector current for 2SA1313-Y,LF?

The absolute maximum I_C is −500 mA, but continuous operation should be limited to ≤−400 mA to maintain hFE ≥40 and avoid thermal runaway. At 25°C ambient, derating begins above 150 mW dissipation-so sustained −400 mA requires V_CE < −0.375 V to stay within 200 mW P_C. For reliable long-term use, 2SA1313-Y,LF is best applied at ≤−250 mA continuous.

Does 2SA1313-Y,LF have a documented SPICE model?

Toshiba does not publish an official SPICE model for 2SA1313-Y,LF. However, generic PNP models (e.g., Q2N2222 with adjusted parameters) can be adapted using published DC and AC characteristics: V_BE = −0.8 V (typ.), f_T = 200 MHz, C_ob = 13 pF, and hFE = 180 (typ.). For precision simulation of 2SA1313-Y,LF, empirical curve-fitting to datasheet I_C–V_CE and hFE data is recommended.