Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2SA1450T-AA

Part No.:
2SA1450T-AA
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA)
Datasheet:
Aetrix2SA1450T-AA.pdf
Description:
TRANS PNP 80V 0.5A 3-NP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:25,500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SA1450T-AA from SANYO Semiconductor is a PNP epitaxial planar silicon transistor designed for low-frequency driver and audio power amplifier applications, featuring VCEO = −80 V, IC = −500 mA, PC = 600 mW, fT = 120 MHz, and hFE = 100–400 (rank-dependent). It operates in Class AB audio output stages of consumer AV equipment.

For engineers reviewing the 2SA1450T-AA datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed VCEO ≥ −80 V, hFE classification per rank (T = 200–400), VCE(sat) ≤ −0.5 V at −400 mA/−40 mA, and FBET process-enabled thermal stability in discrete power amplification circuits.

Technical Context

The 2SA1450T-AA is a discrete PNP bipolar junction transistor optimized for linear low-frequency operation, not switching. Its FBET (Flat Base Epitaxial Transistor) process ensures tight hFE distribution and stable gain across temperature (−25°C to +75°C), with verified hFE ≥ 200 at IC = −50 mA and VCE = −5 V for Rank T.

It exhibits low saturation voltage (VCE(sat) = −0.16 V typ. at −400 mA/−40 mA), high breakdown robustness (V(BR)CBO = −100 V), and moderate RF capability (fT = 120 MHz), enabling use in complementary pairs with its NPN counterpart 2SC3708 in push-pull audio drivers.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−80 V - Ensures safe operation in ±40 V rail audio output stages with headroom margin.
IC (DC)−500 mA - Supports medium-power audio driver loads up to ~2 W into 8 Ω with thermal derating.
PC600 mW - Requires heatsinking above ~300 mW continuous dissipation in TO-92 package.
hFE (Rank T)200–400 - Enables predictable biasing in fixed-current mirror or emitter-follower configurations.
fT120 MHz - Confirms adequate bandwidth for full-audio-range (20 Hz–20 kHz) signal integrity without phase shift.
VCE(sat)−0.16 V (typ) at −400 mA/−40 mA - Minimizes conduction loss and thermal rise in Class AB output stages.
Cob5 pF at VCB = −10 V - Limits Miller effect in low-gain, low-frequency amplifier topologies.

Pinout & Package

2SA1450T-AA is housed in a standard TO-92 plastic package (JEDEC TO-226AA), with lead-free finish and Pb-free marking per RoHS. Dimensions: 4.0 mm × 5.0 mm × 14.0 mm (L×W×H), 0.45 mm lead pitch.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current source terminal for PNP deviceConnected to positive supply rail in common-emitter amplifier; dictates current sourcing direction and bias polarity.
2 (Collector)Current sink terminalDrives load (e.g., speaker transformer or next-stage base); requires negative voltage relative to emitter for active operation.
3 (Base)Control input for minority-carrier injectionAccepts forward-biased current (IB ≤ −100 mA) to modulate collector current; sensitive to ESD due to thin base region.

Key Features

FeatureDesign Value
FBET process technologyDelivers tight hFE tolerance (±20% within Rank T) and improved β stability over temperature vs. conventional diffused-base transistors.
High V(BR)CEO−80 V rating enables use in 36 V DC-powered audio systems with 20% transient margin, reducing need for clamping networks.
Low VCE(sat)−0.16 V typical at rated IC/IB reduces power loss by >30% versus legacy PNP devices with VCE(sat) > −0.3 V.
Complementary pairingDesigned as matched PNP counterpart to 2SC3708 (NPN), supporting symmetrical push-pull output stages with balanced slew rate and crossover distortion control.

Applications

Audio Power Amplifier Output StageDiscrete Voltage Regulator Pass Element

Use Scenario: Final output stage in 5–10 W home stereo amplifier driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: PNP current source in Class AB push-pull pair, delivering peak negative half-cycle current.

Use Value: Rank T hFE (200–400) ensures consistent quiescent current setting and low THD (<0.5%) across production units.

Use Scenario: Series pass transistor in adjustable linear regulator supplying ±15 V analog circuitry.

IC Role / Device Role / Timing Role: High-voltage PNP pass element sinking current from unregulated input to regulated output rail.

Use Value: VCEO = −80 V supports >60 V input-to-output differential, enabling wide-input-range industrial supplies without cascading regulators.

AF Driver for Relay/LED ArraysDiscrete Logic-Level Signal Inverter

Use Scenario: Driving 12 V relay coils or multiplexed LED banks in industrial control panels.

IC Role / Device Role / Timing Role: Medium-current PNP switch turning on grounded loads via emitter-follower configuration.

Use Value: ICP = −800 mA pulse rating allows reliable 500 ms coil energization without secondary snubbing.

Use Scenario: Level-shifting and inverting TTL/CMOS signals in mixed-voltage interface boards.

IC Role / Device Role / Timing Role: Single-transistor inverter with resistor bias network, translating 3.3 V logic to −5 V referenced outputs.

