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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA1416S-TD-E

Name: 2SA1416S-TD-E
Brand: onsemi
SKU: 2SA1416S-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA1416S-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SA1416S-TD-E.pdf

Description:: TRANS PNP 100V 1A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SA1416S-TD-E from onsemi is a PNP bipolar junction transistor rated for −100 V V_CEO, −1 A continuous collector current, and 500 mW power dissipation in SOT-89 package. It delivers low V_CE(sat) of −0.2 V (typ) at I_C = −400 mA / I_B = −40 mA, f_T of 120 MHz, and h_FE range of 100–400. It is used in high-density hybrid ICs and fast-switching DC-DC converter control stages.

For engineers reviewing the 2SA1416S-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP switching performance under −100 V/−1 A stress, SOT-89 thermal capability on ceramic substrate, low saturation voltage design margin, and RoHS-compliant Pb-free construction.

Technical Context

This device employs FBET and MBIT processes to achieve high breakdown voltage (V_(BR)CBO = −120 V) and fast switching (t_on = 80 ns, t_f = 50 ns) while maintaining low V_CE(sat) and high h_FE. Its −100 V V_CEO rating supports use in industrial power supply rails and relay drivers requiring robust off-state blocking.

The SOT-89 package enables surface-mount integration into compact hybrid modules, with 1.3 W derated dissipation when mounted on a 250 mm² ceramic substrate. Electrical characteristics are specified at T_A = 25°C, with h_FE binned by rank (R/S/T) and validated across −25°C to +75°C operating range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V - Supports operation in −48 V telecom supplies and industrial −100 V bus interfaces without breakdown.
I_C (cont.)	−1 A - Enables direct drive of medium-power loads such as solenoids, LED strings, or gate resistors in half-bridge configurations.
V_CE(sat)	−0.2 V (typ) at I_C = −400 mA - Minimizes conduction loss and self-heating in saturated-switch applications.
f_T	120 MHz - Allows stable operation in high-frequency PWM control loops up to ~10–20 MHz practical switching.
h_FE	100–400 (rank-dependent) - Provides predictable DC gain for bias network design and current mirror accuracy.
P_C (SMT)	500 mW - Specifies maximum steady-state power in standard PCB layout; 1.3 W achievable with ceramic substrate mounting.
C_ob	8.5 pF at V_CB = −10 V - Limits Miller capacitance impact on turn-off speed in high-dV/dt environments.

Pinout & Package

SOT-89 (Case 419AU), 3-pin surface-mount plastic package measuring 4.50 × 2.50 × 1.50 mm with 1.50 mm lead pitch. Designed for reflow soldering and high thermal conductivity when mounted on ceramic substrates.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input for forward-active and saturation biasing; requires current-limited drive to ensure h_FE-based gain stability.
2	Collector	Main current sink node; connected to higher potential (e.g., −48 V rail); must withstand −120 V V_CBO during switching transients.
3	Emitter	Common reference terminal; tied to system ground or negative return path; carries full load current and defines V_BE(sat) drop.

Key Features

Feature	Design Value
FBET/MBIT process technology	Enables simultaneous optimization of breakdown voltage, gain, and switching speed-critical for reliable high-voltage PNP switching.
Low V_CE(sat) (−0.2 V typ)	Reduces power loss by >30% vs. legacy PNP transistors at 400 mA, directly improving thermal margin in space-constrained layouts.
Ultrasmall SOT-89 footprint	Supports ≥2× higher component density in hybrid IC assemblies compared to TO-92 or SOT-23, enabling miniaturized power modules.
RoHS-compliant Pb-free construction	Meets global environmental compliance requirements without derating or reliability trade-offs; qualified per J-STD-020 moisture sensitivity level 3.
High f_T (120 MHz)	Ensures sufficient gain-bandwidth for closed-loop feedback in high-frequency DC-DC controllers and active clamp circuits.

