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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA1418S-TD-E

Name: 2SA1418S-TD-E
Brand: onsemi
SKU: 2SA1418S-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA1418S-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SA1418S-TD-E.pdf

Description:: TRANS PNP 160V 0.7A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SA1418S-TD-E from onsemi is a PNP bipolar junction transistor rated for −160 V V_CEO, −0.7 A I_C, and 500 mW P_C (on ceramic substrate), featuring low V_CE(sat) of −0.12 V at −250 mA, f_T = 120 MHz, and SC-62 (SOT-89) PCP package. It serves as a high-voltage, medium-current switching or linear amplifier in color TV audio output stages and inverters.

For engineers reviewing the 2SA1418S-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, −180 V V_CBO rating, h_FE range of 100–400 (Rank S), fast switching (t_on = 50 ns, t_f = 60 ns), and Pb-free TD-reel packaging with 1,000 pcs./reel.

Technical Context

This PNP transistor employs FBET and MBIT processes to achieve high breakdown voltage and fast switching performance. Its design supports stable operation up to T_j = 150 °C and includes ultrasmall PCP packaging optimized for high-density hybrid IC integration.

Electrical behavior is characterized by tight parameter control across temperature: V_CE(sat) remains ≤ −0.4 V at −250 mA/−25 mA drive, Cob = 8 pF at −10 V V_CB, and h_FE maintains ≥ 90 at −10 mA while delivering ≥ 100 at −100 mA - enabling reliable biasing in both small-signal and power-switching roles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−160 V - supports high-side switching in 120–150 V DC bus applications without breakdown
I_C	−0.7 A continuous - suitable for audio output stage loads and flyback switch currents
V_CE(sat)	−0.12 V (typ) at −250 mA/−25 mA - minimizes conduction loss and thermal rise in saturated switching
f_T	120 MHz - enables use in RF driver stages and high-speed switching above 10 MHz
h_FE	100–400 (Rank S) - ensures predictable current gain across production lots for stable bias design
P_C	500 mW on ceramic substrate - defines thermal derating envelope for PCB layout with 250 mm² copper area
t_on/t_f	50 ns / 60 ns - supports PWM frequencies up to ~3 MHz with minimal overlap loss

Pinout & Package

2SA1418S-TD-E uses the PCP package, equivalent to JEITA SC-62 and JEDEC SOT-89, with 3 terminals and dimensions of 4.5 × 2.5 × 1.6 mm (L × W × H). Mounting requires soldering to a ceramic substrate (250 mm² × 0.8 mm) for full 500 mW dissipation capability.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input for forward-active or saturation bias; requires current-limited drive to avoid overdrive
2	Collector	Main current sink terminal; connected to high-voltage rail in common-emitter switching configurations
3	Emitter	Current return path; tied to ground or load reference in PNP high-side switch topologies

Key Features

Feature	Design Value
FBET/MBIT process technology	Enables simultaneous high V_BR, low V_CE(sat), and fast t_on/t_f without trade-off compromises
Ultrasmall PCP (SOT-89) footprint	Reduces board area by >40% vs. TO-92, enabling compact hybrid IC layouts and dense power modules
Low leakage I_CBO ≤ −0.1 μA	Ensures stable off-state integrity in high-impedance bias networks and standby circuits
−180 V V_CBO rating	Provides 20 V margin above −160 V V_CEO, improving reliability under transient overvoltage conditions

Applications

Color TV Audio Output Stage	Inverter Primary-Side Switch
Use Scenario: Amplifying line-level audio signals to drive speaker loads in CRT-based color television sets. IC Role / Device Role / Timing Role: PNP emitter-follower output stage providing current gain and low-output-impedance buffering. Use Value: Low V_CE(sat) reduces crossover distortion and thermal stress during sustained 0.5 A peak output.	Use Scenario: Switching primary winding current in flyback or half-bridge inverters for backlight or auxiliary power supplies. IC Role / Device Role / Timing Role: Medium-power PNP switch controlling energy transfer timing in <100 kHz SMPS topologies. Use Value: 120 MHz f_T and 50 ns t_on support clean turn-on edges and reduced switching loss at 50–80 kHz.
High-Voltage Linear Regulator Pass Element	Hybrid IC Power Section
Use Scenario: Acting as series pass transistor in adjustable negative-output regulators supplying −12 V to −48 V rails. IC Role / Device Role / Timing Role: Voltage-controlled current source operating in active region with fixed base bias network. Use Value: −160 V V_CEO and 150 °C T_j rating allow safe operation under load-dump transients and ambient temperatures up to 85 °C.	Use Scenario: Integration into multi-chip hybrid modules combining drivers, protection, and power switching in compact form factors. IC Role / Device Role / Timing Role: Discrete PNP switch embedded alongside resistors, capacitors, and ICs on thick-film ceramic substrates. Use Value: Ultrasmall PCP package and 0.058 g mass enable high component density and thermal compatibility with co-fired ceramic platforms.

Color TV Audio Output Stage

Inverter Primary-Side Switch

Use Scenario: Amplifying line-level audio signals to drive speaker loads in CRT-based color television sets.

IC Role / Device Role / Timing Role: PNP emitter-follower output stage providing current gain and low-output-impedance buffering.

Use Value: Low V_CE(sat) reduces crossover distortion and thermal stress during sustained 0.5 A peak output.

Use Scenario: Switching primary winding current in flyback or half-bridge inverters for backlight or auxiliary power supplies.

IC Role / Device Role / Timing Role: Medium-power PNP switch controlling energy transfer timing in <100 kHz SMPS topologies.

Use Value: 120 MHz f_T and 50 ns t_on support clean turn-on edges and reduced switching loss at 50–80 kHz.

High-Voltage Linear Regulator Pass Element

Hybrid IC Power Section

Use Scenario: Acting as series pass transistor in adjustable negative-output regulators supplying −12 V to −48 V rails.

IC Role / Device Role / Timing Role: Voltage-controlled current source operating in active region with fixed base bias network.

Use Value: −160 V V_CEO and 150 °C T_j rating allow safe operation under load-dump transients and ambient temperatures up to 85 °C.

Use Scenario: Integration into multi-chip hybrid modules combining drivers, protection, and power switching in compact form factors.

IC Role / Device Role / Timing Role: Discrete PNP switch embedded alongside resistors, capacitors, and ICs on thick-film ceramic substrates.

Use Value: Ultrasmall PCP package and 0.058 g mass enable high component density and thermal compatibility with co-fired ceramic platforms.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1037AK-TL-E	Lower V_CEO (−50 V), higher h_FE (200–400), same SOT-89 package	Not suitable for >−60 V applications; limited to low-voltage logic-level switching	Select only when system voltage ≤ −50 V and high DC gain is prioritized over breakdown margin
MMDT3906-7-F	Dual PNP in SOT-363; V_CEO = −40 V, I_C = −200 mA, smaller footprint	Insufficient current/voltage rating for TV audio or inverter use; intended for signal-level logic	Use only in space-constrained, low-power bias or level-shift functions-not as direct functional replacement

Compared with 2SA1418S-TD-E, the 2SA1037AK-TL-E sacrifices 110 V of breakdown headroom for tighter h_FE tolerance, while MMDT3906-7-F trades single-device robustness for dual-channel integration at one-third the current capacity - neither matches the original's −160 V/−0.7 A operating envelope.

Availability

2SA1418S-TD-E is available at Aetrix Electronics and suitable for color TV audio output stages, inverter primary-side switching, high-voltage linear regulator pass elements, and hybrid IC power sections requiring stable component supply and Pb-free compliance.

Supply support for 2SA1418S-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SA1418S-TD-E belongs to onsemi's general-purpose bipolar transistor product line, engineered for high-voltage analog and switching applications where ruggedness, consistent gain, and fast response are critical - especially in legacy consumer video and power conversion systems.

FAQ

What is the maximum collector-emitter voltage rating for the 2SA1418S-TD-E?

The 2SA1418S-TD-E has a guaranteed V_CEO rating of −160 V at T_a = 25 °C. This rating is validated under specified test conditions with R_BE = ∞ and I_C = −1 mA. Exceeding this voltage risks avalanche breakdown and permanent device damage. Derating is required above 25 °C ambient per the PC–Ta curve in the datasheet.

Is the 2SA1418S-TD-E RoHS-compliant and lead-free?

Yes, the 2SA1418S-TD-E is Pb-free and RoHS-compliant, as confirmed by its "-E" suffix and explicit "Pb Free" marking in the Ordering Information table. The device meets EU Directive 2011/65/EU requirements, with lead content below 1000 ppm and no restricted substances above threshold limits.

What does the "S" in 2SA1418S-TD-E indicate?

The "S" denotes the h_FE Rank S classification, specifying a DC current gain range of 140–280 at V_CE = −5 V and I_C = −100 mA. This distinguishes it from Rank R (100–200) and Rank T (200–400) variants in the same family, enabling precise bias design in production-critical applications.

Can the 2SA1418S-TD-E be used in surface-mount reflow processes?

Yes, the 2SA1418S-TD-E is qualified for standard SnPb and lead-free reflow soldering per J-STD-020. Its PCP (SOT-89) package withstands peak temperatures up to 260 °C for ≤ 10 seconds. Thermal profile must respect maximum junction temperature (150 °C) and avoid exceeding 230 °C for >60 seconds to prevent metallization degradation.

How is the 2SA1418S-TD-E marked on the package?

The 2SA1418S-TD-E is marked with "2SA1418S", "TD", "AD", and a lot code (e.g., "CD" + alphanumeric LOT No.) on the top surface. Marking follows JEITA EIAJ standards and appears in laser-etched format for readability after assembly. The "TD" indicates tape-and-reel packaging with 1,000 pcs./reel.

2SA1418S-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 700 mA

Voltage - Collector Emitter Breakdown (Max):: 160 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 25mA, 250mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 5V

Power - Max:: 500 mW

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SA1418S-TD-E FAQ

1.How can I place an order for 2SA1418S-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1418S-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1418S-TD-E reliable?

The price and inventory of 2SA1418S-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1418S-TD-E is usually 5 days.

3.What payment methods are accepted for 2SA1418S-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1418S-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1418S-TD-E?

2SA1418S-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1418S-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1418S-TD-E?

For technical support, including 2SA1418S-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1418S-TD-E requirements.

6.How does Aetrix verify that 2SA1418S-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SA1418S-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1418S-TD-E meets industry standards.

7.What is the process for return or replacement of 2SA1418S-TD-E?

All 2SA1418S-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1418S-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1418S-TD-E part is unused and in its original packaging.

Return procedure for 2SA1418S-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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