onsemi 2SA1552S-TL-E

Overview

2SA1552S-TL-E from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-voltage, medium-current applications. It features a DC current gain (h_FE) of 120–270 at I_C = 2 mA, V_CE = 2 V; maximum collector-emitter voltage (V_CEO) of 50 V; continuous collector current (I_C) rating of 150 mA; and operates up to 100 MHz transition frequency (f_T). It is commonly used in audio preamplifier stages and signal conditioning circuits within consumer electronics.

For engineers reviewing the 2SA1552S-TL-E datasheet, pinout, applications, or equivalent options, key selection considerations include its complementary pairing with 2SC4081S-TL-E, guaranteed h_FE binning per JEDEC TO-236AB (SOT-23) package, and suitability for low-noise small-signal amplification where V_CE(sat) ≤ 0.3 V at I_C/I_B = 50 mA/5 mA is required.

Technical Context

The 2SA1552S-TL-E is a silicon PNP BJT fabricated using onsemi's epitaxial planar process, optimized for stable DC current gain across temperature and bias conditions. Its base-emitter junction exhibits typical V_BE(on) of 0.75 V at I_C = 10 mA, and it supports linear operation with output capacitance (C_obo) of 4 pF at V_CB = 10 V.

This device belongs to a matched complementary pair series with defined gain correlation between NPN and PNP variants. It is not rated for avalanche operation or built-in ESD protection, and requires external base current limiting in switching configurations to ensure safe operating area (SOA) compliance at V_CE > 10 V.

Key Specifications

Pinout & Package

2SA1552S-TL-E is housed in a JEDEC-standard TO-236AB (SOT-23) plastic surface-mount package with three terminals. The package measures 2.9 mm × 1.3 mm × 1.0 mm and is lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with 2SA1552S-TL-E, 2SA1037AK-TL-E trades bandwidth for higher DC gain and lacks guaranteed binning, while MMBT4403 offers generic functionality without production-grade matching or f_T specification-making the 2SA1552S-TL-E optimal for designs requiring verified gain correlation and RF-capable performance in compact layouts.

Availability

2SA1552S-TL-E is available at Aetrix Electronics and suitable for audio signal conditioning, logic-level translation, and LED driver circuits requiring stable component supply, consistent h_FE binning, and RoHS-compliant SOT-23 packaging.

Supply support for 2SA1552S-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SA1552S-TL-E belongs to onsemi's general-purpose small-signal transistor product line, engineered for reliable amplification and switching in space-constrained, cost-sensitive consumer and industrial electronics.

FAQ

What is the maximum operating temperature for the 2SA1552S-TL-E?

The 2SA1552S-TL-E has a junction temperature rating of –55°C to +150°C. Its thermal resistance θ_JA is 357°C/W in standard FR-4 PCB layout with minimal copper, meaning sustained power dissipation must remain below ~120 mW at 70°C ambient to avoid exceeding T_J(max). Derating curves in the official datasheet define safe limits across ambient conditions. Always verify thermal margin using actual board layout and airflow in the final 2SA1552S-TL-E application.

Is the 2SA1552S-TL-E pin-compatible with the 2SC4081S-TL-E?

Yes-the 2SA1552S-TL-E and 2SC4081S-TL-E share identical TO-236AB (SOT-23) package dimensions and pinout order (Emitter-Base-Collector), enabling direct physical placement as complementary pairs. Their electrical parameters-including h_FE binning ranges and V_CEO/V_CBO ratings-are specifically correlated per onsemi's design documentation, making them suitable for matched differential amplifiers and push-pull output stages without layout modification. This pairing is explicitly validated in the 2SA1552S-TL-E datasheet.

Does the 2SA1552S-TL-E have built-in ESD protection?

No, the 2SA1552S-TL-E does not integrate on-chip ESD protection diodes. It is rated for human-body model (HBM) ESD sensitivity of ±2 kV per JESD22-A114, meaning external protection-such as series resistors or TVS diodes-is required in handling and circuit design if exposed to static-prone environments. This absence is consistent across onsemi's small-signal BJT portfolio and confirmed in the device's reliability report. Always observe proper ESD protocols during 2SA1552S-TL-E assembly and testing.

What is the typical noise figure of the 2SA1552S-TL-E at 1 kHz?

The 2SA1552S-TL-E exhibits a typical noise figure of 9 dB at I_C = 1 mA, V_CE = 5 V, and f = 1 kHz, as measured per IEC 60268-15 standards. This value reflects its suitability for low-noise preamplifier stages where signal integrity is critical. Noise performance degrades above 10 kHz due to inherent transistor physics, so optimal 2SA1552S-TL-E usage in audio paths maintains bias near the specified test condition and avoids excessive source impedance.

Can the 2SA1552S-TL-E be used in avalanche mode?

No-the 2SA1552S-TL-E is not characterized or rated for avalanche operation. Its breakdown specifications cover only V_CEO, V_CBO, and V_EBO under controlled DC conditions; no energy-rated avalanche ruggedness data (e.g., E_AS) is provided in the datasheet or reliability reports. Using the 2SA1552S-TL-E beyond V_CEO risks irreversible degradation. For circuits requiring controlled breakdown, select purpose-designed avalanche-rated transistors such as onsemi's NSS12201LT1G.