Applications

DC-DC Converter Switching Stage	Industrial Relay Driver
Use Scenario: High-efficiency buck or flyback converter output stage where PNP topology provides low-side switching with fast transient response. IC Role / Device Role / Timing Role: Main power switch operating in saturation/cutoff mode; handles −1 A pulsed load with <80 ns turn-on time. Use Value: Low V_CE(sat) reduces conduction loss by 0.16 W vs. typical −0.4 V devices, lowering thermal stress in sealed enclosures.	Use Scenario: Driving 24 V/1 A industrial relays in PLC I/O modules with reverse-polarity protection and EMI suppression. IC Role / Device Role / Timing Role: High-voltage PNP switch interfacing microcontroller GPIO to relay coil; blocks −100 V transients during coil de-energization. Use Value: V_(BR)CEO = −100 V ensures immunity to inductive kickback spikes exceeding −75 V, eliminating need for external clamping diodes.
Hybrid Power Module Component	Telecom Line Card Bias Control
Use Scenario: Embedded in multilayer ceramic hybrid ICs for base station power management, requiring ultrasmall size and thermal stability. IC Role / Device Role / Timing Role: Current source element in precision bias networks; leverages h_FE binning (Rank R/S/T) for matched gain across channels. Use Value: SOT-89 package allows placement within 0.5 mm of adjacent components, enabling 30% smaller module area than SOT-23 alternatives.	Use Scenario: Providing regulated −48 V bias to op-amps and comparators in telecom line interface cards (LICs). IC Role / Device Role / Timing Role: Linear regulator pass element in low-noise negative LDO configuration; operates in active region with fixed V_CE ≈ −5 V. Use Value: High h_FE (up to 400) minimizes base drive current, reducing quiescent power consumption by >50% versus low-gain PNP alternatives.

DC-DC Converter Switching Stage

Industrial Relay Driver

Use Scenario: High-efficiency buck or flyback converter output stage where PNP topology provides low-side switching with fast transient response.

IC Role / Device Role / Timing Role: Main power switch operating in saturation/cutoff mode; handles −1 A pulsed load with <80 ns turn-on time.

Use Value: Low V_CE(sat) reduces conduction loss by 0.16 W vs. typical −0.4 V devices, lowering thermal stress in sealed enclosures.

Use Scenario: Driving 24 V/1 A industrial relays in PLC I/O modules with reverse-polarity protection and EMI suppression.

IC Role / Device Role / Timing Role: High-voltage PNP switch interfacing microcontroller GPIO to relay coil; blocks −100 V transients during coil de-energization.

Use Value: V_(BR)CEO = −100 V ensures immunity to inductive kickback spikes exceeding −75 V, eliminating need for external clamping diodes.

Hybrid Power Module Component

Telecom Line Card Bias Control

Use Scenario: Embedded in multilayer ceramic hybrid ICs for base station power management, requiring ultrasmall size and thermal stability.

IC Role / Device Role / Timing Role: Current source element in precision bias networks; leverages h_FE binning (Rank R/S/T) for matched gain across channels.

Use Value: SOT-89 package allows placement within 0.5 mm of adjacent components, enabling 30% smaller module area than SOT-23 alternatives.

Use Scenario: Providing regulated −48 V bias to op-amps and comparators in telecom line interface cards (LICs).

IC Role / Device Role / Timing Role: Linear regulator pass element in low-noise negative LDO configuration; operates in active region with fixed V_CE ≈ −5 V.

Use Value: High h_FE (up to 400) minimizes base drive current, reducing quiescent power consumption by >50% versus low-gain PNP alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1037AK-TL-E	Lower V_CEO (−50 V), higher h_FE (200–400), same SOT-89 package, but f_T = 80 MHz.	Not suitable for −100 V bus applications; limited to ≤−48 V systems; better for low-voltage linear biasing.	Select only if system V_CEO stress remains <−45 V and higher DC gain is prioritized over switching speed.
MMDT3906-7-F	Dual PNP in SOT-363; each transistor rated −40 V V_CEO, −200 mA I_C; no h_FE binning; f_T = 250 MHz.	Designed for signal-level logic inversion or dual-channel low-current switching-not for 1 A power switching.	Use only for space-constrained signal routing or dual low-power functions; not a functional replacement for 2SA1416S-TD-E's power handling.

Compared with 2SA1416S-TD-E, the 2SA1037AK-TL-E trades off voltage rating for enhanced gain uniformity, while the MMDT3906-7-F offers higher frequency but lacks the current capacity and breakdown robustness needed for industrial power switching-making 2SA1416S-TD-E uniquely suited for −100 V/−1 A hybrid module integration.

Availability

2SA1416S-TD-E is available at Aetrix Electronics and suitable for DC-DC converter switching stages, industrial relay drivers, and hybrid power module components requiring stable component supply, RoHS compliance, and SOT-89 thermal performance on ceramic substrates.

Supply support for 2SA1416S-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2SA1416S-TD-E belongs to onsemi's high-voltage PNP transistor family engineered for fast-switching, high-density hybrid IC integration-targeting industrial power conversion, telecom infrastructure, and ruggedized embedded controls.

FAQ

What is the maximum continuous collector current rating for the 2SA1416S-TD-E?

The 2SA1416S-TD-E is rated for −1 A continuous collector current (I_C) at T_A = 25°C. This rating assumes proper PCB thermal management; derating applies above 25°C ambient, with full derating to zero at 150°C junction temperature. The device also supports −2 A pulsed current (I_CP) for short durations defined by the SOA curve.

Is the 2SA1416S-TD-E pin-compatible with the 2SC3646S-TD-E?

No-the 2SA1416S-TD-E is a PNP transistor while the 2SC3646S-TD-E is its complementary NPN counterpart; both share identical SOT-89 pinout (Base–Collector–Emitter on pins 1–2–3), but polarity reversal means they cannot be substituted without circuit redesign. Their electrical roles are inverse: 2SA1416S-TD-E sinks current, whereas 2SC3646S-TD-E sources it.

What does the "AB" marking on the 2SA1416S-TD-E package indicate?

The "AB" top-side marking on the 2SA1416S-TD-E identifies the device as a 2SA1416 variant with h_FE Rank R (100–200) per the datasheet's binning table. This marking is laser-etched on the SOT-89 body and correlates directly to DC current gain performance-critical for matching in differential pairs or precision current mirrors.

Can the 2SA1416S-TD-E be used in linear regulator applications?

Yes-the 2SA1416S-TD-E supports linear operation with V_CE down to −5 V and h_FE stable across I_C = −1 mA to −500 mA. Its low V_CE(sat) and high f_T make it suitable as a pass transistor in negative LDOs, provided power dissipation stays within 500 mW (or 1.3 W with ceramic substrate) and thermal design accounts for ambient rise.

Does the 2SA1416S-TD-E meet RoHS and lead-free requirements?

Yes-the 2SA1416S-TD-E is explicitly marked "Pb-Free" in the ordering information and complies with RoHS Directive 2011/65/EU. It uses lead-free terminations and halogen-free molding compound, qualified per JEDEC J-STD-020 moisture sensitivity level 3, and ships in tape-and-reel packaging per industry standards.

2SA1416S-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 40mA, 400mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 5V

Power - Max:: 500 mW

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SA1416S-TD-E FAQ

1.How can I place an order for 2SA1416S-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1416S-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1416S-TD-E reliable?

The price and inventory of 2SA1416S-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1416S-TD-E is usually 5 days.

3.What payment methods are accepted for 2SA1416S-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1416S-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1416S-TD-E?

2SA1416S-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1416S-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1416S-TD-E?

For technical support, including 2SA1416S-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1416S-TD-E requirements.

6.How does Aetrix verify that 2SA1416S-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SA1416S-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1416S-TD-E meets industry standards.

7.What is the process for return or replacement of 2SA1416S-TD-E?

All 2SA1416S-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1416S-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1416S-TD-E part is unused and in its original packaging.

Return procedure for 2SA1416S-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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