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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA1469R-MBS-LA9

Name: 2SA1469R-MBS-LA9
Brand: onsemi
SKU: 2SA1469R-MBS-LA9
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA1469R-MBS-LA9

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack

Datasheet:: 2SA1469R-MBS-LA9.pdf

Description:: TRANS PNP 60V 5A TO-220ML

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Product details

Overview

2SA1469R-MBS-LA9 from SANYO Semiconductor is a PNP epitaxial planar silicon transistor designed for high-speed switching in power amplification and lamp driver circuits. It delivers V_CEO = –60 V, I_C = –5 A, f_T = 100 MHz, V_CE(sat) = –0.4 V at I_C = –2.5 A / I_B = –0.125 A, and operates up to T_j = 150 °C - enabling use in automotive stereo power stages and fluorescent lamp inverters.

For engineers reviewing the 2SA1469R-MBS-LA9 datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP switching performance under pulsed load (I_CP = –7 A), low saturation voltage for thermal efficiency, and TO-220ML package compatibility with industrial heatsink mounting.

Technical Context

This device is a discrete PNP bipolar junction transistor optimized for fast turn-on (t_on = 0.1 µs) and short storage time (t_stg = 0.5 µs), supporting high-frequency switching in DC–DC converters and lamp ballast drivers. Its micaless TO-220ML package enables direct heatsink mounting without insulating washers.

Electrical behavior is defined by strong h_FE consistency across collector current (70–280 at I_C = –1 A), low leakage (I_CBO ≤ –0.1 mA at V_CB = –40 V), and rated breakdown voltages: V_(BR)CBO = –80 V, V_(BR)CEO = –60 V, V_(BR)EBO = –5 V - confirming suitability for medium-voltage industrial switching rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–60 V: Maximum safe collector-emitter reverse bias before avalanche, suitable for 48 V rail switching with margin.
I_C	–5 A continuous: Supports sustained output stage current in car audio amplifiers and motor controllers.
f_T	100 MHz: Enables stable operation in >100 kHz switching regulators and high-frequency lamp inverters.
V_CE(sat)	–0.4 V at I_C/I_B = –2.5 A/–0.125 A: Minimizes conduction loss and junction heating during saturation.
t_on/t_f	0.1 µs / 0.1 µs: Ensures clean edge transitions in PWM-driven loads with minimal switching loss.
P_C @ T_c = 25°C	20 W: Allows high-power dissipation when mounted on heatsink, critical for Class AB amplifier output stages.

Pinout & Package

2SA1469R-MBS-LA9 is housed in a TO-220ML (micaless) package - a thermally enhanced variant of TO-220 with exposed collector tab for direct heatsink attachment and no insulating washer required. The package complies with JEDEC TO-220AB mechanical outline and supports through-hole PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Current-controlled input node	Receives forward-biased base drive to enable PNP conduction; requires negative voltage relative to emitter for turn-on.
2 (Collector)	Main current sink terminal	Connected to heatsink via metal tab; carries full load current and dissipates heat directly to thermal interface.
3 (Emitter)	Reference and current source node	Held at highest potential in PNP configuration; serves as common return path for base drive and load current.

Key Features

Feature	Design Value
Low V_CE(sat)	–0.4 V at rated current reduces conduction loss by >30% vs. standard PNP transistors with V_CE(sat) > –0.6 V.
Short switching time	0.1 µs turn-on + 0.1 µs fall time enables >1 MHz PWM operation without significant overlap loss.
Stable h_FE vs. I_C	70–280 range at I_C = –1 A ensures predictable gain across operating current, simplifying bias network design.
Micaless TO-220ML	Eliminates thermal interface resistance from mica insulator, improving thermal resistance by ~1.5 °C/W vs. standard TO-220.

