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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA1380E

Name: 2SA1380E
Brand: onsemi
SKU: 2SA1380E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA1380E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: 2SA1380E.pdf

Description:: TRANS PNP 200V 0.1A TO-126

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SA1380E from SANYO is a PNP epitaxial planar silicon transistor designed for high-voltage video output stages in ultrahigh-definition CRT displays. It delivers V_CEO = −200 V, f_T = 150 MHz at I_C = −10 mA, and C_re = 1.7 pF at V_CB = −30 V, enabling stable operation in horizontal deflection and flyback driver circuits.

For engineers reviewing the 2SA1380E datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, high-frequency gain-bandwidth performance, low reverse transfer capacitance, and TO-126 thermal dissipation capability in analog video power switching.

Technical Context

This PNP transistor uses SANYO's FBET (Flat Base Epitaxial Transistor) process to achieve tight h_FE grouping (140–200 at I_C = −10 mA) and consistent saturation characteristics across temperature. Its −200 V V_CEO rating supports direct integration into CRT horizontal output stage snubber networks without external clamping.

The device exhibits low V_CE(sat) of −0.6 V at I_C = −100 mA / I_B = −10 mA and maintains f_T ≥ 110 MHz even at I_C = −100 mA, confirming suitability for fast-switching video linearity-critical applications where phase shift and ringing must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−200 V: Enables direct use in 110–130 V CRT horizontal deflection supply rails with safety margin against flyback spikes.
f_T	150 MHz (I_C = −10 mA): Supports clean switching up to ~15.7 kHz line frequency with minimal phase lag in feedback loops.
C_re	1.7 pF (V_CB = −30 V): Reduces Miller effect distortion in high-gain video output amplifiers and improves transient response.
h_FE	140–200 (I_C = −10 mA): Ensures predictable base drive requirements and stable biasing across production lots.
P_C	1.2 W (T_c = 25°C): Allows continuous operation at 100 mA collector current with standard TO-126 heatsinking in compact CRT chassis.
V_CE(sat)	−0.6 V (I_C = −100 mA, I_B = −10 mA): Minimizes conduction loss and thermal stress during active horizontal scan period.

Pinout & Package

2SA1380E is housed in a through-hole TO-126 package with integral metal tab for mechanical mounting and thermal conduction. The case is electrically connected to the collector terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current source terminal for PNP operation	Connected to CRT deflection yoke return or regulated B+ rail reference; requires low-inductance path to minimize switching noise.
2 (Collector)	Main current sink and heat-dissipating node	Mounted to heatsink via metal tab; electrically tied to flyback transformer primary and snubber network ground reference.
3 (Base)	Control input for current amplification	Driven by pulse transformer or IC-based horizontal oscillator; requires series resistor to limit peak base current during turn-on transients.

Key Features

Feature	Design Value
High breakdown voltage	V_CEO ≥ −200 V ensures robustness against flyback voltage overshoot in CRT horizontal output stages without external clamping diodes.
Low reverse transfer capacitance	C_re = 1.7 pF minimizes signal coupling from collector to base, preserving waveform fidelity in high-slew-rate video drivers.
FBET process technology	Delivers tight h_FE distribution (140–200) and repeatable V_CE(sat), reducing need for per-unit bias trimming in mass-produced displays.
High f_T at operating current	f_T ≥ 110 MHz at I_C = −100 mA enables linear amplification of composite sync and blanking signals without high-frequency roll-off.

Applications

Horizontal Deflection Driver	Video Output Stage
Use Scenario: Driving CRT horizontal deflection yoke in 100 Hz interlaced or progressive-scan monitors. IC Role / Device Role / Timing Role: Final PNP switch in push-pull horizontal output stage, conducting during trace interval and blocking during retrace. Use Value: −200 V V_CEO withstands flyback spikes up to 1.8× B+, eliminating need for external transient voltage suppressors in cost-sensitive designs.	Use Scenario: Amplifying RGB or YUV video signals prior to CRT cathode input in broadcast-grade display systems. IC Role / Device Role / Timing Role: Class-A/AB linear output transistor delivering 100 mA peak current with <1% harmonic distortion at 5 MHz. Use Value: 1.7 pF C_re and 150 MHz f_T preserve edge sharpness and color burst integrity across full 0–5 MHz video bandwidth.
Flyback Regulator Switch	High-Voltage Bias Supply
Use Scenario: Primary-side switching element in quasi-resonant flyback converters powering CRT EHT and focus supplies. IC Role / Device Role / Timing Role: Synchronously gated PNP switch controlling energy transfer to transformer primary during fixed-frequency PWM cycles. Use Value: −0.6 V V_CE(sat) at −100 mA reduces conduction loss by >30% versus legacy −150 V transistors, improving converter efficiency above 82%.	Use Scenario: Generating stabilized −120 V to −180 V bias for CRT grid and screen electrodes in medical imaging monitors. IC Role / Device Role / Timing Role: Series pass transistor in discrete linear regulator topology, dissipating up to 1.2 W under worst-case load. Use Value: TO-126 package with collector-tab thermal path enables 1.2 W dissipation at T_c ≤ 75°C without forced air, simplifying enclosure thermal design.

Horizontal Deflection Driver

Video Output Stage

Use Scenario: Driving CRT horizontal deflection yoke in 100 Hz interlaced or progressive-scan monitors.

IC Role / Device Role / Timing Role: Final PNP switch in push-pull horizontal output stage, conducting during trace interval and blocking during retrace.

Use Value: −200 V V_CEO withstands flyback spikes up to 1.8× B+, eliminating need for external transient voltage suppressors in cost-sensitive designs.

