onsemi 2SA1339S-AC

Overview

2SA1339S-AC from SANYO is a PNP epitaxial planar silicon transistor optimized for high-speed switching, with V_CEO = −50 V, I_C = −500 mA, f_T = 200 MHz, and h_FE = 100–200 (at I_C = −10 mA). It serves as the complementary pair to 2SC3393 in push-pull amplifier and switching power supply output stages.

For engineers reviewing the 2SA1339S-AC datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE binning (Rank S: 100–200), FBET process-enhanced switching speed, V_CE(sat) ≤ −0.5 V at I_C/I_B = 10, and operation up to T_j = 150 °C in compact SOT-323 (SC-70) package.

Technical Context

This PNP transistor employs SANYO's FBET (Flat Base Epitaxial Transistor) process to achieve high f_T and low saturation voltages. Its DC current gain is binned per Rank S (h_FE = 100–200 at V_CE = −5 V, I_C = −10 mA), and it supports fast switching with t_d ≈ 35 ns, t_r ≈ 120 ns, t_f ≈ 100 ns, and t_s ≈ 400 ns under V_CC = 20 V, I_C = 10 mA conditions.

The device operates in common-emitter configuration with fixed bias or active drive, and its Cob = 6.5 pF at V_CB = −10 V enables stable RF and high-frequency digital switching up to ~100 MHz without parasitic oscillation in properly decoupled layouts.

Key Specifications

Pinout & Package

2SA1339S-AC is housed in a SOT-323 (SC-70) plastic surface-mount package measuring 2.2 mm × 1.35 mm × 0.95 mm, with gull-wing leads and standard JEDEC MO-203AA footprint. The package supports reflow soldering per J-STD-020 and provides adequate thermal dissipation for ≤300 mW operation at board-level ambient ≤60 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-speed switching transistor applications.

Compared with 2SA1339S-AC, 2SA1037AK-TL-E offers higher DC gain consistency but trades 20 MHz f_T; BC807-40-7-F delivers broader h_FE range and lower cost but reduces maximum operating voltage and switching bandwidth-making 2SA1339S-AC optimal for 24–48 V, >100 MHz switching where gain binning and speed are jointly critical.

Availability

2SA1339S-AC is available at Aetrix Electronics and suitable for high-speed switching, audio output stages, and DC-DC converter designs requiring stable component supply, consistent h_FE binning, and SOT-323 footprint compatibility.

Supply support for 2SA1339S-AC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog and discrete devices, later integrated into ON Semiconductor in 2011.

The 2SA1339S-AC belongs to SANYO's high-speed PNP transistor family designed for compact, high-efficiency switching in portable audio, power management, and industrial control equipment.

FAQ

What is the h_FE range specified for 2SA1339S-AC?

The 2SA1339S-AC is binned to Rank S, with DC current gain h_FE = 100–200 measured at V_CE = −5 V and I_C = −10 mA. This tight binning ensures predictable bias point stability across production lots and simplifies design of gain-critical stages like audio preamplifiers or precision current mirrors using the 2SA1339S-AC.

Does 2SA1339S-AC have a complementary NPN counterpart?

Yes, the 2SC3393 is the designated complementary NPN transistor for the 2SA1339S-AC. Both share identical SOT-323 packaging, matched f_T (200 MHz), V_CEO/V_CEO ratings (−50 V / +50 V), and h_FE binning structure-enabling symmetrical push-pull output stages, Class-B amplifiers, and balanced switching converters using the 2SA1339S-AC and 2SC3393 pair.

What is the maximum junction temperature for 2SA1339S-AC?

The absolute maximum junction temperature (T_j) for the 2SA1339S-AC is 150 °C. Derating is required above T_a = 25 °C: power dissipation drops linearly to zero at T_a = 125 °C. Thermal design must ensure that under worst-case I_C and V_CE conditions, the 2SA1339S-AC junction remains below this limit to maintain reliability and parametric stability.

Can 2SA1339S-AC be used in RF amplifier applications?

The 2SA1339S-AC exhibits f_T = 200 MHz and Cob = 6.5 pF at V_CB = −10 V, supporting stable small-signal amplification up to ~100 MHz. While not optimized for narrowband VHF/UHF power amplification, it is suitable for broadband IF stages, low-power oscillator buffers, and wideband driver applications where gain flatness and phase linearity are less critical than switching performance-provided layout minimizes stray capacitance and the 2SA1339S-AC is operated within its SOA limits.

What is the typical V_CE(sat) for 2SA1339S-AC at rated current?

At I_C = −500 mA and I_B = −50 mA (I_C/I_B = 10), the 2SA1339S-AC typically achieves V_CE(sat) ≤ −0.5 V. This low saturation voltage directly reduces conduction loss and self-heating in switching applications, enabling efficient operation in battery-powered devices and thermally constrained PCB layouts where the 2SA1339S-AC is deployed.