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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA1434-TB-E

Name: 2SA1434-TB-E
Brand: onsemi
SKU: 2SA1434-TB-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA1434-TB-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: 2SA1434-TB-E.pdf

Description:: BIP PNP 0.1A 50V

Quantity:: RFQ Add To RFQ list

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Inventory:18,000

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Product details

Overview

2SA1434-TB-E from SANYO is a PNP epitaxial planar silicon transistor designed for low-frequency general-purpose amplification and muting circuits, featuring hFE = 500–1200, V_CEO = −50 V, V_CBO = −60 V, V_EBO ≥ −15 V, and V_CE(sat) ≤ −0.5 V at I_C = −50 mA, I_B = −1 mA.

For engineers reviewing the 2SA1434-TB-E datasheet, pinout, applications, or equivalent options, key selection factors include DC current gain range, low saturation voltage, high reverse emitter-base breakdown, TO-92-compatible small-outline package, and suitability for audio preamp stages and analog switching.

Technical Context

This PNP bipolar junction transistor employs SANYO's FBET (Flat Base Epitaxial Transistor) process to achieve tight hFE distribution and stable low-frequency gain. Its design targets linear amplification and active switching in sub-MHz signal paths, with guaranteed performance at I_C = −10 mA and V_CE = −5 V.

The device operates within a junction temperature range of −55°C to +125°C and supports continuous collector dissipation of 200 mW at T_A = 25°C. Electrical characteristics are fully specified at T_A = 25°C, with f_T ≥ 100 MHz confirming usable bandwidth beyond typical audio and control frequencies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum allowable collector-emitter voltage with base open; defines safe operating voltage headroom in amplifier bias networks.
h_FE	500–1200 - DC current gain range at I_C = −10 mA, V_CE = −5 V; enables high-input-impedance, low-base-drive amplifier designs.
V_CE(sat)	≤ −0.5 V - Collector-emitter saturation voltage at I_C = −50 mA, I_B = −1 mA; ensures minimal power loss and voltage drop in muting/switching applications.
V_EBO	≥ −15 V - Emitter-base breakdown voltage; allows robust biasing and protection against transient reverse bias in multi-stage circuits.
f_T	≥ 100 MHz - Transition frequency at I_C = −10 mA, V_CE = −10 V; confirms usable gain up to mid-VHF, supporting wideband audio and pulse applications.
P_C	200 mW - Maximum collector power dissipation at T_A = 25°C; sets thermal derating limits for PCB layout and heatsinking in compact enclosures.

Pinout & Package

2SA1434-TB-E is housed in a TO-92 compatible molded plastic package (SANYO CP designation), with standardized lead spacing and outline per JEDEC TO-92. The package supports manual and automated through-hole assembly and provides adequate thermal conduction for low-power linear operation.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to circuit common or negative rail; polarity defines PNP operation and dictates bias network topology.
2 (Collector)	Current source terminal	Drives load toward positive supply; requires appropriate pull-up or active load for proper amplification or switching action.
3 (Base)	Control input terminal	Accepts forward-biased current to enable conduction; base resistor sizing must accommodate hFE min/max for stable turn-on/turn-off behavior.

Key Features

Feature	Design Value
FBET process technology	Enables tight hFE distribution and improved β stability across temperature and production lots, reducing calibration overhead in production amplifiers.
High hFE (500–1200)	Reduces required base drive current by >2× vs. standard general-purpose PNP transistors, easing microcontroller GPIO or op-amp output loading.
Low V_CE(sat) (≤ −0.5 V)	Minimizes voltage drop and power loss in series-muting configurations, preserving signal amplitude integrity in analog audio signal paths.
High V_EBO (≥ −15 V)	Permits direct coupling or higher-voltage biasing without external clamping, simplifying multi-stage amplifier interstage design.