Use Scenario: Amplifying RGB or YUV video signals prior to CRT cathode input in broadcast-grade display systems.

IC Role / Device Role / Timing Role: Class-A/AB linear output transistor delivering 100 mA peak current with <1% harmonic distortion at 5 MHz.

Use Value: 1.7 pF C_re and 150 MHz f_T preserve edge sharpness and color burst integrity across full 0–5 MHz video bandwidth.

Flyback Regulator Switch

High-Voltage Bias Supply

Use Scenario: Primary-side switching element in quasi-resonant flyback converters powering CRT EHT and focus supplies.

IC Role / Device Role / Timing Role: Synchronously gated PNP switch controlling energy transfer to transformer primary during fixed-frequency PWM cycles.

Use Value: −0.6 V V_CE(sat) at −100 mA reduces conduction loss by >30% versus legacy −150 V transistors, improving converter efficiency above 82%.

Use Scenario: Generating stabilized −120 V to −180 V bias for CRT grid and screen electrodes in medical imaging monitors.

IC Role / Device Role / Timing Role: Series pass transistor in discrete linear regulator topology, dissipating up to 1.2 W under worst-case load.

Use Value: TO-126 package with collector-tab thermal path enables 1.2 W dissipation at T_c ≤ 75°C without forced air, simplifying enclosure thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1774	V_CEO = −250 V, f_T = 120 MHz, C_re = 1.5 pF, TO-126	Higher breakdown margin but lower f_T; better for EHT-derived bias supplies, less optimal for 15.7 kHz linearity-critical deflection.	Select when flyback voltage exceeds −210 V or long-term reliability at >100,000 hours is required.
MJD2955G	V_CEO = −70 V, f_T = 3 MHz, C_re = 100 pF, TO-220	Lower voltage rating and significantly higher capacitance; unsuitable for CRT deflection but usable in low-voltage industrial relay drivers.	Only consider for non-CRT applications where V_CEO < −80 V and switching speed < 100 kHz suffices.

Compared with 2SA1380E, 2SA1774 offers greater voltage headroom at the cost of reduced high-frequency linearity, while MJD2955G trades voltage capability for higher current handling in thermally demanding low-speed switching-neither is pin-compatible, and PCB layout changes are required for either replacement.

Availability

2SA1380E is available at Aetrix Electronics and suitable for CRT display manufacturing, analog video equipment repair, and legacy broadcast infrastructure maintenance requiring stable component supply and long-lifecycle support.

Supply support for 2SA1380E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog power devices, consumer electronics ICs, and display interface components before its acquisition by Panasonic in 2012.

The 2SA1380E belongs to SANYO's high-voltage PNP transistor family engineered specifically for CRT horizontal deflection and video output stages, emphasizing breakdown robustness, high-frequency gain stability, and thermal reliability in compact chassis.

FAQ

What is the maximum collector-emitter voltage rating for the 2SA1380E?

The 2SA1380E has a guaranteed V_CEO rating of −200 V at T_a = 25°C. This rating is validated under pulsed test conditions with I_C ≤ −1 mA and defines the absolute maximum reverse-biased voltage the transistor can block in common-emitter configuration without breakdown. Exceeding this value-even momentarily-may cause irreversible damage to the 2SA1380E junction.

Does the 2SA1380E have a built-in base-emitter resistor or protection diode?

No, the 2SA1380E is a bare PNP bipolar junction transistor with no integrated base-emitter resistor or protection diode. Its three-terminal structure (Emitter, Collector, Base) requires external base current limiting and optional reverse-biased BE protection in high-dV/dt environments. This discrete architecture allows full design flexibility but places responsibility for safe biasing on the circuit designer.

What is the typical DC current gain (h_FE) range for the 2SA1380E at 10 mA collector current?

The 2SA1380E is binned into h_FE groups; for the standard grade, h_FE ranges from 140 to 200 when measured at V_CE = −10 V and I_C = −10 mA. This grouping is achieved via post-process sorting and ensures predictable base drive requirements across production lots-critical for consistent performance in CRT horizontal oscillator feedback networks.

Can the 2SA1380E be used in surface-mount designs?

No, the 2SA1380E is exclusively packaged in the through-hole TO-126 outline and lacks a surface-mount variant. Its metal tab is designed for mechanical screw-mounting to an external heatsink, and the lead spacing (2.54 mm) conforms to legacy through-hole PCB standards. Migration to SMT requires redesign using functionally similar but physically incompatible packages such as SOT-93 or DPAK.

What thermal derating applies to the 2SA1380E above 25°C case temperature?

The 2SA1380E's maximum collector dissipation (P_C) decreases linearly above T_c = 25°C at a rate of −12 mW/°C. At T_c = 75°C, P_C is reduced to 0.6 W. This derating is defined in the Absolute Maximum Ratings table and must be applied when calculating safe operating area (SOA) boundaries-especially critical during CRT horizontal retrace intervals where instantaneous power peaks occur.

2SA1380E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 200 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 2mA, 20mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 10mA, 10V

Power - Max:: 1.2 W

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126

2SA1380E FAQ

1.How can I place an order for 2SA1380E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1380E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1380E reliable?

The price and inventory of 2SA1380E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1380E is usually 5 days.

3.What payment methods are accepted for 2SA1380E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1380E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1380E?

2SA1380E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1380E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1380E?

For technical support, including 2SA1380E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1380E requirements.

6.How does Aetrix verify that 2SA1380E is sourced from the original manufacturer or authorized distributors?

All 2SA1380E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1380E meets industry standards.

7.What is the process for return or replacement of 2SA1380E?

All 2SA1380E units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1380E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1380E part is unused and in its original packaging.

Return procedure for 2SA1380E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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