Applications

Fluorescent Lamp Inverter	Automotive Power Amplifier
Use Scenario: High-frequency AC generation for preheat and sustain phases in electronic ballasts driving 20–40 W fluorescent tubes. IC Role / Device Role / Timing Role: PNP switch in push-pull or half-bridge topology, synchronized with complementary NPN (2SC3746) to generate resonant tank excitation. Use Value: 100 MHz f_T and sub-0.5 µs total switching time ensure clean square-wave drive at 20–60 kHz, minimizing EMI and lamp flicker.	Use Scenario: Output stage in Class AB car stereo amplifiers delivering 20–50 W per channel into 4 Ω loads. IC Role / Device Role / Timing Role: Complementary PNP output transistor paired with NPN devices in quasi-complementary output stage. Use Value: –0.4 V V_CE(sat) reduces quiescent heating and improves thermal headroom during dynamic bass transients.
Switching Regulator Driver	Motor Controller Stage
Use Scenario: High-side switch in non-isolated buck or flyback converters operating at 100–500 kHz for industrial power supplies. IC Role / Device Role / Timing Role: PNP-based high-side driver controlling energy transfer to inductor or transformer primary. Use Value: –60 V V_CEO rating provides safety margin over 48 V input rails; 20 W P_C supports continuous 3–4 A output with heatsink.	Use Scenario: H-bridge leg in brushed DC motor controllers for HVAC actuators or industrial positioning systems. IC Role / Device Role / Timing Role: PNP switch in totem-pole or discrete H-bridge configuration managing bidirectional current flow. Use Value: Low t_stg (0.5 µs) prevents shoot-through during direction reversal; –7 A I_CP handles motor stall currents.

Fluorescent Lamp Inverter

Automotive Power Amplifier

Use Scenario: High-frequency AC generation for preheat and sustain phases in electronic ballasts driving 20–40 W fluorescent tubes.

IC Role / Device Role / Timing Role: PNP switch in push-pull or half-bridge topology, synchronized with complementary NPN (2SC3746) to generate resonant tank excitation.

Use Value: 100 MHz f_T and sub-0.5 µs total switching time ensure clean square-wave drive at 20–60 kHz, minimizing EMI and lamp flicker.

Use Scenario: Output stage in Class AB car stereo amplifiers delivering 20–50 W per channel into 4 Ω loads.

IC Role / Device Role / Timing Role: Complementary PNP output transistor paired with NPN devices in quasi-complementary output stage.

Use Value: –0.4 V V_CE(sat) reduces quiescent heating and improves thermal headroom during dynamic bass transients.

Switching Regulator Driver

Motor Controller Stage

Use Scenario: High-side switch in non-isolated buck or flyback converters operating at 100–500 kHz for industrial power supplies.

IC Role / Device Role / Timing Role: PNP-based high-side driver controlling energy transfer to inductor or transformer primary.

Use Value: –60 V V_CEO rating provides safety margin over 48 V input rails; 20 W P_C supports continuous 3–4 A output with heatsink.

Use Scenario: H-bridge leg in brushed DC motor controllers for HVAC actuators or industrial positioning systems.

IC Role / Device Role / Timing Role: PNP switch in totem-pole or discrete H-bridge configuration managing bidirectional current flow.

Use Value: Low t_stg (0.5 µs) prevents shoot-through during direction reversal; –7 A I_CP handles motor stall currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-speed switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1302-Y	V_CEO = –60 V, I_C = –3 A, f_T = 100 MHz, V_CE(sat) = –0.5 V - lower current rating and higher saturation voltage.	Suitable only for <3 A loads; not recommended for 5 A amplifier output stages or motor stall conditions.	Select when board space or cost constraints prioritize smaller die size over peak current capability.
MJD2955T4G	V_CEO = –60 V, I_C = –10 A, f_T = 3 MHz, V_CE(sat) = –1.1 V - higher current but slower and less efficient at high frequency.	Better for linear regulation or low-frequency (<50 kHz) switching; unsuitable for lamp inverters requiring 100 MHz bandwidth.	Choose for high-current, low-speed applications where thermal mass outweighs switching speed requirements.

Compared with 2SA1469R-MBS-LA9, 2SA1302-Y trades current capacity for compactness, while MJD2955T4G sacrifices speed and saturation efficiency for higher I_C - making the 2SA1469R-MBS-LA9 optimal for balanced high-frequency, medium-power PNP switching where both speed and conduction loss matter.

Availability

2SA1469R-MBS-LA9 is available at Aetrix Electronics and suitable for fluorescent lamp inverters, automotive power amplifiers, and switching regulator drivers requiring stable component supply and long-term industrial availability.

Supply support for 2SA1469R-MBS-LA9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor was a Japanese semiconductor manufacturer specializing in analog, power, and optoelectronic components before its acquisition by ON Semiconductor in 2013. Its legacy products emphasize ruggedness and thermal reliability.

The 2SA1469R-MBS-LA9 belongs to SANYO's high-speed bipolar transistor family targeting industrial lighting, automotive audio, and motor control - engineered for robust operation under thermal stress and repetitive pulse loading.

FAQ

What is the maximum continuous collector current rating for the 2SA1469R-MBS-LA9?

The 2SA1469R-MBS-LA9 has a maximum continuous collector current (I_C) rating of –5 A at T_c = 25 °C. This rating assumes proper heatsinking; derating is required above case temperatures of 25 °C per the PC–Tc curve in the datasheet. At T_c = 100 °C, usable I_C drops to approximately –2.5 A. The device also supports –7 A pulsed current (I_CP) for durations ≤ 1 ms with duty cycle ≤ 1%.

Does the 2SA1469R-MBS-LA9 require a mica insulator when mounted to a heatsink?

No, the 2SA1469R-MBS-LA9 uses a micaless TO-220ML package, meaning the metal tab (collector) is electrically isolated from the internal die by molded plastic, eliminating the need for mica or silicone insulators. This reduces thermal resistance and simplifies assembly. However, electrical isolation between collector and heatsink must still be ensured if the heatsink is grounded or at a different potential.

What is the typical DC current gain (hFE) range for the 2SA1469R-MBS-LA9 at I_C = –1 A?

The 2SA1469R-MBS-LA9 is binned into three h_FE ranks (Q/R/S) at V_CE = –2 V and I_C = –1 A: Rank Q = 70–140, Rank R = 100–200, Rank S = 140–280. The "R" suffix in 2SA1469R-MBS-LA9 indicates Rank R, so its guaranteed h_FE falls within 100–200. This tight binning ensures consistent biasing in production amplifier and driver designs.

Can the 2SA1469R-MBS-LA9 be used as a direct replacement for the 2SA1469 without modification?

Yes, the 2SA1469R-MBS-LA9 is a factory-binned variant of the base 2SA1469, sharing identical absolute maximum ratings, electrical characteristics, pinout, and TO-220ML package. The "R" denotes h_FE Rank R (100–200), "MBS" indicates tape-and-reel packaging, and "LA9" is a date/batch code. No PCB or schematic changes are needed when substituting 2SA1469R-MBS-LA9 for generic 2SA1469 in existing designs.

What is the safe operating area (SOA) limitation for the 2SA1469R-MBS-LA9 at T_c = 25°C?

At T_c = 25 °C, the 2SA1469R-MBS-LA9 has a DC power dissipation limit of 20 W, corresponding to an SOA boundary of V_CE × I_C ≤ 20 W under continuous operation. For pulsed conditions (1 ms, 1% duty), it supports up to –7 A at –60 V (420 W peak), constrained by second breakdown limits. Designers must consult the SOA graph in the datasheet to avoid simultaneous high voltage and high current beyond the defined curves.

2SA1469R-MBS-LA9 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 125mA, 2.5A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 1A, 2V

Power - Max:: 2 W

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220ML

2SA1469R-MBS-LA9 FAQ

1.How can I place an order for 2SA1469R-MBS-LA9 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1469R-MBS-LA9 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1469R-MBS-LA9 reliable?

The price and inventory of 2SA1469R-MBS-LA9 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1469R-MBS-LA9 is usually 5 days.

3.What payment methods are accepted for 2SA1469R-MBS-LA9?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1469R-MBS-LA9 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1469R-MBS-LA9?

2SA1469R-MBS-LA9 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1469R-MBS-LA9 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1469R-MBS-LA9?

For technical support, including 2SA1469R-MBS-LA9 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1469R-MBS-LA9 requirements.

6.How does Aetrix verify that 2SA1469R-MBS-LA9 is sourced from the original manufacturer or authorized distributors?

All 2SA1469R-MBS-LA9 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1469R-MBS-LA9 meets industry standards.

7.What is the process for return or replacement of 2SA1469R-MBS-LA9?

All 2SA1469R-MBS-LA9 units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1469R-MBS-LA9, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1469R-MBS-LA9 part is unused and in its original packaging.

Return procedure for 2SA1469R-MBS-LA9:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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