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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA1418T-TD-E

Name: 2SA1418T-TD-E
Brand: onsemi
SKU: 2SA1418T-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA1418T-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SA1418T-TD-E.pdf

Description:: TRANS PNP 160V 0.7A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SA1418T-TD-E from onsemi is a PNP bipolar junction transistor rated for −160 V V_CEO, −0.7 A I_C, and 500 mW P_C (ceramic substrate), featuring low V_CE(sat) of −0.12 V at −250 mA, f_T = 120 MHz, and SC-62 (SOT-89) package. It serves in color TV audio output stages and high-voltage switching inverters.

For engineers reviewing the 2SA1418T-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed −160 V breakdown, h_FE rank T (200–400 at −100 mA), fast switching (t_on = 50 ns, t_f = 60 ns), and Pb-free TD reel packaging with 1,000 pcs/reel.

Technical Context

This PNP transistor uses FBET and MBIT processes to achieve high breakdown voltage and large current capacity while maintaining ultrasmall SC-62 footprint. Its design supports stable operation up to T_j = 150 °C with V_(BR)CBO = −180 V and V_(BR)EBO = −6 V.

Electrical behavior is characterized by two h_FE bins: h_FE1 = 100–400 at −100 mA/−5 V and h_FE2 = 90 min at −10 mA/−5 V. Switching performance is validated using standardized test circuits with defined pulse width (20 μs), duty cycle (≤1%), and bias conditions (I_C = 20I_B).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−160 V - supports high-side switching in 120–150 V DC bus applications without avalanche stress
I_C	−0.7 A continuous - suitable for medium-power audio driver and inverter switch stages
V_CE(sat)	−0.12 V max at −250 mA/−25 mA - reduces conduction loss and thermal rise in linear and saturated operation
f_T	120 MHz - enables use in high-frequency switching up to ~10–20 MHz practical bandwidth
h_FE (Rank T)	200–400 at −100 mA/−5 V - ensures predictable gain stability across production lots for feedback control loops
t_on/t_f	50 ns / 60 ns - supports <100 ns total switching transitions for efficient PWM operation
P_C (ceramic)	1.3 W - allows higher power dissipation than standard PCB mounting, reducing heatsink need

Pinout & Package

2SA1418T-TD-E is housed in a PCP package conforming to JEITA SC-62 and JEDEC SOT-89 standards, with 3-pin surface-mount configuration and 0.058 g mass. Dimensions: 4.5 mm × 2.5 mm × 1.6 mm (L×W×H), 1.5 mm lead pitch, and 0.4 mm lead thickness.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input for forward-active and saturation bias; requires −25 mA drive for full turn-on at −250 mA collector load
2	Collector	High-voltage current sink node; connected to −160 V rail in inverter topologies or audio output collectors
3	Emitter	Common reference terminal; tied to ground or negative supply rail in common-emitter configurations

Key Features

Feature	Design Value
FBET/MBIT process technology	Enables simultaneous high V_BR and low V_CE(sat) without trade-off in ruggedness or speed
Ultrasmall SC-62 footprint	Reduces board area by >40% vs. TO-92, enabling high-density hybrid IC integration
Low leakage (I_CBO ≤ −0.1 μA)	Minimizes standby current in battery-backed or always-on inverter control circuits
Fast storage time control	t_stg = 1000 ns max ensures reliable turn-off in repetitive switching above 100 kHz

Applications

Color TV Audio Output Stage	Inverter High-Side Switch
Use Scenario: Driving loudspeaker loads in analog RGB video signal path amplifiers with ±12 V rails. IC Role / Device Role / Timing Role: PNP emitter-follower output stage providing current gain and low-output-impedance buffering. Use Value: Low V_CE(sat) minimizes crossover distortion and thermal drift under 500 mW average load.	Use Scenario: Controlling DC bus voltage in flyback or half-bridge inverters for backlight drivers. IC Role / Device Role / Timing Role: High-voltage PNP switch operating in saturation during active phase, with fast fall time limiting shoot-through risk. Use Value: 120 MHz f_T and 60 ns t_f support clean 50–100 kHz switching with minimal dead-time overhead.
Hybrid Power Module Component	Industrial DC-DC Converter Driver
Use Scenario: Embedded in compact hybrid ICs for AC-DC adapter secondary-side regulation. IC Role / Device Role / Timing Role: Integrated PNP switch in monolithic power module with ceramic substrate thermal path. Use Value: 1.3 W P_C rating on 250 mm² ceramic enables >2× power density vs. FR-4 PCB mounting.	Use Scenario: Gate driving transformer-coupled MOSFETs in isolated industrial DC-DC converters. IC Role / Device Role / Timing Role: Level-shifting PNP driver delivering −25 mA base current with precise timing control. Use Value: Tight h_FE bin (Rank T) ensures consistent gate drive strength across temperature and lot variance.

Color TV Audio Output Stage

Inverter High-Side Switch

Use Scenario: Driving loudspeaker loads in analog RGB video signal path amplifiers with ±12 V rails.

IC Role / Device Role / Timing Role: PNP emitter-follower output stage providing current gain and low-output-impedance buffering.

Use Value: Low V_CE(sat) minimizes crossover distortion and thermal drift under 500 mW average load.

Use Scenario: Controlling DC bus voltage in flyback or half-bridge inverters for backlight drivers.