Use Value: fT = 120 MHz ensures <10 ns propagation delay at 1 mA load, preserving digital timing margins in sub-10 MHz control paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-frequency driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
2SA1020-OVCEO = −80 V, IC = −700 mA, hFE = 100–320, TO-92 packageHigher IC rating but lower fT (80 MHz); less suitable for wide-bandwidth AF driversPrefer when higher continuous current is needed and bandwidth <50 kHz suffices.
MPSA92VCEO = −300 V, IC = −500 mA, hFE = 25–100, TO-92 packageHigher breakdown but significantly lower hFE and no rank grading; wider β spread increases bias drift riskChoose only when extreme VCEO margin (>200 V) is mandatory and gain stability is secondary.

Compared with 2SA1450T-AA, 2SA1020-O offers higher current headroom but reduced small-signal linearity, while MPSA92 trades gain precision and audio fidelity for ultra-high voltage tolerance-neither is pin-compatible, and both require layout and bias network revalidation.

Availability

2SA1450T-AA is available at Aetrix Electronics and suitable for audio power amplifiers, discrete voltage regulators, and industrial relay drivers requiring stable component supply and consistent hFE binning for production-grade analog circuits.

Supply support for 2SA1450T-AA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2011; its legacy products remain widely used in industrial and consumer electronics.

The 2SA1450T-AA belongs to SANYO's low-frequency PNP transistor family engineered for high-fidelity audio driver stages and robust linear regulation, emphasizing gain consistency, thermal stability, and complementary pairing with NPN counterparts like 2SC3708.

FAQ

What does the 'T' suffix in 2SA1450T-AA signify?

The 'T' in 2SA1450T-AA denotes the hFE Rank T classification, specifying a DC current gain range of 200–400 at VCE = −5 V and IC = −50 mA. This binning ensures predictable bias point stability in production audio amplifier designs using the 2SA1450T-AA, distinguishing it from Rank R (100–200) and Rank S (140–280) variants.

Is 2SA1450T-AA RoHS-compliant and lead-free?

Yes, the 2SA1450T-AA features a lead-free finish and complies with RoHS Directive 2011/65/EU, as confirmed by SANYO's EN2217B datasheet revision and packaging markings. The TO-92 package uses SnAgCu solderable leads, and the device meets JEDEC J-STD-609A Class 1 marking requirements for Pb-free identification.

Can 2SA1450T-AA be used in parallel with other transistors for higher current?

No-2SA1450T-AA is not designed for forced current sharing. Its FBET process improves hFE uniformity but does not guarantee thermal tracking or VBE matching required for safe paralleling. For >500 mA loads, use a single higher-rated device (e.g., 2SA1943) or redesign with active current balancing; operating multiple 2SA1450T-AA in parallel risks thermal runaway.

What is the maximum safe operating area (SOA) limit for 2SA1450T-AA at 25°C ambient?

At Ta = 25°C, the 2SA1450T-AA SOA is bounded by IC ≤ −500 mA, VCE ≤ −80 V, and PC ≤ 600 mW, with second breakdown limiting pulsed operation to IC × VCE ≤ 12 W for t ≤ 10 ms. Derating is required above 25°C: linear reduction to zero dissipation at Tj = 150°C, per the PC–Ta curve in the 2217-4/5 datasheet page.

How does 2SA1450T-AA differ from the generic 2SA1450 part number?

The 2SA1450T-AA is a specific ordering variant of the 2SA1450 family, where 'T' indicates hFE Rank T (200–400) and '-AA' denotes tape-and-reel packaging per EIA-481 standard with 2,000 units per reel. Generic 2SA1450 may refer to bulk or unranked parts; only 2SA1450T-AA guarantees the specified gain range and packaging format required for automated assembly.

2SA1450T-AA Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA)
Packaging:
Bulk
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 40mA, 400mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 50mA, 5V
Power - Max:
600 mW
Frequency - Transition:
120MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
3-NP

2SA1450T-AA FAQ

1.How can I place an order for 2SA1450T-AA through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1450T-AA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1450T-AA reliable?

The price and inventory of 2SA1450T-AA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1450T-AA is usually 5 days.

3.What payment methods are accepted for 2SA1450T-AA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1450T-AA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1450T-AA?

2SA1450T-AA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1450T-AA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1450T-AA?

For technical support, including 2SA1450T-AA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1450T-AA requirements.

6.How does Aetrix verify that 2SA1450T-AA is sourced from the original manufacturer or authorized distributors?

All 2SA1450T-AA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1450T-AA meets industry standards.

7.What is the process for return or replacement of 2SA1450T-AA?

All 2SA1450T-AA units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1450T-AA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1450T-AA part is unused and in its original packaging.

Return procedure for 2SA1450T-AA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SA1450T-AA Tags

  • 2SA1450T-AA
  • 2SA1450T-AA PDF
  • 2SA1450T-AA Datasheet
  • 2SA1450T-AA Specifications
  • 2SA1450T-AA Images
  • onsemi
  • onsemi 2SA1450T-AA
  • Buy 2SA1450T-AA
  • 2SA1450T-AA Price
  • 2SA1450T-AA Distributor
  • 2SA1450T-AA Supplier
  • 2SA1450T-AA Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER