onsemi 2SA1416T-TD-E

Overview

2SA1416T-TD-E from onsemi is a PNP bipolar junction transistor designed for medium-power switching and amplification in compact surface-mount applications. It delivers −100 V V_CEO, −1 A continuous collector current, 120 MHz f_T, low −0.4 V typical V_CE(sat) at −400 mA/−40 mA drive, and operates up to 150°C junction temperature - used in DC-DC converter control stages and relay drivers.

For engineers reviewing the 2SA1416T-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SOT-89 package thermal performance, guaranteed h_FE ≥100 at −100 mA, V_(BR)CBO = −120 V rating, and RoHS-compliant Pb-free construction.

Technical Context

This device employs FBET and MBIT processes to achieve high breakdown voltage with fast switching (t_on = 80 ns, t_f = 50 ns) and low saturation voltage. Its design targets high-density hybrid ICs where space-constrained PCB layouts require ultrasmall SOT-89 packaging without sacrificing ruggedness.

The 2SA1416T-TD-E is rated for 1.3 W collector dissipation when mounted on a 250 mm² ceramic substrate, enabling stable operation under pulsed loads up to I_CP = −2 A. Its Cob = 8.5 pF at V_CB = −10 V supports high-frequency switching integrity in SMPS feedback paths.

Key Specifications

Pinout & Package

Package: SOT-89 (Case 419AU), 4.50 × 2.50 × 1.50 mm, surface-mount, thermally enhanced with exposed collector tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching applications.

Compared with 2SA1416T-TD-E, the 2SA1037AK-TL-E trades off voltage headroom for tighter gain control in low-voltage designs, while the MMDT3906-7-F sacrifices current capacity and ruggedness for ultra-compact dual-transistor integration - neither offers drop-in replacement capability due to voltage, current, or thermal limitations.

Availability

2SA1416T-TD-E is available at Aetrix Electronics and suitable for DC-DC converter control, industrial relay drivers, and automotive body control modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for 2SA1416T-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SA1416T-TD-E belongs to onsemi's general-purpose bipolar transistor family engineered for high-reliability switching and amplification in space-constrained, thermally demanding environments.

FAQ

What is the maximum safe operating voltage for 2SA1416T-TD-E?

The 2SA1416T-TD-E has an absolute maximum V_CEO rating of −100 V and V_CBO of −120 V. For reliable long-term operation, design should limit collector-to-emitter voltage to ≤80% of V_CEO (i.e., −80 V) under transient conditions. The 2SA1416T-TD-E must never be operated beyond its specified absolute maximum ratings to prevent junction breakdown or accelerated degradation.

Is 2SA1416T-TD-E pin-compatible with 2SC3646T-TD-E?

No - the 2SA1416T-TD-E is a PNP transistor while the 2SC3646T-TD-E is its complementary NPN counterpart; both share identical SOT-89 pinout (Base–Collector–Emitter), but polarity reversal means they cannot substitute directly. The 2SA1416T-TD-E requires negative base drive relative to emitter, whereas the 2SC3646T-TD-E needs positive base drive - using one in place of the other will result in non-functional circuit behavior.

Does 2SA1416T-TD-E support pulse current operation?

Yes - the 2SA1416T-TD-E is rated for I_CP = −2 A under pulse conditions (single pulse, 1 ms width, duty cycle ≤1%). This capability enables short-duration surge handling in motor startup or inductive load switching. Thermal design must account for peak power dissipation during pulses, and the 2SA1416T-TD-E must be mounted on a ceramic substrate per datasheet Note 1 to sustain this rating reliably.

What h_FE rank does 2SA1416T-TD-E carry?

The 2SA1416T-TD-E is unmarked for h_FE rank in the provided datasheet; only the 2SA1416S-TD-E (AB marking) and 2SC3646 variants specify R/S/T bins. Therefore, the 2SA1416T-TD-E falls within the full h_FE range of 100–400 at I_C = −100 mA, V_CE = −5 V. Designers should verify gain tolerance in-circuit or select the S-suffix version if tight h_FE control is required for the 2SA1416T-TD-E application.

Can 2SA1416T-TD-E be used in linear amplifier configurations?

Yes - the 2SA1416T-TD-E supports linear operation with specified V_BE(sat), h_FE, and f_T parameters. Its 120 MHz f_T and broad h_FE range make it suitable for audio preamplifiers or sensor signal conditioning where moderate bandwidth and gain stability are needed. However, the 2SA1416T-TD-E is optimized for switching; for precision analog use, dedicated low-noise PNP transistors with tighter parameter distributions are recommended.