IC Role / Device Role / Timing Role: High-voltage PNP switch operating in saturation during active phase, with fast fall time limiting shoot-through risk.

Use Value: 120 MHz f_T and 60 ns t_f support clean 50–100 kHz switching with minimal dead-time overhead.

Hybrid Power Module Component

Industrial DC-DC Converter Driver

Use Scenario: Embedded in compact hybrid ICs for AC-DC adapter secondary-side regulation.

IC Role / Device Role / Timing Role: Integrated PNP switch in monolithic power module with ceramic substrate thermal path.

Use Value: 1.3 W P_C rating on 250 mm² ceramic enables >2× power density vs. FR-4 PCB mounting.

Use Scenario: Gate driving transformer-coupled MOSFETs in isolated industrial DC-DC converters.

IC Role / Device Role / Timing Role: Level-shifting PNP driver delivering −25 mA base current with precise timing control.

Use Value: Tight h_FE bin (Rank T) ensures consistent gate drive strength across temperature and lot variance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1037AK-T146Q	V_CEO = −50 V, I_C = −0.15 A, SOT-323 package	Limited to low-voltage logic-level switching; not suitable for >60 V bus applications	Select only when V_CE stress remains below −40 V and board space is critical
MJD2955G	V_CEO = −70 V, I_C = −10 A, TO-220 package	Higher current but lower voltage rating and larger footprint; requires heatsink above 1 W	Prefer for >5 A loads where −160 V rating is unnecessary and thermal mass is available

Compared with 2SA1418T-TD-E, the 2SA1037AK-T146Q trades voltage headroom for miniaturization, while MJD2955G sacrifices voltage rating and package size for raw current capacity-neither offers drop-in replacement capability due to mismatched V_CEO, package, or gain binning.

Availability

2SA1418T-TD-E is available at Aetrix Electronics and suitable for color TV audio output stages, inverter high-side switches, and hybrid power module designs requiring stable component supply, Pb-free compliance, and consistent Rank T h_FE binning.

Supply support for 2SA1418T-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and connectivity solutions.

The 2SA1418 series belongs to onsemi's legacy high-voltage bipolar transistor product line, engineered specifically for reliability-critical analog switching in consumer video and industrial power conversion systems.

FAQ

What is the maximum continuous collector current rating for the 2SA1418T-TD-E?

The 2SA1418T-TD-E has a maximum continuous collector current I_C of −0.7 A at T_a = 25 °C when mounted on a ceramic substrate (250 mm² × 0.8 mm). Derating applies above 25 °C ambient per the PC–Ta curve in the datasheet. Pulse current I_CP reaches −1.5 A for short durations. This rating directly defines its suitability for medium-power audio and inverter switching roles in the 2SA1418T-TD-E application space.

Does the 2SA1418T-TD-E have Pb-free packaging and RoHS compliance?

Yes, the 2SA1418T-TD-E is Pb-free and RoHS compliant, as confirmed by the "Pb Free" marking in the Ordering Information section and the TD reel packaging specification. The device meets EU RoHS Directive 2011/65/EU and is compatible with lead-free reflow soldering profiles. This compliance is integral to the 2SA1418T-TD-E's qualification for modern consumer electronics manufacturing.

What does the 'T' suffix in 2SA1418T-TD-E indicate?

The 'T' in 2SA1418T-TD-E denotes the h_FE gain rank-specifically Rank T, corresponding to a DC current gain range of 200–400 at −100 mA and −5 V. This binning ensures predictable amplification behavior in feedback-sensitive circuits. The full part number 2SA1418T-TD-E thus identifies both the transistor type and its verified gain performance band, distinguishing it from 2SA1418S-TD-E (Rank S) and other variants.

Can the 2SA1418T-TD-E be used in place of the 2SA1418S-TD-E?

No-the 2SA1418T-TD-E and 2SA1418S-TD-E share identical package, pinout, and absolute ratings, but differ in h_FE binning: Rank T (200–400) vs. Rank S (140–280). Substitution may affect loop gain stability in amplifier or regulator circuits calibrated for S-bin gain. System validation is required before interchanging 2SA1418T-TD-E and 2SA1418S-TD-E in production designs.

What thermal performance can be expected from the 2SA1418T-TD-E on standard FR-4 PCB?

When mounted on standard FR-4 PCB (not ceramic), the 2SA1418T-TD-E's power dissipation is limited to 500 mW (not 1.3 W), as specified in the Absolute Maximum Ratings table. This reflects significantly higher thermal resistance compared to ceramic mounting. Designers must apply appropriate derating curves and verify junction temperature stays below 150 °C under worst-case load conditions for the 2SA1418T-TD-E.

2SA1418T-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SA1418T-TD-E FAQ

1.How can I place an order for 2SA1418T-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1418T-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1418T-TD-E reliable?

The price and inventory of 2SA1418T-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1418T-TD-E is usually 5 days.

3.What payment methods are accepted for 2SA1418T-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1418T-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1418T-TD-E?

2SA1418T-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1418T-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1418T-TD-E?

For technical support, including 2SA1418T-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1418T-TD-E requirements.

6.How does Aetrix verify that 2SA1418T-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SA1418T-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1418T-TD-E meets industry standards.

7.What is the process for return or replacement of 2SA1418T-TD-E?

All 2SA1418T-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1418T-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1418T-TD-E part is unused and in its original packaging.

Return procedure for 2SA1418T-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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