Applications

Audio Pre-Amplifier Stage	Analog Muting Circuit
Use Scenario: Low-noise voltage amplification of microphone or line-level signals prior to ADC or power stage. IC Role / Device Role / Timing Role: PNP small-signal amplifier configured in common-emitter topology with emitter degeneration. Use Value: High hFE ensures sufficient gain with minimal base current draw, while low V_CE(sat) preserves dynamic range during signal peaks.	Use Scenario: Signal path interruption in consumer audio equipment using transistor as series shunt switch. IC Role / Device Role / Timing Role: Active low-side muting element controlled by logic-level enable signal. Use Value: Fast turn-on/off due to high β and low saturation voltage enables clean mute/unmute transitions without pop/click artifacts.
DC-Coupled Level Shifter	Low-Frequency Driver Stage
Use Scenario: Bidirectional level translation between ±12 V and 0–5 V domains in industrial sensor interfaces. IC Role / Device Role / Timing Role: PNP emitter-follower buffer with adjustable bias point for offset compensation. Use Value: High V_EBO supports reverse-biased operation during negative swing, preventing latch-up or distortion.	Use Scenario: Driving relay coils or LED arrays in embedded control systems requiring moderate current (<100 mA). IC Role / Device Role / Timing Role: Switching transistor in common-emitter configuration with base current limiting. Use Value: Guaranteed hFE ≥ 500 ensures full saturation with <1 mA base drive, reducing MCU GPIO loading and enabling compact driver design.

Audio Pre-Amplifier Stage

Analog Muting Circuit

Use Scenario: Low-noise voltage amplification of microphone or line-level signals prior to ADC or power stage.

IC Role / Device Role / Timing Role: PNP small-signal amplifier configured in common-emitter topology with emitter degeneration.

Use Value: High hFE ensures sufficient gain with minimal base current draw, while low V_CE(sat) preserves dynamic range during signal peaks.

Use Scenario: Signal path interruption in consumer audio equipment using transistor as series shunt switch.

IC Role / Device Role / Timing Role: Active low-side muting element controlled by logic-level enable signal.

Use Value: Fast turn-on/off due to high β and low saturation voltage enables clean mute/unmute transitions without pop/click artifacts.

DC-Coupled Level Shifter

Low-Frequency Driver Stage

Use Scenario: Bidirectional level translation between ±12 V and 0–5 V domains in industrial sensor interfaces.

IC Role / Device Role / Timing Role: PNP emitter-follower buffer with adjustable bias point for offset compensation.

Use Value: High V_EBO supports reverse-biased operation during negative swing, preventing latch-up or distortion.

Use Scenario: Driving relay coils or LED arrays in embedded control systems requiring moderate current (<100 mA).

IC Role / Device Role / Timing Role: Switching transistor in common-emitter configuration with base current limiting.

Use Value: Guaranteed hFE ≥ 500 ensures full saturation with <1 mA base drive, reducing MCU GPIO loading and enabling compact driver design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1037AK-TL-E	Higher f_T (≥ 180 MHz), lower V_CEO (−50 V same), hFE = 200–400 (lower gain range)	Better suited for higher-speed switching; less ideal for high-gain, low-noise preamp where 2SA1434-TB-E's hFE > 500 is critical	Select when speed outweighs gain; verify base drive compatibility due to lower β.
BC557B	Same TO-92 package, V_CEO = −45 V, hFE = 200–450, V_CE(sat) ≈ −0.65 V (higher)	Widely available but lower gain and higher saturation voltage reduce efficiency in low-current muting or high-gain stages	Acceptable for cost-sensitive, non-critical amplification; avoid where V_CE(sat) < −0.5 V or hFE > 500 is required.

Compared with 2SA1434-TB-E, the 2SA1037AK-TL-E trades gain for bandwidth, while the BC557B offers broader availability at the expense of saturation voltage and current gain-making 2SA1434-TB-E optimal for precision low-frequency amplification where both low V_CE(sat) and high hFE are simultaneously required.

Availability

2SA1434-TB-E is available at Aetrix Electronics and suitable for audio preamplifiers, analog muting circuits, and low-frequency driver stages requiring stable component supply, consistent parametric performance, and long-term obsolescence resilience.

Supply support for 2SA1434-TB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog and discrete devices before its semiconductor business was acquired by ON Semiconductor in 2011.

The 2SA1434 belongs to SANYO's legacy CP-series general-purpose PNP transistor family, engineered for reliability and consistency in consumer audio, industrial control, and instrumentation signal conditioning applications.

FAQ

What is the maximum collector-emitter voltage rating for 2SA1434-TB-E?

The absolute maximum V_CEO for 2SA1434-TB-E is −50 V with the base open. This rating defines the upper limit for safe DC or peak AC voltage applied between collector and emitter terminals. Exceeding this value risks avalanche breakdown or permanent damage. Derating is required above T_A = 25°C per the datasheet's thermal curves. The 2SA1434-TB-E must be operated within this boundary in all amplifier, switching, and muting configurations.

Does 2SA1434-TB-E have a guaranteed minimum hFE at low collector currents?

Yes, 2SA1434-TB-E guarantees hFE ≥ 500 at I_C = −10 mA and V_CE = −5 V. This minimum is maintained across the full rated junction temperature range. At lower currents (e.g., I_C = −1 mA), hFE remains high but is not formally bounded in the datasheet. Designers should use the 500–1200 range for worst-case base resistor calculations in the 2SA1434-TB-E's intended low-frequency amplifier applications.

What is the marking code printed on the 2SA1434-TB-E package?

The 2SA1434-TB-E is marked with "FL" on the top surface of its TO-92 package. This two-character laser or ink mark identifies the specific device variant and manufacturing lot. It is distinct from other SANYO PNP transistors like the 2SA1015 (marked "K") or 2SA1235 (marked "Q"). The "FL" marking is confirmed in the official SANYO datasheet No. 1853-3/3 and corresponds exclusively to the 2SA1434-TB-E ordering variant.

Can 2SA1434-TB-E be used in surface-mount designs?

No, 2SA1434-TB-E is a through-hole device in a TO-92 (CP) package and is not suitable for standard SMT reflow or wave soldering. Its leadform and body geometry require axial or radial through-hole mounting. For surface-mount equivalents, consider SOT-23 PNP transistors such as the NSS12201LT1G-but note these differ in hFE range, V_CEO, and thermal performance. The 2SA1434-TB-E must be placed and soldered using through-hole processes.

What is the thermal resistance from junction to ambient for 2SA1434-TB-E?

The datasheet specifies a maximum junction-to-ambient thermal resistance (R_θJA) of 625°C/W for the 2SA1434-TB-E in free-air conditions. This value assumes no PCB copper pour or heatsinking. With 1-inch² of 1-oz copper connected to the collector lead, R_θJA improves significantly-typically to ~200°C/W. Thermal design must ensure the junction temperature stays below +125°C under worst-case power dissipation (200 mW max at T_A = 25°C). The 2SA1434-TB-E's thermal behavior is fully characterized in SANYO's Application Note PS No. 1853-3/3.

2SA1434-TB-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SA1434-TB-E FAQ

1.How can I place an order for 2SA1434-TB-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1434-TB-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1434-TB-E reliable?

The price and inventory of 2SA1434-TB-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1434-TB-E is usually 5 days.

3.What payment methods are accepted for 2SA1434-TB-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1434-TB-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1434-TB-E?

2SA1434-TB-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1434-TB-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1434-TB-E?

For technical support, including 2SA1434-TB-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1434-TB-E requirements.

6.How does Aetrix verify that 2SA1434-TB-E is sourced from the original manufacturer or authorized distributors?

All 2SA1434-TB-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1434-TB-E meets industry standards.

7.What is the process for return or replacement of 2SA1434-TB-E?

All 2SA1434-TB-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1434-TB-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1434-TB-E part is unused and in its original packaging.

Return procedure for 2SA1434-TB-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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